White light emitting diode package

• US 8,723,217 B2
• Filed: 12/14/2012
• Issued: 05/13/2014
• Est. Priority Date: 08/02/2012
• Status: Active Grant

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Display Co., Ltd.
• Inventors: Moon, Je-Young
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US13/715,587
• Publication Number:
  US 20140034901A1
• Time in Patent Office: 515 Days
• Field of Search: 257/99, 257/433, 257/E33.056, 257/E33.057, 257/E33.058, 257/E33.059
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/50 Wavelength conversion elements

Abstract

Disclosed is a light emitting diode package having a simplified configuration and high color reproducibility. The light emitting diode package includes a package body, first and second light emitting diode chips received in the package body, a lead frame electrically connected to the first and second light emitting diode chips, the lead frame serving to adjust color of light according to the ratio of current of the first and second light emitting diode chips, and a light conversion layer configured to cover the first and second light emitting diode chips, the light conversion layer serving to convert light emitted from the first and second light emitting diode chips into a particular wavelength of light so as to emit a desired wavelength of light.

Claims

1. A white light emitting diode package comprising:

a package body;

a first light emitting diode chip received in the package body, and the first light emitting diode chip emitting light in a first wavelength range;

a second light emitting diode chip received in the package body, the second light emitting diode chip spaced from the first light emitting diode chip, and the second light emitting diode chip emitting light in a second wavelength range which is different to the first wavelength range;

at least three of lead frames electrically connected to the first and second light emitting diode chips; and

a light conversion layer configured to cover both of the first and second light emitting diode chips, the light conversion layer serving to convert at least part of light emitted from the first and second light emitting diode chips into a third wavelength range which is different to the first and second wavelength range,

wherein the first wavelength range is a range of about 400 nm to about 460 nm, and has a Full Width At Half Maximum (FWHM) of about 10 nm to about 50 nm,

wherein the second wavelength range is a range of about 460 nm to about 550 nm, and has a Full Width At Half Maximum (FWHM) of about 10 nm to about 50 nm,

wherein the third wavelength range is a range of about 550 nm to about 660 nm,

wherein the light conversion layer comprises a resin mixed with a plurality of phosphors, and

wherein the plurality of phosphors include spherical or atypical phosphors which emit a specific single wavelength or plural wavelengths of visible light, a peak wavelength of which is in the third wavelength range, and which absorb light in a wavelength range of about 430 nm to about 550 nm.

2. The package according to claim 1, wherein each of the first and second light emitting diode chips includes:

a substrate;

buffer layers on the substrate;

an N-type nitride semiconductor layer on the buffer layers;

a multi-quantum-well active layer on the N-type semiconductor layer;

a P-type nitride semiconductor layer on the active layer;

a P-type electrode connected to the P-type nitride semiconductor layer; and

an N-type electrode connected to the N-type nitride semiconductor layer.

3. The package according to claim 2, wherein the at least three of lead frames includes:

a recess in which the first and second light emitting diode chips are mounted;

a first lead frame connected to the N-type electrode of the first light emitting diode chip;

a second lead frame connected to the P-type electrode of the first light emitting diode chip;

a third lead frame connected to the N-type electrode of the second light emitting diode chip; and

a fourth lead frame connected to the P-type electrode of the second light emitting diode chip.

4. The package according to claim 3, wherein the package body includes:

a sidewall configured to surround the first and second light emitting diode chips;

a first insulator configured to electrically isolate the first and second lead frames from each other; and

a second insulator configured to electrically isolate the third and fourth lead frames from each other.

5. The package according to claim 1, wherein the first light emitting diode chip has operating characteristics in which the plurality of phosphors are excited by wavelength energy of the first light emitting diode chip and light of mixed color from the first light emitting diode chip and the plurality of phosphors has a color coordinate value Cx of 0.130˜

0.700 and a color coordinate value Cy of 0.03˜

0.350 in the coordinate system.

6. The package according to claim 1, wherein the second light emitting diode chip has operating characteristics in which the plurality of phosphors are excited by wavelength energy of the second LED chip and light of mixed color from the second LED chip and the plurality of phosphors has a color coordinate value Cx of 0.200˜

0.700 and a color coordinate value Cy of 0.200˜

0.730 in the coordinate system.

7. The package according to claim 2,

wherein the at least three of lead frames includes:

a recess in which the first and second light emitting diode chips are mounted;

a first lead frame connected to the N-type electrode of the first light emitting diode chip;

a third lead frame connected to the N-type electrode of the second light emitting diode chip; and

a fourth lead frame connected to the P-type electrode of the second light emitting diode chip, and

wherein the P-type electrode of the first light emitting diode chip is connected to the P-type electrode of the second light emitting diode chip via a bonding wire.

8. The package according to claim 7, wherein the package body includes:

a sidewall configured to surround the first and second light emitting diode chips; and

an insulator configured to electrically isolate the third and fourth lead frames from each other.

9. The package according to claim 1, wherein the resin includes fillers that scatter light.

10. The package according to claim 1, wherein the resin includes blockers that absorb UV energy or a particular wavelength range of light.