Thin film transistor, method of manufacturing the same and flat panel display device having the same
First Claim
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1. A method of manufacturing a thin film transistor, comprising:
- forming a gate electrode on a substrate;
forming a gate insulating film on the gate electrode;
forming an activation layer comprising a compound semiconductor oxide or zinc oxide (ZnO), on the gate insulating film;
forming a passivation layer comprising an inorganic oxide, on the activation layer, the inorganic oxide comprising at least one metal comprised in the activation layer; and
forming source and drain electrodes in contact with the activation layer, wherein the inorganic oxide comprises gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf), vanadium (V), or a combination thereof, andwherein the forming of the passivation layer comprises forming contact holes in the passivation layer.
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Abstract
A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.
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Citations
10 Claims
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1. A method of manufacturing a thin film transistor, comprising:
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forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode; forming an activation layer comprising a compound semiconductor oxide or zinc oxide (ZnO), on the gate insulating film; forming a passivation layer comprising an inorganic oxide, on the activation layer, the inorganic oxide comprising at least one metal comprised in the activation layer; and forming source and drain electrodes in contact with the activation layer, wherein the inorganic oxide comprises gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf), vanadium (V), or a combination thereof, and wherein the forming of the passivation layer comprises forming contact holes in the passivation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a thin film transistor, comprising:
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forming a gate electrode; forming a gate insulating film on the gate electrode; forming an activation layer comprising a compound semiconductor oxide or zinc oxide (ZnO), on the gate insulating film; forming a passivation layer comprising an inorganic oxide, on the activation layer, the inorganic oxide comprising at least one metal comprised in the activation layer; forming source and drain electrodes in contact with the activation layer, and annealing the passivation layer, wherein the inorganic oxide comprises gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf), vanadium (V), or a combination thereof.
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9. A method of manufacturing a thin film transistor, comprising:
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forming a gate electrode; forming a gate insulating film on the gate electrode; forming an activation layer comprising a compound semiconductor oxide or zinc oxide (ZnO), on the gate insulating film; forming a passivation layer comprising an inorganic oxide, on the activation layer, the inorganic oxide comprising at least one metal comprised in the activation layer; and forming source and drain electrodes in contact with the activation layer, wherein the inorganic oxide comprises gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf), vanadium (V), or a combination thereof, and wherein the forming of the source and drain electrodes comprises using the passivation layer as an etch stop layer.
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10. A method of manufacturing a thin film transistor, comprising:
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forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode; forming an activation layer comprising a compound semiconductor oxide or zinc oxide (ZnO), on the gate insulating film; forming a passivation layer comprising an inorganic oxide, on the activation layer, the inorganic oxide comprising at least one metal comprised in the activation layer; and forming source and drain electrodes on the passivation layer in contact with the activation layer, wherein the inorganic oxide comprises gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf), vanadium (V), or a combination thereof.
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Specification