Semiconductor device and method for manufacturing semiconductor device
First Claim
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1. A semiconductor device comprising:
- a pixel portion including a first transistor and a pixel electrode over a substrate; and
a driver circuit including a second transistor over the substrate,wherein the first transistor comprises;
a first gate electrode over the substrate;
a gate insulating layer over the first gate electrode;
a first oxide semiconductor layer over the gate insulating layer;
a first channel protective layer over and in contact with a part of the first oxide semiconductor layer; and
a first source electrode and a first drain electrode over the first channel protective layer and the first oxide semiconductor layer,wherein the second transistor comprises;
a second gate electrode over the substrate;
the gate insulating layer over the second gate electrode;
a second oxide semiconductor layer over the gate insulating layer;
a second channel protective layer over and in contact with a part of the second oxide semiconductor layer;
a second source electrode and a second drain electrode over the second channel protective layer and the second oxide semiconductor layer; and
a third gate electrode over the second channel protective layer,wherein the third gate electrode overlaps with the second gate electrode,wherein the pixel electrode is electrically connected to one of the first source electrode and the first drain electrode, andwherein the third gate electrode and the pixel electrode are provided on a same surface.
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Abstract
An object is to reduce the manufacturing cost of a semiconductor device. An object is to improve the aperture ratio of a semiconductor device. An object is to make a display portion of a semiconductor device display a higher-definition image. An object is to provide a semiconductor device which can be operated at high speed. The semiconductor device includes a driver circuit portion and a display portion over one substrate. The driver circuit portion includes: a driver circuit TFT in which source and drain electrodes are formed using a metal and a channel layer is formed using an oxide semiconductor; and a driver circuit wiring formed using a metal. The display portion includes: a pixel TFT in which source and drain electrodes are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor; and a display wiring formed using an oxide conductor.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a pixel portion including a first transistor and a pixel electrode over a substrate; and a driver circuit including a second transistor over the substrate, wherein the first transistor comprises; a first gate electrode over the substrate; a gate insulating layer over the first gate electrode; a first oxide semiconductor layer over the gate insulating layer; a first channel protective layer over and in contact with a part of the first oxide semiconductor layer; and a first source electrode and a first drain electrode over the first channel protective layer and the first oxide semiconductor layer, wherein the second transistor comprises; a second gate electrode over the substrate; the gate insulating layer over the second gate electrode; a second oxide semiconductor layer over the gate insulating layer; a second channel protective layer over and in contact with a part of the second oxide semiconductor layer; a second source electrode and a second drain electrode over the second channel protective layer and the second oxide semiconductor layer; and a third gate electrode over the second channel protective layer, wherein the third gate electrode overlaps with the second gate electrode, wherein the pixel electrode is electrically connected to one of the first source electrode and the first drain electrode, and wherein the third gate electrode and the pixel electrode are provided on a same surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a pixel portion including a first transistor and a pixel electrode over a substrate; and a driver circuit including a second transistor over the substrate, wherein the first transistor comprises; a first gate electrode over the substrate; a gate insulating layer over the first gate electrode; a first oxide semiconductor layer over the gate insulating layer; a first channel protective layer over and in contact with a part of the first oxide semiconductor layer; and a first source electrode and a first drain electrode over the first channel protective layer and the first oxide semiconductor layer, wherein the second transistor comprises; a second gate electrode over the substrate; the gate insulating layer over the second gate electrode; a second oxide semiconductor layer over the gate insulating layer; a second channel protective layer over and in contact with a part of the second oxide semiconductor layer; a second source electrode and a second drain electrode over the second channel protective layer and the second oxide semiconductor layer; and a third gate electrode over the second channel protective layer, wherein the third gate electrode overlaps with the second gate electrode, wherein the pixel electrode is electrically connected to one of the first source electrode and the first drain electrode, wherein the first gate electrode, the gate insulating layer, the first oxide semiconductor layer, the first source electrode, the first drain electrode, the first channel protective layer, and the pixel electrode have a light-transmitting property, wherein each of the first source electrode and the first drain electrode comprises an oxide conductive material, wherein each of the second source electrode and the second drain electrode comprises a metal, and wherein the third gate electrode and the pixel electrode are provided on a same surface. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Sakata, Junichiro, Miyake, Hiroyuki, Kuwabara, Hideaki
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Primary Examiner(s)ULLAH, ELIAS
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Application NumberUS12/835,906Publication NumberTime in Patent Office1,406 DaysField of Search257/59, 257/71, 257/43, 257/E21.704, 257/E29.296US Class Current257/59CPC Class CodesH01L 27/1214 comprising a plurality of T...H01L 27/1225 with semiconductor material...H01L 27/124 with a particular compositi...H01L 27/1262 with a particular formation...H01L 29/45 Ohmic electrodesH01L 29/78606 with supplementary region o...H01L 29/7869 having a semiconductor body...
