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Methods of forming a dielectric cap layer on a metal gate structure

  • US 8,728,908 B2
  • Filed: 08/08/2011
  • Issued: 05/20/2014
  • Est. Priority Date: 08/08/2011
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • forming a replacement gate structure of a transistor, said replacement gate structure comprising at least a first metal layer, wherein forming said replacement gate structure comprises removing at least a sacrificial gate electrode and forming said replacement gate structure comprised of said first metal layer and a high-k gate insulation layer; and

    forming a first metal-containing insulating material region in said first metal layer by performing a gas cluster ion beam process.

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