FinFET device and method of manufacturing same
First Claim
1. A semiconductor device comprising:
- a substrate including a fin structure disposed over the substrate, the fin structure including one or more fins;
an insulation material disposed on the substrate and formed in a region between each of the one or more fins;
a dielectric layer traversing each of the one or more fins and formed on the insulation material in the region between each of the one or more fins;
a work function metal traversing each of the one or more fins and formed on the dielectric layer in the region between each of the one or more fins;
a strained material disposed on the work function metal in the region between each of the one or more fins; and
a signal metal traversing each of the one or more fins and formed on the work function metal and on the strained material.
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Accused Products
Abstract
A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a fin structure including one or more fins disposed on the substrate. The semiconductor device further includes a dielectric layer disposed on a central portion of the fin structure and traversing each of the one or more fins. The semiconductor device further includes a work function metal disposed on the dielectric layer and traversing each of the one or more fins. The semiconductor device further includes a strained material disposed on the work function metal and interposed between each of the one or more fins. The semiconductor device further includes a signal metal disposed on the work function metal and on the strained material and traversing each of the one or more fins.
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Citations
13 Claims
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1. A semiconductor device comprising:
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a substrate including a fin structure disposed over the substrate, the fin structure including one or more fins; an insulation material disposed on the substrate and formed in a region between each of the one or more fins; a dielectric layer traversing each of the one or more fins and formed on the insulation material in the region between each of the one or more fins; a work function metal traversing each of the one or more fins and formed on the dielectric layer in the region between each of the one or more fins; a strained material disposed on the work function metal in the region between each of the one or more fins; and a signal metal traversing each of the one or more fins and formed on the work function metal and on the strained material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a substrate; a fin structure including one or more fins disposed over the substrate; a dielectric layer disposed on a central portion of the fin structure and traversing each of the one or more fins; a work function metal disposed on the dielectric layer and traversing each of the one or more fins; a strained material disposed on the work function metal and interposed between each of the one or more fins; and a signal metal disposed on the work function metal and on the strained material and traversing each of the one or more fins. - View Dependent Claims (10, 11, 12, 13)
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Specification