Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
First Claim
1. A focal plane array, comprising:
- an integrated circuit including at least a first pixel electrode and a second pixel electrode;
an opticallv sensitive layer formed on the integated circuit, a first region of the optically sensitive layer substantially overlying the first pixel electrode and a second region of the optically sensitive layer substantially overlying the second pixel electrode;
wherein a first signal is configured to be relayed from the first pixel electrode to the integrated circuit, the first signal being indicative of light absorbed in the first region of the optically sensitive layer; and
wherein a second signal is configured to be relayed from the second pixel electrode to the integrated circuit, the second signal being indicative of light absorbed in the second region of the optically sensitive layer.
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Abstract
Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.
275 Citations
13 Claims
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1. A focal plane array, comprising:
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an integrated circuit including at least a first pixel electrode and a second pixel electrode; an opticallv sensitive layer formed on the integated circuit, a first region of the optically sensitive layer substantially overlying the first pixel electrode and a second region of the optically sensitive layer substantially overlying the second pixel electrode; wherein a first signal is configured to be relayed from the first pixel electrode to the integrated circuit, the first signal being indicative of light absorbed in the first region of the optically sensitive layer; and wherein a second signal is configured to be relayed from the second pixel electrode to the integrated circuit, the second signal being indicative of light absorbed in the second region of the optically sensitive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification