Process of treating defects during the bonding of wafers
First Claim
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1. A method of processing a semiconductor wafer, the method comprising:
- leveling a surface of an adhesion material on a first wafer;
bonding the first wafer with a second wafer using the adhesion material;
detecting defects at a bonding interface between the adhesion material on the first wafer and the second wafer;
separating the first wafer together with the adhesion material from the second wafer at the bonding interface; and
again leveling the surface of the adhesion material on the first wafer.
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Abstract
The invention concerns a process of preparing a thin layer to be transferred onto a substrate having a surface topology and, therefore, variations in altitude or level, in a direction perpendicular to a plane defined by the thin layer, this process comprising the formation on the thin layer of a layer of adhesive material, the thickness of which enables carrying out a plurality of polishing steps of its surface in order to eliminate any defect or void or almost any defect or void, in preparation for an assembly via a molecular kind of bonding with the substrate.
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22 Claims
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1. A method of processing a semiconductor wafer, the method comprising:
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leveling a surface of an adhesion material on a first wafer; bonding the first wafer with a second wafer using the adhesion material; detecting defects at a bonding interface between the adhesion material on the first wafer and the second wafer; separating the first wafer together with the adhesion material from the second wafer at the bonding interface; and again leveling the surface of the adhesion material on the first wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of processing semiconductor wafers, the method comprising:
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leveling at least one of a surface of an adhesion material on a first wafer and a surface of an adhesion material on a second wafer; bonding the first wafer and the second wafer using the adhesion materials on the respective wafers; detecting defects at a bonding interface between the adhesion material on the first wafer and the adhesion material on the second wafer; separating the first wafer and the adhesion material thereon from the second wafer and the adhesion material thereon at the bonding interface; and again leveling at least one of the surface of the adhesion material on the first wafer and the surface of the adhesion material on the second wafer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification