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Method for fabricating photo detector

  • US 8,722,448 B2
  • Filed: 10/30/2013
  • Issued: 05/13/2014
  • Est. Priority Date: 07/27/2007
  • Status: Active Grant
First Claim
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1. A method for fabricating a photo detector, comprising:

  • providing a substrate having a transistor region and a photosensitive region;

    forming a first patterned semiconductor layer having a first crystal state on the transistor region of the substrate, wherein the first patterned semiconductor layer comprises a first doping region and a second doping region;

    covering a dielectric layer on the substrate and the first patterned semiconductor layer of the transistor region;

    forming a patterned conductive layer on the dielectric layer of the transistor region and the dielectric layer of the photosensitive region;

    covering an interlayer dielectric layer on the dielectric layer and the patterned conductive layer, wherein the interlayer dielectric layer comprises at least two openings to expose a portion of the first doping region and the second doping region of the first patterned semiconductor layer;

    forming a second patterned semiconductor layer having a second crystal state on the photosensitive region;

    forming two first electrodes on the interlayer dielectric layer and electrically connecting the first electrodes to the first patterned semiconductor layer; and

    forming two second electrodes on a portion of the second patterned semiconductor layer.

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