Controlling defects in thin wafer handling
First Claim
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1. A method comprising:
- bonding a wafer on a carrier through an adhesive;
after the step of bonding the wafer, performing a thinning process on the wafer; and
after the step of performing the thinning process, removing a portion of the adhesive not covered by the wafer, wherein a portion of the adhesive covered by the wafer is not removed, wherein any plasma processes performed after the step of performing the thinning process is also performed after the removing the portion of the adhesive, and wherein the removing the portion of the adhesive comprises rotating the wafer.
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Abstract
A method includes bonding a wafer on a carrier through an adhesive, and performing a thinning process on the wafer. After the step of performing the thinning process, a portion of the adhesive not covered by the wafer is removed, while the portion of the adhesive covered by the wafer is not removed.
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Citations
19 Claims
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1. A method comprising:
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bonding a wafer on a carrier through an adhesive; after the step of bonding the wafer, performing a thinning process on the wafer; and after the step of performing the thinning process, removing a portion of the adhesive not covered by the wafer, wherein a portion of the adhesive covered by the wafer is not removed, wherein any plasma processes performed after the step of performing the thinning process is also performed after the removing the portion of the adhesive, and wherein the removing the portion of the adhesive comprises rotating the wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method comprising:
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bonding a wafer on a carrier, with the wafer and the carrier being bonded on opposite sides of an adhesive; after the step of bonding the wafer, performing a thinning process to the wafer; and after the step of performing the thinning and prior to any plasma processes performed after the step of performing the thinning, dissolving portions of the adhesive not covered by the wafer by; rotating the wafer; and at a time the wafer is rotated, spraying a chemical to the portions of the adhesive not covered by the wafer, wherein the chemical is configured to dissolve the adhesive, and wherein a portion of the adhesive covered by the wafer is not removed during the step of spraying the chemical. - View Dependent Claims (11, 12, 13, 14)
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15. A method comprising:
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bonding a wafer on a carrier through an adhesive; after the step of bonding the wafer, performing a thinning process to the wafer, wherein during the step of performing the thinning process, a portion of the adhesive is removed, with a remaining portion of the adhesive having a top surface level with a top surface of the wafer; after the step of performing the thinning and prior to any plasma processes performed after the step of performing the thinning, removing portions of the adhesive not covered by the wafer by; rotating the wafer; pointing a nozzle to the top surface of the adhesive; and at a time the wafer is rotated, spraying a chemical using the nozzle to the top surface of the adhesive to remove the portions of the adhesive not covered by the wafer, wherein a portion of the adhesive covered by the wafer is not removed; and after the step of spraying the chemical, performing a process step to the wafer, with plasma used in the process step, wherein the wafer is bonded to the carrier through the adhesive during the process step. - View Dependent Claims (16, 17, 18, 19)
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Specification