Transparent conductive oxides
First Claim
1. A method of forming a transparent conductive oxide film on a substrate, comprising:
- supplying a target;
depositing on the substrate the transparent conductive oxide film in a pulsed DC reactive ion process with an RF substrate bias at an RF frequency, wherein the target receives alternating negative and positive voltages from a pulsed DC power supply through narrow band rejection filter, the narrow band rejection filter rejecting frequencies in a narrow band around the RF frequency while passing frequencies both above and below that narrow band; and
controlling at least one process parameter to provide at least one characteristic of the conductive oxide film at a particular value.
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Abstract
A method of deposition of a transparent conductive film from a metallic target is presented. A method of forming a transparent conductive oxide film according to embodiments of the present invention include depositing the transparent conductive oxide film in a pulsed DC reactive ion process with substrate bias, and controlling at least one process parameter to affect at least one characteristic of the conductive oxide film. The resulting transparent oxide film, which in some embodiments can be an indium-tin oxide film, can exhibit a wide range of material properties depending on variations in process parameters. For example, varying the process parameters can result in a film with a wide range of resistive properties and surface smoothness of the film.
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Citations
28 Claims
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1. A method of forming a transparent conductive oxide film on a substrate, comprising:
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supplying a target; depositing on the substrate the transparent conductive oxide film in a pulsed DC reactive ion process with an RF substrate bias at an RF frequency, wherein the target receives alternating negative and positive voltages from a pulsed DC power supply through narrow band rejection filter, the narrow band rejection filter rejecting frequencies in a narrow band around the RF frequency while passing frequencies both above and below that narrow band; and controlling at least one process parameter to provide at least one characteristic of the conductive oxide film at a particular value. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 28)
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19. A method of depositing a transparent conductive oxide film on a substrate, comprising:
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placing the substrate in a reaction chamber; providing pulsed DC power to a target in the reaction chamber through a narrow band rejection filter that rejects frequencies in a narrow band around an RF frequency while passing frequencies both above and below the narrow band such that the voltage on the target alternates between positive and negative voltages; providing, to the substrate, an RF bias at the RF frequency; adjusting gas flow into the reaction chamber; and providing a magnetic field at the target in order to direct deposition of the transparent conductive oxide film on the substrate in a pulsed-dc biased reactive-ion deposition process, wherein the transparent conductive oxide film exhibits at least one particular property. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27)
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Specification