Semiconductor light source

• US 8,723,212 B2
• Filed: 05/21/2010
• Issued: 05/13/2014
• Est. Priority Date: 08/24/2001
• Status: Expired due to Fees

• Current Assignee: Satco Products Incorporated
• Original Assignee: CAO Group, Inc.
• Inventors: Cao, Densen
• Primary Examiner(s): Jackson, Jr., Jerome
• Application Number:
  US12/785,203
• Publication Number:
  US 20100224905A1
• Time in Patent Office: 1,453 Days
• Field of Search: 362/249.06, 257/99
• US Class Current: 257/99
• CPC Class Codes: F21K 9/232 specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
• CPC Class Codes: F21V 3/02 characterised by the shape
• CPC Class Codes: F21Y 2107/30 on the outer surface of cylindrical surfaces, e.g. rod-shaped supports having a circular or a polygonal cross section
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/64 Heat extraction or cooling elements

Abstract

A semiconductor light source for illuminating physical spaces includes a lead frame with multiple facets, each facet having one or more semiconductor light emitting devices mounted thereon.

Claims

1. A semiconductor light source, comprising:

an electrically and thermally conductive outer lead frame, the outer lead frame comprising;

a first end having a plurality of facets;

a second end spaced from the first end and configured for mating with an electrical socket; and

a hollow passageway extending through the outer lead frame, the hollow passageway having a first opening in the first end and a second opening in the second end;

an electrically conductive inner lead frame, the inner lead frame comprising;

a shaft having a first end and a second end spaced from the first end, the shaft extending through the hollow passageway of the outer lead frame, and

a cap attached to the first end of the shaft;

an insulation layer electrically isolating the inner lead frame from the outer lead frame; and

a semiconducting LED chip positioned on at least one facet of the plurality of facets, the semiconducting LED chip in electrical communication with the cap and in electrical communication with the outer lead frame.

2. The device as recited in claim 1 further comprising a semiconductor LED chip positioned on each one of said plurality of facets, each such semiconductor LED chip being in electrical communication with the cap and in electrical communication with the outer lead frame.

3. The device as recited in claim 1, wherein said outer lead frame further comprises an intermediate portion positioned intermediate said first and second ends.

4. The device as recited in claim 3, further comprising a base member secured to the intermediate portion.

5. The device as recited in claim 4, wherein said outer lead frame includes a central axis extending between the first and second ends and wherein the base member is axisymmetric with respect to said central axis, extending radially outward from said intermediate portion.

6. The device as recited in claim 1, wherein said insulation layer comprises an epoxy material.

7. The device as recited in claim 1, wherein said semiconducting LED chip is covered with a light conversion layer.

8. The device as recited in claim 2, wherein one or more of said semiconducting LED chips is covered with a light conversion layer.

9. The device as recited in claim 8, wherein said conversion layer comprises a phosphorous material.

10. The device recited in claim 1, wherein the shaft includes a central axis extending between the first and second ends and wherein the cap is axisymmetric with respect to said central axis.

11. The device as recited in claim 1, further comprising a housing covering the first end of the outer lead frame.

12. A semiconductor light source, comprising:

an electrically and thermally conductive outer lead frame, the outer lead frame comprising;

a first end having a plurality of facets;

a second end spaced from the first end and configured for mating with an electrical socket; and

a hollow passageway extending through the outer lead frame, the hollow passageway having a first opening in the first end and a second opening in the second end;

an electrically conductive inner lead frame, the inner lead frame comprising;

a shaft having a first end and a second end spaced from the first end, the shaft extending through the hollow passageway of the outer lead frame; and

a cap attached to the first end of the shaft;

an insulation layer electrically isolating the inner lead frame from the outer lead frame; and

a plurality of semiconducting LED chips, at least one semiconducting LED chip of the plurality of semiconducting LED chips positioned on each facet of the plurality of facets and each semiconducting LED chip of the plurality of semiconducting LED chips in electrical communication with the cap and in electrical communication with the outer lead frame.

13. The device as recited in claim 12, wherein said outer lead frame further comprises an intermediate portion positioned intermediate said first and second ends.

14. The device as recited in claim 13, further comprising a base member secured to the intermediate portion.

15. The device as recited in claim 14, wherein said outer lead frame includes a central axis extending between the first and second ends and wherein the base member is axisymmetric with respect to said central axis, extending radially outward from said intermediate portion.

16. The device as recited in claim 12, wherein said insulation layer comprises an epoxy material.

17. The device as recited in claim 12, wherein each semiconducting LED chip of the plurality of semiconducting LED chips is covered with a light conversion layer.

18. The device as recited in claim 17, wherein said conversion layer comprises a phosphorous material.

19. The device as recited in claim 12, further comprising a housing covering the first end of the outer lead frame.

20. A semiconductor light source, comprising:

an electrically and thermally conductive outer lead frame, the outer lead frame comprising;

a first end having at least one facet;

a second end spaced from the first end and configured for mating with an electrical socket; and

a hollow passageway extending through the outer lead frame, said hollow passageway having a first opening in the first end and a second opening in the second end, said hollow passageway being coaxial with a central axis of the first and second ends;

an electrically conductive inner lead frame, the inner lead frame comprising;

a shaft having a first end and a second end spaced from the first end, the shaft extending through the hollow passageway of the outer lead frame and being coaxial with the central axis; and

a cap attached to the first end of the shaft;

an insulation layer electrically isolating the inner lead frame from the outer lead frame;

at least one semiconducting LED chip positioned on the at least one facet the semiconducting LED chip in electrical communication with the cap and in electrical communication with the outer lead frame; and

a housing covering the first end of the outer lead frame, the at least one semiconducting LED chip, and the cap.