Wet etchants including at least one etch blocker

• US 8,729,002 B2
• Filed: 03/06/2012
• Issued: 05/20/2014
• Est. Priority Date: 08/06/2007
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Sinha, Nishant, Greeley, J. Neil
• Primary Examiner(s): BOYER, CHARLES I
• Application Number:
  US13/413,157
• Publication Number:
  US 20120187335A1
• Time in Patent Office: 805 Days
• Field of Search: 510/175, 510/176, 510/504, 134/1.2, 134/1.3
• US Class Current: 510/175
• CPC Class Codes: C09K 13/06 with organic material
• CPC Class Codes: C09K 13/08 containing a fluorine compound
• CPC Class Codes: H01L 21/31055 the removal being a chemical etching step, e.g. dry etching etching per se H01L21/311
• CPC Class Codes: H01L 21/31111 by chemical means

Abstract

Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses of a film or other structure at undesirably high rates are also disclosed.

Claims

1. A wet etchant consisting of:

an etch solution consisting of water and hydrofluoric acid; and

at least one etch blocker formulated to be retained within at least one of seams, crevices, and recesses of a material to be etched and consisting of a mixture of a surface active polymer and a nonionic surfactant.

2. The wet etchant of claim 1, wherein the etch solution consists of water and hydrofluoric acid in a ratio of about 100:

1.

3. The wet etchant of claim 1, wherein the material to be etched comprises at least one of ozone-tertaethyl orthosilicate, tungsten, titanium nitride, polysilicon, and silicon dioxide.

4. The wet etchant of claim 1, wherein each of the etch solution and the at least one etch blocker is formulated such that the at least one etch blocker adsorbs to the at least one of seams, crevices, and recesses of the material to be etched.

5. A wet etchant consisting of:

an etch solution consisting of water and an etchant selected from the group consisting of hydrofluoric acid, buffered oxide etchant, and isopropanol; and

at least one etch blocker formulated to be retained within at least one of seams, crevices, and recesses of a material to be etched and consisting of a mixture of a surface active polymer and a nonionic surfactant, the surface active polymer selected from the group consisting of polyethylene glycol, polyvinyl pyrrolidine, and polyacrylic acid.

6. A wet etchant consisting of:

an etch solution consisting of water and buffered oxide etchant; and

at least one etch blocker consisting of cetyl trimethylammonium bromide.