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Oxide semiconductor field effect transistor and method for manufacturing the same

  • US 8,723,175 B2
  • Filed: 01/24/2013
  • Issued: 05/13/2014
  • Est. Priority Date: 12/25/2007
  • Status: Expired due to Fees
First Claim
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1. A target consisting of a composite oxide which comprises In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu in the following atomic ratios (1) to (4):


  • In/(In +Zn)=0.2 to 0.8 



    (1)
    In/(In +X)=0.29 to 0.99 



    (2)
    Zn/(X+Zn)=0.29 to 0.99 



    (3)
    Zn/(In +Zn+X)=0.21 to 0.72 



    (4).

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