Methods of forming a dielectric cap layer on a metal gate structure

• US 8,728,908 B2
• Filed: 08/08/2011
• Issued: 05/20/2014
• Est. Priority Date: 08/08/2011
• Status: Active Grant

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Xie, Ruilong, Park, Chang Seo, Iacoponi, John, Taylor, William James III
• Primary Examiner(s): Lee, Hsien Ming
• Application Number:
  US13/205,050
• Publication Number:
  US 20130040450A1
• Time in Patent Office: 1,016 Days
• Field of Search: 438/308, 438/400, 438/402, 438/431, 438/788, 438/795
• US Class Current: 438/431
• CPC Class Codes: H01L 21/28088 the final conductor layer next to the insulator being a composite, e.g. TiN
• CPC Class Codes: H01L 29/4966 the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/51 Insulating materials associated therewith for MIS structures on thin film semiconductor H01L29/4908
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H01L 29/6659 with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET

Abstract

Disclosed herein are various methods of forming metal-containing insulating material regions on a metal layer of a gate structure of a semiconductor device. In one example, the method includes forming a gate structure of a transistor, the gate structure comprising at least a first metal layer, and forming a first metal-containing insulating material region in the first metal layer by performing a gas cluster ion beam process using to implant gas molecules into the first metal layer.

Claims

1. A method, comprising:

forming a replacement gate structure of a transistor, said replacement gate structure comprising at least a first metal layer, wherein forming said replacement gate structure comprises removing at least a sacrificial gate electrode and forming said replacement gate structure comprised of said first metal layer and a high-k gate insulation layer; and

forming a first metal-containing insulating material region in said first metal layer by performing a gas cluster ion beam process.

2. The method of claim 1, wherein performing said gas cluster ion beam process comprises performing said gas cluster ion beam process at a temperature of less than 400°

C.

3. The method of claim 2, further comprising performing said gas cluster ion beam process for a duration of approximately 3-8 minutes.

4. The method of claim 1, wherein performing said gas cluster ion beam process comprises performing said gas cluster ion beam process using oxygen molecules and wherein said first metal-containing insulating material is a metal oxide.

5. The method of claim 1, wherein performing said gas cluster ion beam process comprises performing said gas cluster process at an energy level of at least 3 keV.

6. The method of claim 1, wherein performing said gas cluster ion beam process comprises performing said gas cluster ion beam process at a dose of approximately 10,000 gas molecules per cluster.

7. The method of claim 1, wherein said first metal-containing insulating material region has a thickness of at least 0.5 nm.

8. The method of claim 1, wherein performing said gas cluster ion beam process comprises performing said gas cluster ion beam process using at least one of oxygen, nitrogen and fluorine gas.

9. A method, comprising:

forming a gate structure comprised of a first metal layer and a second metal layer; and

forming a first metal-containing insulating material region in said first metal layer and a second metal-containing insulating material region in said second metal layer by performing at least one gas cluster ion beam process to direct gas molecules toward said first and second metal layers.

10. The method of claim 9, wherein said gate structure is a replacement gate structure, said first metal layer is a work-function adjusting metal layer, and said second layer is a metal fill layer.

11. The method of claim 9, wherein said first metal layer is titanium nitride, said second metal layer is aluminum, said first metal-containing insulating material region is a titanium oxide and said second metal-containing insulating material region is an aluminum oxide.

12. The method of claim 9, wherein said first and second metal-containing insulating material regions are comprised of the same material.

13. The method of claim 9, wherein said first and second metal-containing insulating material regions are comprised of different materials.

14. The method of claim 9, wherein said first and second metal-containing insulating material regions have different thicknesses.

15. The method of claim 9, wherein performing said gas cluster ion beam process comprises performing said gas cluster ion beam process at a temperature of less than 400°

C.

16. The method of claim 15, further comprising performing said gas cluster ion beam process for a duration of 3-8 minutes.

17. The method of claim 15, wherein performing said gas cluster ion beam process comprises performing said gas cluster process at an energy level of at least 3 keV.

18. The method of claim 9, wherein said first and second metal-containing insulating material regions are metal oxide regions and wherein said at least one gas cluster ion beam process is performed to direct oxygen molecules toward said first and second metal layers.

19. The method of claim 18, wherein performing said gas cluster ion beam process comprises performing said gas cluster ion beam process using oxygen at a dose of approximately 10,000 oxygen molecules per cluster.

20. A method, comprising:

forming a replacement gate structure comprised of a high-k gate insulation layer, a first metal layer and a second metal layer; and

forming a first metal oxide region having a thickness of at least 0.5 nm in said first metal layer and a second metal oxide region having a thickness of at least 0.5 nm in said second metal layer by performing at least one gas cluster ion beam process to direct oxygen molecules toward said first and second metal layers, wherein said gas cluster ion beam process is performed at a temperature of less than 400°

C. and at an energy level of at least 3 keV.

21. The method of claim 20, wherein said first and second metal oxide regions are comprised of the same metal oxide.

22. The method of claim 20, wherein said first and second metal oxide regions are comprised of different metal oxides.

23. The method of claim 20, wherein said first and second metal oxide regions have different thicknesses.