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Process of treating defects during the bonding of wafers

  • US 8,722,515 B2
  • Filed: 08/02/2013
  • Issued: 05/13/2014
  • Est. Priority Date: 01/17/2008
  • Status: Active Grant
First Claim
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1. A method of processing a semiconductor wafer, the method comprising:

  • leveling a surface of an adhesion material on a first wafer;

    bonding the first wafer with a second wafer using the adhesion material;

    detecting defects at a bonding interface between the adhesion material on the first wafer and the second wafer;

    separating the first wafer together with the adhesion material from the second wafer at the bonding interface; and

    again leveling the surface of the adhesion material on the first wafer.

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