Optical systems fabricated by printing-based assembly

• US 8,722,458 B2
• Filed: 05/04/2011
• Issued: 05/13/2014
• Est. Priority Date: 01/17/2007
• Status: Active Grant

• Current Assignee: Board of Trustees of The University of Illinois, X Display Company Technology Limited (Sensinnovat BVBA)
• Original Assignee: Board of Trustees of The University of Illinois, Semprius, Inc.
• Inventors: Rogers, John, Nuzzo, Ralph, Meitl, Matthew, Menard, Etienne, Baca, Alfred J., Motala, Michael, Ahn, Jong-Hyun, Park, Sang-Il, Yu, Chang-Jae, Ko, Heung Cho, Stoykovich, Mark, Yoon, Jongseung
• Primary Examiner(s): YUSHIN, NIKOLAY K
• Application Number:
  US13/100,774
• Publication Number:
  US 20110266561A1
• Time in Patent Office: 1,105 Days
• Field of Search: 257/88, 257/79, 257/414, 257/416, 257/431, 257/444, 257/E21.502, 257/E31.124, 257/E33.062, 438/21, 438/22, 438/67, 438/107, 438/127, 438/98
• US Class Current: 438/107
• CPC Class Codes: B81C 2201/0185 Printing, e.g. microcontact printing
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 21/00 Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/75753 Means for optical alignment, e.g. sensors
• CPC Class Codes: H01L 2224/75901 using a computer, e.g. fully- or semi-automatic bonding
• CPC Class Codes: H01L 2224/7598 specially adapted for batch processes
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/83005 being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/72 Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 24/75 Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 25/042 the devices being arranged next to each other solar cells H01L31/042
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 27/1214 : comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/124 : with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1285 : using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 : using liquid deposition, e.g. printing
• CPC Class Codes: H01L 27/14627 : Microlenses
• CPC Class Codes: H01L 27/14636 : Interconnect structures
• CPC Class Codes: H01L 27/14643 : Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 29/78603 : characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78681 : having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2933/005 : relating to encapsulations
• CPC Class Codes: H01L 2933/0058 : relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0066 : relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 2933/0091 : Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 31/02005 : for device characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/02008 : for solar cells or solar cell modules
• CPC Class Codes: H01L 31/02168 : the coatings being antireflective or having enhancing optical properties for the solar cells
• CPC Class Codes: H01L 31/02325 : the optical elements not being integrated nor being directly associated with the device
• CPC Class Codes: H01L 31/02327 : the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/0288 : characterised by the doping material
• CPC Class Codes: H01L 31/03046 : including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
• CPC Class Codes: H01L 31/043 : Mechanically stacked PV cells
• CPC Class Codes: H01L 31/0525 : including means to utilise heat energy directly associated with the PV cell, e.g. integrated Seebeck elements
• CPC Class Codes: H01L 31/0543 : comprising light concentrating means of the refractive type, e.g. lenses
• CPC Class Codes: H01L 31/0547 : comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
• CPC Class Codes: H01L 31/0693 : the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
• CPC Class Codes: H01L 31/0725 : Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/167 : the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
• CPC Class Codes: H01L 31/1804 : comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/1824 : Special manufacturing methods for microcrystalline Si, uc-Si
• CPC Class Codes: H01L 31/1868 : Passivation
• CPC Class Codes: H01L 31/1876 : Particular processes or apparatus for batch treatment of the devices
• CPC Class Codes: H01L 31/1892 : methods involving the use of temporary, removable substrates
• CPC Class Codes: H01L 33/005 : Processes
• CPC Class Codes: H01L 33/0093 : Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 : Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/06 : within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/30 : containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/483 : Containers
• CPC Class Codes: H01L 33/52 : Encapsulations
• CPC Class Codes: H01L 33/54 : having a particular shape
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/58 : Optical field-shaping elements
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01S 5/021 : Silicon based substrates
• CPC Class Codes: H01S 5/02251 : using optical fibres
• CPC Class Codes: H01S 5/183 : having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/3013 : AIIIBV compounds
• CPC Class Codes: H01S 5/34326 : with a well layer based on InGa(Al)P, e.g. red laser
• CPC Class Codes: H01S 5/423 : having a vertical cavity
• CPC Class Codes: Y02E 10/52 : PV systems with concentrators
• CPC Class Codes: Y02E 10/544 : Solar cells from Group III-V materials
• CPC Class Codes: Y02E 10/545 : Microcrystalline silicon PV cells
• CPC Class Codes: Y02E 10/547 : Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Claims

1. A method of making a semiconductor-based optical system, said method comprising the steps of:

providing a device substrate having a receiving surface;

assembling a plurality of printable semiconductor elements on said receiving surface of said substrate via dry transfer contact printing;

wherein each of said printable semiconductor elements comprises a semiconductor structure having a length selected from the range of 0.0001 millimeters to 1000 millimeters, a width selected from the range of 0.0001 millimeters to 1000 millimeters and a thickness selected from the range of 0.00001 millimeters to 3 millimeters; and

providing an electrically conducting grid or mesh in electrical contact with at least a portion of said printable semiconductor elements, said grid or mesh providing one or more electrodes or electrical interconnection structures in said semiconductor-based optical system.

2. The method of claim 1 wherein each of said plurality of printable semiconductor elements comprise a semiconductor structure having a length selected from the range of 0.02 millimeters to 30 millimeters, and a width selected from the range of 0.02 millimeters to 30 millimeters.

3. The method of claim 1 wherein each of said plurality of printable semiconductor elements comprise a semiconductor structure having a length selected from the range of 0.1 millimeters to 1 millimeter, and a width selected from the range of 0.1 millimeters to 1 millimeter.

4. The method of claim 1 wherein each of said plurality of printable semiconductor elements comprise a semiconductor structure having a length selected from the range of 1 millimeters to 10 millimeters, and a width selected from the range of 1 millimeter to 10 millimeters.

5. The method of claim 1 wherein each of said plurality of printable semiconductor elements comprise a semiconductor structure having a thickness selected from the range of 0.0003 millimeters to 0.3 millimeters.

6. The method of claim 1 wherein each of said plurality of printable semiconductor elements comprise a semiconductor structure having a thickness selected from the range of 0.002 millimeters to 0.02 millimeters.

7. The method of claim 1 further comprising the step of prepatterning said receiving surface of said device substrate with one or more device components.

8. The method of claim 1 further comprising providing one or more optical components in optical communication with at least a portion of said plurality of printable semiconductor elements.

9. The method of claim 8 further comprising the step of providing an array of optical components selected from the group consisting of diffusing optics, dispersive optics, collecting optics, concentrating optics, and optical fiber, wherein said array of optical components is provided in optical communication with at least a portion of said plurality of printable semiconductor elements.

10. The method of claim 9 wherein an optical component of said array is individually addressed to each of said printable semiconductor elements.

11. The method of claim 9 wherein said array of optical components is fabricated via replica molding;

wherein said printable semiconductor elements are assembled on a receiving surface of said array of optical components via contact printing.

12. The method of claim 1 further comprising patterning first and second electrodes in electrical contact with an exposed surface of said plurality of printable semiconductor elements.

13. The method of claim 1 wherein said plurality of printable semiconductor elements is assembled on said receiving surface using a conformable transfer device.

14. The method of claim 13 wherein said assembling step comprises:

providing said conformable transfer device having a contact surface;

establishing conformal contact between an external surface of said plurality of printable semiconductor elements and said contact surface of said conformable transfer device, wherein said conformal contact bonds said plurality of printable semiconductor elements to said contact surface;

contacting said plurality of printable semiconductor elements bonded to said contact surface and said receiving surface of said device substrate; and

separating said plurality of printable semiconductor elements and said contact surface of said conformable transfer device, thereby assembling said plurality of printable semiconductor elements on said receiving surface of said device substrate.

15. The method of claim 1 wherein said plurality of printable semiconductor elements are assembled on said receiving surface using an elastomeric transfer device.

16. The method of claim 1 wherein said plurality of printable semiconductor elements are assembled on said receiving surface using an elastomeric stamp.

17. The method of claim 1 wherein said plurality of printable semiconductor elements comprise an electronic device or component of an electronic device.

18. The method of claim 1 wherein said plurality of printable semiconductor elements comprise an electronic device selected from the group consisting of:

an LED, a laser, a solar cell, a sensor, a diode, a transistor, a p-n junction, an integrated circuit, and a photodiode.

19. The method of claim 1 wherein said plurality of printable semiconductor elements comprise said semiconductor structure integrated with at least one additional structure selected from the group consisting of:

another semiconductor structure;

a dielectric structure;

conductive structure, and an optical structure.

20. The method of claim 1 wherein said plurality of printable semiconductor elements comprise said semiconductor structure integrated with at least one electronic device component selected from the group consisting of:

an electrode, a dielectric layer, an optical coating, a metal contact pad and a semiconductor channel.

21. The method of claim 1 wherein said plurality of printable semiconductor elements include at least two electronic devices selected from the group consisting of:

an LED, a laser, a solar cell, a sensor, a diode, a transistor, a p-n junction, an integrated circuit, and a photodiode.

22. The method of claim 1 wherein said plurality of printable semiconductor elements have a thickness selected from the range of 100 nanometers to 100 microns.

23. The method of claim 1 further comprising the steps of:

providing an adhesive layer on said receiving surface; and

contacting said plurality of printable semiconductor elements with said adhesive layer, thereby bonding said plurality of printable semiconductor elements to said receiving surface of said substrate.

24. The method of claim 23 wherein said adhesive layer is one or more polymer layers, prepolymer layers, elastomer layers, metal layers, or a combination thereof.

25. The method of claim 1 further comprising the step of providing a laminating or encapsulating layer in contact with said plurality of printable semiconductor elements;

said laminating or encapsulating layer capable of at least partially encapsulating or laminating said plurality of printable semiconductor elements assembled on said receiving surface.

26. The method of claim 1 wherein said plurality of printable semiconductor elements are assembled over an area of said receiving substrate selected over the range of 10000 microns² to 1 meter².

27. The method of claim 1 wherein said plurality of printable semiconductor elements are assembled on said receiving surface of said substrate with a density equal to or greater than 5 semiconductor elements mm⁻

1.

28. The method of claim 1 wherein each of said plurality of printable semiconductor elements have at least one longitudinal physical dimension less than or equal to 200 microns.

29. The method of claim 1 wherein each of said plurality of printable semiconductor elements have a cross-sectional physical dimension selected over the range of 10 nanometers to 10 microns.

30. The method of claim 1 wherein the positions of said plurality of printable semiconductor elements assembled on said receiving surface relative to each other are selected to within 10,000 nanometers.

31. The method of claim 1 wherein said plurality of printable semiconductor elements on said receiving surface are longitudinally aligned with respect to each other;

wherein said longitudinally aligned semiconductor elements extend lengths that are parallel to within 3 degrees of each other.

32. The method of claim 1 wherein said optical system is selected from the group consisting of:

an array of light emitting diodes, an array of lasers, an array of VCSELs, a passive matrix LED display, an active matrix LED display, an optical sensor and an array of optical sensors;

a sheet scanner and an array of solar cells.

33. The method of claim 1 wherein said plurality of printable semiconductor elements comprise a unitary inorganic semiconductor structure.

34. The method of claim 1 wherein said plurality of printable semiconductor elements comprise a single crystalline semiconductor material.

35. The method of claim 1, wherein said grid or mesh has a thickness selected over the range of 10 nanometers to 10000 microns, and has a fill factor less than 30%.

36. The method of claim 35 wherein said mesh or grid comprise one or more metals.

37. The method of claim 35 wherein said electrically conducting grid or mesh is more than 50% optically transparent.

38. The method of claim 35 wherein said electrically conducting grid or mesh is a laminated structure.

39. The method of claim 35 wherein said electrically conducting grid or mesh is bonded to an elastomer layer.

40. The method of claim 35 further comprising the step of assembling said grid or mesh on the receiving surface of said device substrate or on external surfaces of at least a portion of said plurality of printable semiconductor elements, thereby establishing electrical contact between said grid or mesh and said at least a portion of said plurality of printable semiconductor elements.

41. The method of claim 40 wherein electrical connection from said grid or mesh to said plurality of printable semiconductor elements is established by assembling said grid or mesh on the receiving surface of said device substrate or on external surfaces of at least a portion of said plurality of printable semiconductor elements by contact printing, wherein said grid or mesh is metal.

42. A method of making a semiconductor-based optical system, said method comprising the steps of:

providing an optical component having an internal surface;

providing an electrically conducting grid or mesh on said internal surface of said optical component;

providing a device substrate having a receiving surface;

assembling a plurality of printable semiconductor elements on said receiving surface of said substrate via contact printing;

wherein each of said printable semiconductor elements comprise a semiconductor structure having a length selected from the range of 0.0001 millimeters to 1000 millimeters, a width selected from the range of 0.0001 millimeters to 1000 millimeters and a thickness selected from the range of 0.00001 millimeters to 3 millimeters; and

transferring said optical component having said grid or mesh to said device substrate, wherein said optical component is positioned on top of said semiconductor elements assembled on said on said receiving surface of said substrate, wherein said grid or mesh is provided between said optical component and said semiconductor elements, and wherein said grid or mesh is provided in electrical contact with at least a portion of said printable semiconductor elements.

43. The method of claim 42 wherein each of said printable semiconductor elements comprises a semiconductor structure having a length selected from the range of 0.02 millimeters to 30 millimeters, and a width selected from the range of 0.02 millimeters to 30 millimeters.

44. The method of claim 42 wherein each of said printable semiconductor elements comprises a semiconductor structure having a length selected from the range of 0.1 millimeters to 1 millimeter, and a width selected from the range of 0.1 millimeters to 1 millimeter.

45. The method of claim 42 wherein each of said printable semiconductor elements comprises a semiconductor structure having a length selected from the range of 1 millimeters to 10 millimeters, and a width selected from the range of 1 millimeter to 10 millimeters.

46. The method of claim 42 wherein each of said printable semiconductor elements comprises a semiconductor structure having a thickness selected from the range of 0.0003 millimeters to 0.3 millimeters.

47. The method of claim 42 wherein each of said printable semiconductor elements comprises a semiconductor structure having a thickness selected from the range of 0.002 millimeters to 0.02 millimeters.

48. The method of claim 42 wherein said mesh or grid comprise one or more metals.

49. The method of claim 42 wherein said grid or mesh is more than 50% optically transparent.

50. The method of claim 42 wherein said grid or mesh is a laminated structure.

51. The method of claim 42 wherein said grid or mesh is bonded to an elastomer layer.

52. The method of claim 51 wherein said elastomer layer is coupled to a glass substrate, wherein said elastomer layer is position between said grid or mesh and said glass substrate.

53. The method of claim 42 wherein said grid or mesh has a fill factor less than 30%.

54. The method of claim 42 wherein said step of transferring said optical component on top of said semiconductor elements assembled on said on said receiving surface of said substrate comprises assembling said optical component on top of said semiconductor elements assembled on said on said receiving surface of said substrate using contact printing.

55. The method of claim 42 wherein said grid or mesh is assembled on said internal surface of said optical component via contact printing.

56. The method of claim 42 wherein said grid or mesh is assembled on said internal surface of said optical component using a conformable transfer device.

57. The method of claim 42 wherein said grid or mesh is assembled on said internal surface of said optical component using an elastomeric transfer device.

58. The method of claim 42 wherein said printable semiconductor elements are assembled on said receiving surface using dry transfer contact printing.

59. The method of claim 42 wherein said optical component is a light collecting optical component, a light concentrating optical component, a light diffusing optical component, a dispersing optical component or a light filtering optical component.

60. The method of claim 42 wherein said optical component is a lens or lens array.

61. The method of claim 42 wherein said optical component is a PDMS molded lens or a PDMS molded lens array.

62. The method of claim 42 wherein said printable semiconductor elements are an electronic device or component of an electronic device.

63. The method of claim 42 wherein said printable semiconductor element are one or more electronic device selected from the group consisting of:

an LED, a laser, a solar cell, a sensor, a diode, a transistor, a p-n junction, an integrated circuit, and a photodiode.

64. The method of claim 42 wherein said printable semiconductor element comprises said semiconductor structure integrated with at least one additional structure selected from the group consisting of:

another semiconductor structure;

a dielectric structure;

conductive structure, and an optical structure.

65. The method of claim 42 wherein said printable semiconductor element comprises said semiconductor structure integrated with at least one electronic device component selected from the group consisting of:

an electrode, a dielectric layer, an optical coating, a metal contact pad and a semiconductor channel.

66. The method of claim 42 wherein said printable semiconductor element has a thickness selected from the range of 100 nanometers to 100 microns.

67. A semiconductor-based optical system comprising:

a device substrate having a receiving surface;

a plurality of printable semiconductor elements supported by said receiving surface;

wherein each of said printable semiconductor element comprises a semiconductor structure having a length selected from the range of 0.0001 millimeters to 1000 millimeters, a width selected from the range of 0.0001 millimeters to 1000 millimeters and a thickness selected from the range of 0.00001 millimeters to 3 millimeters; and

a grid or mesh provided in electrical contact with at least a portion of said plurality of printable semiconductor elements supported by said receiving surface, said grid or mesh comprising an electrically conductive material, wherein said grid or mesh provides an electrical interconnect structure or electrode of said optical system, wherein said grid or mesh has a thickness selected over the range of 10 nanometers to 10000 microns, and has a fill factor less than 30%.