Diode for a printable composition

• US 8,723,408 B2
• Filed: 02/22/2013
• Issued: 05/13/2014
• Est. Priority Date: 05/31/2007
• Status: Active Grant

• Current Assignee: NthDegree Technologies Worldwide Inc.
• Original Assignee: NthDegree Technologies Worldwide Inc.
• Inventors: Lowenthal, Mark David, Ray, William Johnstone, Shotton, Neil O., Blanchard, Richard A., Oraw, Brad
• Primary Examiner(s): Patel, Vip
• Application Number:
  US13/774,249
• Publication Number:
  US 20130168658A1
• Time in Patent Office: 445 Days
• Field of Search: 313/498, 313/506, 313/509, 313/512
• US Class Current: 313/498
• CPC Class Codes: H01J 1/62 Luminescent screens; Selection of materials for luminescent coatings on vessels
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/24051 Conformal with the semiconductor or solid-state device
• CPC Class Codes: H01L 2224/24101 Connecting bonding areas at the same height
• CPC Class Codes: H01L 2224/24137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/82138 the guiding structures being at least partially left in the finished device
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/83851 being an anisotropic conductive adhesive
• CPC Class Codes: H01L 2224/95101 in a liquid medium
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/13033 : TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
• CPC Class Codes: H01L 2924/13034 : Silicon Controlled Rectifier [SCR]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13062 : Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 31/022408 : for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/035281 : Shape of the body
• CPC Class Codes: H01L 31/042 : PV modules or arrays of single PV cells supporting structures for PV modules H02S20/00
• CPC Class Codes: H01L 31/0475 : PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays PV modules composed of a plurality of thin film solar cells deposited on the same substrate H01L31/046
• CPC Class Codes: H01L 31/048 : Encapsulation of modules
• CPC Class Codes: H01L 31/0504 : specially adapted for series or parallel connection of solar cells in a module
• CPC Class Codes: H01L 31/1852 : comprising a growth substrate not being an AIIIBV compound
• CPC Class Codes: H01L 31/1856 : comprising nitride compounds, e.g. GaN
• CPC Class Codes: H01L 33/20 : with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 : with a particular shape
• CPC Class Codes: H10K 30/00 : Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation integrated devices or assemblies of multiple devices H10K39/00, H10K65/00; electrolytic light-sensitive devices H01G9/20
• CPC Class Codes: H10K 50/00 : Organic light-emitting devices integrated devices or assemblies of multiple devices H10K59/00, H10K65/00; organic semiconductor lasers H01S5/36
• CPC Class Codes: H10K 50/80 : Constructional details
• CPC Class Codes: H10K 50/805 : Electrodes
• CPC Class Codes: H10K 59/90 : Assemblies of multiple devices comprising at least one organic light-emitting element
• CPC Class Codes: H10K 71/00 : Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: Y02E 10/544 : Solar cells from Group III-V materials
• CPC Class Codes: Y02E 10/547 : Monocrystalline silicon PV cells
• CPC Class Codes: Y02E 10/549 : Organic PV cells
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary diode comprises: a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between 2.5 to 7 microns; a plurality of first terminals spaced apart and coupled to the light emitting region peripherally on a first side, each first terminal of the plurality of first terminals having a height between about 0.5 to 2 microns; and one second terminal coupled centrally to a mesa region of the light emitting region on the first side, the second terminal having a height between 1 to 8 microns.

Claims

1. A diode comprising:

a light emitting or absorbing region, the light emitting or absorbing region having a mesa region;

at least one first terminal coupled to the light emitting or absorbing region on a first side and located peripherally to the mesa region; and

a second terminal coupled centrally to the mesa region on the first side;

wherein the diode has a lateral dimension less than about 50 microns and a height less than about 25 microns.

2. The diode of claim 1, wherein the light emitting or absorbing region has a lateral dimension less than about 50 microns and a height between 2.5 to 7 microns.

3. The diode of claim 1, wherein the at least one first terminal further comprises a plurality of first terminals, the plurality of first terminals spaced apart from each other and coupled to the light emitting or absorbing region peripherally to the mesa region on the first side, wherein each first terminal of the plurality of first terminals has a height between about 0.5 to 2 microns.

4. The diode of claim 1, wherein a contact of the second terminal is spaced apart from a contact of the at least one first terminal by about 2 to 5 microns in height.

5. The diode of claim 1, wherein a contact of the second terminal is spaced apart from a contact of the at least one first terminal by about 1 to 7 microns in height.

6. The diode of claim 1, wherein the second terminal has a height between about 1 to 8 microns.

7. The diode of claim 1, wherein the mesa region has a height of 0.5 to 2 microns and a lateral dimension less than about 50 microns.

8. The diode of claim 1, wherein the mesa region further comprises an alloyed metallic layer about 20 to 120 Angstroms in height and coupled to the second terminal and comprising a metal selected from the group consisting of:

nickel, gold, aluminum, silver, titanium, and combinations thereof.

9. The diode of claim 1, wherein the second terminal further comprises a center metal layer about 0.5 to 1.5 microns in height and a lateral dimension between about 6 to 10 microns, the center metal layer coupled to the mesa region of the light emitting or absorbing region.

10. The diode of claim 9, wherein the center metal layer comprises a metal selected from the group consisting of:

nickel, gold, aluminum, silver, titanium, and combinations thereof.

11. The diode of claim 9, wherein the second terminal further comprises die metal less than about 8 microns in height and alloyed to the mesa region of the light emitting or absorbing region and to the center metal layer.

12. The diode of claim 1, wherein the second terminal and the light emitting or absorbing region further comprise nitride passivation on a plurality of lateral sides.

13. The diode of claim 1, wherein the at least one first terminal comprises via metal and has a width or length less than about 11 microns.

14. The diode of claim 13, wherein the at least one first terminal comprises a metal selected from the group consisting of:

nickel, gold, aluminum, silver, titanium, and combinations thereof.

15. The diode of claim 1, wherein the light emitting or absorbing region is substantially hexagonal laterally and has a lateral dimension less than about 50 microns measured opposing face-to-face.

16. The diode of claim 1, wherein the light emitting or absorbing region comprises gallium nitride (GaN).

17. The diode of claim 16, wherein the at least one first terminal is in ohmic contact with p+ GaN and the second terminal is in ohmic contact with n+ GaN.

18. The diode of claim 16, wherein the at least one first terminal is in ohmic contact with n+ GaN and the second terminal is in ohmic contact with p+ GaN.

19. The diode of claim 1, wherein the diode has a lateral dimension between about 20 to 30 microns and a height between about 5 to 15 microns.

20. The diode of claim 1, wherein the diode has a lateral dimension between about 10 to 50 microns and a height between about 5 to 25 microns.

21. The diode of claim 1, wherein the diode is substantially hexagonal laterally, has a lateral dimension between about 10 to 50 microns measured opposing face-to-face, and a height between about 5 to 25 microns.

22. The diode of claim 1, wherein the light emitting or absorbing region of the diode has a shape selected from the group consisting of:

substantially hexagonal, substantially square, substantially triangular, substantially rectangular, substantially lobed, substantially stellate, substantially toroidal, and combinations thereof.

23. The diode of claim 1, wherein the light emitting or absorbing region of the diode has a surface texture selected from the group consisting of:

a plurality of circular rings, a plurality of substantially curvilinear trapezoids, a plurality of parallel stripes, a stellate pattern, and combinations thereof.

24. The diode of claim 1, wherein each lateral side of the diode has a substantially sigmoidal curvature and terminates in a curved point.

25. The diode of claim 1, wherein the diode comprises at least one inorganic semiconductor selected from the group consisting of:

silicon, gallium arsenide (GaAs), gallium nitride (GaN), GaP, InAlGaP, AlInGaAs, InGaNAs, AlInGaSb, and combinations thereof.

26. The diode of claim 1, wherein the diode comprises at least one organic semiconductor selected from the group consisting of:

π

-conjugated polymers, poly(acetylene)s, poly(pyrrole)s, poly(thiophene)s, polyanilines, polythiophenes, poly(p-phenylene sulfide), poly(para-phenylene vinylene)s (PPV) and PPV derivatives, poly(3-alkylthiophenes), polyindole, polypyrene, polycarbazole, polyazulene, polyazepine, poly(fluorene)s, polynaphthalene, polyaniline, polyaniline derivatives, polythiophene, polythiophene derivatives, polypyrrole, polypyrrole derivatives, polythianaphthene, polythianaphthane derivatives, polyparaphenylene, polyparaphenylene derivatives, polyacetylene, polyacetylene derivatives, polydiacethylene, polydiacetylene derivatives, polyparaphenylenevinylene, polyparaphenylenevinylene derivatives, polynaphthalene, polynaphthalene derivatives, polyisothianaphthene (PITN), polyheteroarylenvinylene (ParV) in which the heteroarylene group is thiophene, furan or pyrrol, polyphenylenesulphide (PPS), polyperinaphthalene (PPN), polyphthalocyanine (PPhc), and their derivatives, copolymers thereof and mixtures thereof.

27. A diode comprising:

a light emitting or absorbing region having a mesa region;

a plurality of first terminals coupled to the light emitting or absorbing region on a first side, the plurality of first terminals spaced apart from each other and located peripherally to the mesa region, each first terminal of the plurality of first terminals having a height less than about 2 microns; and

a second terminal coupled centrally to the mesa region of the light emitting or absorbing region on the first side, the second terminal having a height less than about 8 microns;

wherein the diode has a lateral dimension less than about 50 microns and a height less than about 25 microns.

28. The diode of claim 27, wherein the light emitting or absorbing region has a lateral dimension less than about 50 microns and a height less than about 7 microns.

29. The diode of claim 27, wherein a contact of the second terminal is spaced apart from contacts of the plurality of first metal terminals by about 2 to 5 microns in height.

30. The diode of claim 27, wherein a contact of the second terminal is spaced apart from contacts of the plurality of first metal terminals by about 1 to 7 microns in height.

31. The diode of claim 27, wherein the mesa region further comprises an alloyed metallic layer coupled to the second terminal and comprising a metal selected from the group consisting of:

nickel, gold, aluminum, silver, titanium, and combinations thereof.

32. The diode of claim 27, wherein the second terminal further comprises a center metal layer less than about 1.5 microns in height and less than about 10 microns in lateral dimension, the center metal layer coupled to the mesa region of the light emitting or absorbing region and comprising a metal selected from the group consisting of:

nickel, gold, aluminum, silver, titanium, and combinations thereof.

33. The diode of claim 32, wherein the second terminal further comprises die metal less than about 6 microns in height and having a lateral dimension less than about 11 microns and alloyed to the mesa region of the light emitting or absorbing region and to the center metal layer.

34. The diode of claim 27, wherein the second terminal and the light emitting or absorbing region further comprise nitride passivation on a plurality of lateral sides.

35. The diode of claim 27, wherein each first terminal of the plurality of first terminals comprises via metal, has a width less than about 4 microns and a length less than about 11 microns.

36. The diode of claim 27, wherein a second side of the diode has a surface texture selected from the group consisting of:

a plurality of circular rings, a plurality of substantially curvilinear trapezoids, a plurality of parallel stripes, a stellate pattern, and combinations thereof.

37. The diode of claim 27, wherein the diode is substantially hexagonal laterally, has a lateral dimension measured opposing face-to-face less than about 30 microns and a height less than about 15 microns.

38. The diode of claim 27, wherein each lateral side of the diode has a substantially sigmoidal curvature and terminates in a curved point.

39. The diode of claim 27, wherein the diode comprises at least one inorganic semiconductor selected from the group consisting of:

silicon, gallium arsenide (GaAs), gallium nitride (GaN), GaP, InAlGaP, AlInGaAs, InGaNAs, AlInGaSb and combinations thereof.

40. A diode comprising:

a light emitting or absorbing region having height less than about 7 microns;

a plurality of first terminals, the plurality of first terminals spaced apart from each other and coupled to the light emitting or absorbing region peripherally on a first side; and

a second terminal coupled centrally to a mesa region of the light emitting or absorbing region on the first side, wherein a contact of the second terminal is spaced apart from contacts of the plurality of first metal terminals by about 1 to 7 microns in height;

wherein the diode has a lateral dimension less than about 50 microns and a height less than about 25 microns, and wherein each lateral side of the diode has a substantially sigmoidal curvature and terminates in a curved point.