Method of plasma activated deposition of a conformal film on a substrate surface
First Claim
1. A method of depositing a film on a substrate surface, comprising:
- providing a substrate in a reaction chamber;
selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, tris(dimethylamido)silylazide, and bis(tert-butylhydrazido)diethylsilane;
introducing the silicon-containing reactant in vapor phase into the reaction chamber; and
introducing a second reactant in vapor phase into the reaction chamber.
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Abstract
A method of depositing a film on a substrate surface includes providing a substrate in a reaction chamber; selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido)silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane; introducing the silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto the substrate surface; introducing a second reactant in vapor phase into the reaction chamber while the silicon-containing reactant is adsorbed on the substrate surface, and wherein the second reactant is introduced without first sweeping the silicon-containing reactant out of the reaction chamber; and exposing the substrate surface to plasma to drive a reaction between the silicon-containing reactant and the second reactant on the substrate surface to form the film.
147 Citations
15 Claims
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1. A method of depositing a film on a substrate surface, comprising:
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providing a substrate in a reaction chamber; selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, tris(dimethylamido)silylazide, and bis(tert-butylhydrazido)diethylsilane; introducing the silicon-containing reactant in vapor phase into the reaction chamber; and introducing a second reactant in vapor phase into the reaction chamber. - View Dependent Claims (2, 3, 4, 5)
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6. A method of depositing a film on a substrate surface, comprising:
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(a) providing a substrate in a reaction chamber, (b) selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido)silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane; (c) introducing the silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto the substrate surface; (d) introducing a second reactant in vapor phase into the reaction chamber while the silicon-containing reactant is adsorbed on the substrate surface, wherein the second reactant is introduced without first sweeping the silicon-containing reactant out of the reaction chamber; (e) exposing the substrate surface to plasma to drive a reaction between the silicon-containing reactant and the second reactant on the substrate surface to form the film; and (f) sweeping out the second reactant in vapor phase prior to (e). - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of depositing a film on a substrate surface, comprising:
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(a) providing a substrate in a reaction chamber; (b) selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido)silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane; (c) introducing the silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto the substrate surface; (d) introducing a second reactant in vapor phase into the reaction chamber while the silicon-containing reactant is adsorbed on the substrate surface; (e) exposing the substrate surface to plasma to drive a reaction between the silicon-containing reactant and the second reactant on the substrate surface to form the film; and (f) exposing the substrate surface to the second reactant after sweeping the silicon-containing reactant out of the reaction chamber but prior to (e).
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Specification