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Integrated field effect transistors with high voltage drain sensing

  • US 8,723,178 B2
  • Filed: 01/20/2012
  • Issued: 05/13/2014
  • Est. Priority Date: 01/20/2012
  • Status: Active Grant
First Claim
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1. An integrated circuit comprising:

  • a power metal oxide semiconductor field effect transistor (MOSFET) having a drain, a gate, and a source;

    a junction field effect transistor (JFET) having a drain, a gate, and a source, the source of the JFET being coupled to a drain sense terminal of the integrated circuit, the drain of the JFET being coupled to the drain of the power MOSFET and a drain terminal of the integrated circuit, the JFET and the power MOSFET sharing a same drift region on a substrate of the integrated circuit;

    a source terminal of the integrated circuit coupled to the source of the power MOSFET; and

    a gate terminal of the integrated circuit coupled to the gate of the power MOSFET.

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