Light emitting device and light emitting device package

• US 8,723,213 B2
• Filed: 02/18/2011
• Issued: 05/13/2014
• Est. Priority Date: 02/18/2010
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Bae, Jung Hyeok, Jeong, Young Kyu, Park, Kyung Wook, Park, Duk Hyun
• Primary Examiner(s): Mondt, Johannes P
• Application Number:
  US13/030,813
• Publication Number:
  US 20110198660A1
• Time in Patent Office: 1,180 Days
• Field of Search: 257/99
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/486 adapted for surface mounting

Abstract

Provided is a light emitting device. In one embodiment, a light emitting device including: a support member; a light emitting structure on the support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a protective member at a peripheral region of an upper surface of the support member; an electrode including an upper portion being on the first conductive type semiconductor layer, a side portion extended from the upper portion and being on a side surface of the light emitting structure, and an extended portion extended from the side portion and being on the protective member; and an insulation layer between the side surface of the light emitting structure and the electrode.

Claims

1. A light emitting device comprising:

a conductive support member;

a light emitting structure on the conductive support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;

a protective member at a peripheral region of an upper surface of the conductive support member;

an electrode comprising an upper portion being on the first conductive type semiconductor layer, a side portion extended from the upper portion and being on a side surface of the light emitting structure, and an extended portion extended from the side portion and being on the protective member;

a reflective layer between the second conductive type semiconductor layer and the conductive support member; and

an insulation layer between the side surface of the light emitting structure and the electrode,

wherein a first portion of the protective member is contacted with the second conductive type semiconductor layer of the light emitting structure and a second portion of the protective member is contacted with the electrode, and

wherein the first portion of the protective member is formed between the second conductive type semiconductor layer and the reflective layer.

2. The light emitting device of claim 1, further comprising a bonding metal layer on at least a part of the extended portion.

3. The light emitting device of claim 1, wherein the side surface of the light emitting structure is inclined.

4. The light emitting device of claim 1, wherein the insulation layer comprises at least one selected from the group consisting of SiO₂, Si_xO_y, and SiO_xN_y.

5. The light emitting device of claim 1, wherein the electrode comprises a metal having an electrical conductivity and forming an ohmic contact with the first conductive type semiconductor layer.

6. The light emitting device of claim 1, wherein the electrode is formed on an entire region of the light emitting structure and the second portion of the protective member.

7. The light emitting device of claim 6, wherein the electrode is formed of a transparent conductive material.

8. The light emitting device of claim 7, wherein the transparent conductive material comprises at least one selected from the group consisting of ITO, IZO(In—

ZnO), GZO(Ga—

ZnO), AZO(Al—

ZnO), AGZO(Al—

Ga ZnO), IGZO(In—

Ga ZnO), IrOx, RuOx, RuOx/ITO, or ZnO.

9. The light emitting device of claim 1, further comprising an ohmic contact layer between the second conductive type semiconductor layer and the reflective layer.

10. The light emitting device of claim 2, wherein the bonding metal layer is overlapped with the second portion of the protective member.

11. The light emitting device of claim 1, wherein the second portion of the protective member is disposed between the electrode and the reflective layer.

12. The light emitting device of claim 1, wherein a portion of the insulating layer is disposed on a part of an upper surface of the light emitting structure.

13. The light emitting device of claim 1, wherein the insulating layer is disposed between the protective member and the electrode.

14. A light emitting device comprising:

a conductive support member;

a light emitting structure on the conductive support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;

a protective member at a peripheral region of an upper surface of the conductive support member;

an electrode comprising an upper portion being on the first conductive type semiconductor layer, a side portion extended from the upper portion and being on a side surface of the light emitting structure, and an extended portion extended from the side portion and being on the protective member;

a reflective layer between the second conductive type semiconductor layer and the conductive support member; and

an insulation layer between the side surface of the light emitting structure and the electrode,

wherein a first portion of the protective member is contacted with the second conductive type semiconductor layer of the light emitting structure and a second portion of the protective member is contacted with the electrode, and

wherein the second portion of the protective member is disposed between the electrode and the reflective layer.

15. The light emitting device of claim 14, further comprising a bonding metal layer on at least a part of the extended portion.

16. The light emitting device of claim 15, wherein the electrode is formed on an entire region of the light emitting structure and the second portion of the protective member.

17. The light emitting device of claim 16, wherein the electrode is formed of a transparent conductive material.

18. The light emitting device of claim 15, further comprising an ohmic contact layer between the second conductive type semiconductor layer and the reflective layer.

19. The light emitting device of claim 15, wherein the electrode comprises a metal having an electrical conductivity and forming an ohmic contact with the first conductive type semiconductor layer.

20. The light emitting device of claim 15, wherein the bonding metal layer is overlapped with the second portion of the protective member.