Radiation-emitting optical component
First Claim
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1. A radiation-emitting semiconductor component, comprising:
- a substrate;
a semiconductor layer structure which includes an active semiconductor layer which, in operation, emits radiation with a spectral distribution;
electrical contacts for applying a current to the layer structure;
a coating layer which at least partially surrounds the active semiconductor layer and comprises a stack of electrically insulating layers to form an interference edge cut-off filter, the coating layer being operable to substantially hold back a short-wave component and to virtually unimpairedly transmit a longer-wave component of the radiation emitted by the active semiconductor layer;
wherein the longer-wave component transmitted by the coating layer comprises a dominant wavelength of the radiation emitted by the active semiconductor layer; and
wherein the coating layer completely covers a top face of the semiconductor layer structure and side faces of the semiconductor layer structure apart from a region of the top face that is provided with an electrical contact of said electrical contacts.
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Abstract
A radiation-emitting semiconductor component, having a layer structure which includes an active layer which, in operation, emits radiation with a spectral distribution, and electrical contacts for applying a current to the layer structure, includes a coating layer which at least partially surrounds the active layer and holds back a short-wave component of the emitted radiation.
4 Citations
10 Claims
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1. A radiation-emitting semiconductor component, comprising:
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a substrate; a semiconductor layer structure which includes an active semiconductor layer which, in operation, emits radiation with a spectral distribution; electrical contacts for applying a current to the layer structure; a coating layer which at least partially surrounds the active semiconductor layer and comprises a stack of electrically insulating layers to form an interference edge cut-off filter, the coating layer being operable to substantially hold back a short-wave component and to virtually unimpairedly transmit a longer-wave component of the radiation emitted by the active semiconductor layer; wherein the longer-wave component transmitted by the coating layer comprises a dominant wavelength of the radiation emitted by the active semiconductor layer; and wherein the coating layer completely covers a top face of the semiconductor layer structure and side faces of the semiconductor layer structure apart from a region of the top face that is provided with an electrical contact of said electrical contacts. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A radiation-emitting semiconductor component, comprising:
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a substrate; a semiconductor layer structure which includes an active semiconductor layer which, in operation, emits radiation with a spectral distribution; electrical contacts for applying a current to the layer structure; a coating layer which at least partially surrounds the active semiconductor layer and comprises a stack of electrically insulating layers to form an interference edge cut-off filter, the coating layer being operable to substantially hold back a short-wave component and to virtually unimpairedly transmit a longer-wave component of the radiation emitted by the active semiconductor layer; wherein a majority of the emitted radiation is emitted through a top face of the semiconductor layer structure remote from the substrate; wherein the longer-wave component transmitted by the coating layer comprises a dominant wavelength of the radiation emitted by the active semiconductor layer; wherein the coating layer is in direct contact with the top face of the semiconductor layer structure; and wherein the coating layer completely covers the top face of the semiconductor layer structure and side faces of the semiconductor layer structure apart from a region of the top face that is provided with an electrical contact of said electrical contacts.
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Specification