Semiconductor device, power circuit, and manufacturing method of semiconductor device
First Claim
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1. A semiconductor device comprising:
- an oxide semiconductor layer over a substrate;
a first conductive layer over the oxide semiconductor layer;
a second conductive layer over the oxide semiconductor layer;
an insulating layer over the oxide semiconductor layer, the first conductive layer, and the second conductive layer;
a third conductive layer over the insulating layer, wherein the third conductive layer comprises at least a first portion which is overlapped with neither the first conductive layer nor the second conductive layer;
a fourth conductive layer over the insulating layer, the fourth conductive layer being in contact with the first conductive layer through a first opening in the insulating layer; and
a fifth conductive layer over the insulating layer, the fifth conductive layer being in contact with the second conductive layer through a second opening in the insulating layer.
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Abstract
The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer.
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Citations
29 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor layer over a substrate; a first conductive layer over the oxide semiconductor layer; a second conductive layer over the oxide semiconductor layer; an insulating layer over the oxide semiconductor layer, the first conductive layer, and the second conductive layer; a third conductive layer over the insulating layer, wherein the third conductive layer comprises at least a first portion which is overlapped with neither the first conductive layer nor the second conductive layer; a fourth conductive layer over the insulating layer, the fourth conductive layer being in contact with the first conductive layer through a first opening in the insulating layer; and a fifth conductive layer over the insulating layer, the fifth conductive layer being in contact with the second conductive layer through a second opening in the insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer over a substrate; forming a first conductive layer over the oxide semiconductor layer; forming a second conductive layer over the oxide semiconductor layer; forming an insulating layer over the oxide semiconductor layer, the first conductive layer, and the second conductive layer; forming a third conductive layer over the insulating layer, wherein the third conductive layer is formed so as to comprise at least a first portion which is overlapped with neither the first conductive layer nor the second conductive layer; forming a fourth conductive layer over the insulating layer, wherein the fourth conductive layer is formed so as to be in contact with the first conductive layer through a first opening in the insulating layer; and forming a fifth conductive layer over the insulating layer, wherein the fifth conductive layer is formed so as to be in contact with the second conductive layer through a second opening in the insulating layer. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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Specification