Oxide semiconductor field effect transistor and method for manufacturing the same
First Claim
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1. A target consisting of a composite oxide which comprises In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu in the following atomic ratios (1) to (4):
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In/(In +Zn)=0.2 to 0.8
(1)
In/(In +X)=0.29 to 0.99
(2)
Zn/(X+Zn)=0.29 to 0.99
(3)
Zn/(In +Zn+X)=0.21 to 0.72
(4).
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Abstract
A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3):
In/(In+Zn)=0.2 to 0.8 (1)
In/(In+X)=0.29 to 0.99 (2)
Zn/(X+Zn)=0.29 to 0.99 (3).
67 Citations
14 Claims
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1. A target consisting of a composite oxide which comprises In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu in the following atomic ratios (1) to (4):
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In/(In +Zn)=0.2 to 0.8
(1)
In/(In +X)=0.29 to 0.99
(2)
Zn/(X+Zn)=0.29 to 0.99
(3)
Zn/(In +Zn+X)=0.21 to 0.72
(4). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification