Systems and methods for producing flat surfaces in interconnect structures
First Claim
Patent Images
1. A method of forming a semiconductor interconnect structure, comprising:
- forming a cavity in a substrate;
depositing a barrier layer on the cavity and on a first surface of the substrate;
depositing a conductor on the barrier layer and inside the cavity;
depositing a conductive sacrificial layer on the conductor; and
removing portions of the conductive sacrificial layer, the conductor, and the barrier layer from the first surface by process including polishing until the conductor inside the cavity is angled greater than zero with respect to the first surface of the substrate,wherein a polishing rate of the conductive sacrificial layer is less than a polishing rate of the conductor.
4 Assignments
0 Petitions
Accused Products
Abstract
Methods and apparatus for forming a semiconductor device are provided which may include any number of features. One feature is a method of forming an interconnect structure that results in the interconnect structure having a co-planar or flat top surface. Another feature is a method of forming an interconnect structure that results in the interconnect structure having a surface that is angled upwards greater than zero with respect to a top surface of the substrate. The interconnect structure can comprise a damascene structure, such as a single or dual damascene structure, or alternatively, can comprise a silicon-through via (TSV) structure.
28 Citations
23 Claims
-
1. A method of forming a semiconductor interconnect structure, comprising:
-
forming a cavity in a substrate; depositing a barrier layer on the cavity and on a first surface of the substrate; depositing a conductor on the barrier layer and inside the cavity; depositing a conductive sacrificial layer on the conductor; and removing portions of the conductive sacrificial layer, the conductor, and the barrier layer from the first surface by process including polishing until the conductor inside the cavity is angled greater than zero with respect to the first surface of the substrate, wherein a polishing rate of the conductive sacrificial layer is less than a polishing rate of the conductor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
-
-
13. A method of forming a semiconductor device, comprising:
-
depositing a barrier layer on a substrate comprising at least one cavity;
depositing a conductor on the barrier layer to overfill the at least one cavity;
depositing a conductive sacrificial layer on the conductor; andremoving the conductive sacrificial layer, the conductor, and the barrier layer from portions of the substrate adjacent to the at least one cavity by process including polishing until the conductor inside the cavity is angled greater than zero with respect to a surface of the substrate, and to form an interconnect structure, wherein a polishing rate of the conductive sacrificial layer is less than a polishing rate of the conductor. - View Dependent Claims (14, 15, 16, 17)
-
-
18. A method of forming a semiconductor interconnect structure, comprising:
-
forming a cavity in a substrate; depositing a barrier layer on the cavity and on a first surface of the substrate; depositing a conductor on the barrier layer and inside the cavity; depositing a conductive sacrificial layer on the conductor; and removing portions of the conductive sacrificial layer, the conductor, and the barrier layer from the first surface by a process including corrosion, until the conductor inside the cavity is angled greater than zero with respect to the first surface of the substrate, wherein a corrosion rate of the conductive sacrificial layer is less than a corrosion rate of the conductor.
-
-
19. A method of forming a semiconductor interconnect structure, comprising:
-
forming a cavity in a substrate; depositing a barrier layer on the cavity and on a first surface of the substrate; depositing a conductor on the barrier layer and inside the cavity; depositing a conductive sacrificial layer on the conductor; and removing portions of the conductive sacrificial layer, the conductor, and the barrier layer from the first surface until the conductor inside the cavity is angled greater than zero with respect to the first surface of the substrate. - View Dependent Claims (20, 21, 22, 23)
-
Specification