Semiconductor light emitting device and manufacturing method of the same
First Claim
1. A semiconductor light emitting device comprising:
- an N-type nitride semiconductor layer;
an active layer of a nitride semiconductor disposed on the N-type nitride semiconductor layer; and
a P-type nitride semiconductor layer disposed on the active layer,wherein the P-type nitride semiconductor layer includes a first aluminum gallium nitride layer, an indium concentration in the first aluminum gallium nitride layer is between 1E18 atoms/cm3 and 1E20 atoms/cm3 inclusive, a carbon concentration is equal to or less than 6E17 atoms/cm3, a magnesium concentration is between 5E18 atoms/cm3 and 3E19 atoms/cm3 inclusive, andY>
{(−
5.35e19)2−
(X−
2.70e19)2}1/2−
4.63e19 holds,where X and Y denote a magnesium concentration and an acceptor concentration respectively in the aluminum gallium nitride layer.
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Accused Products
Abstract
The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm3 and 1E20 atoms/cm3 inclusive. The carbon concentration is equal to or less than 6E17 atoms/cm3. Where the magnesium concentration is denoted by X and the acceptor concentration is denoted by Y, Y>{(−5.35e19)2−(X−2.70e19)2}1/2−4.63e19 holds.
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Citations
13 Claims
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1. A semiconductor light emitting device comprising:
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an N-type nitride semiconductor layer; an active layer of a nitride semiconductor disposed on the N-type nitride semiconductor layer; and a P-type nitride semiconductor layer disposed on the active layer, wherein the P-type nitride semiconductor layer includes a first aluminum gallium nitride layer, an indium concentration in the first aluminum gallium nitride layer is between 1E18 atoms/cm3 and 1E20 atoms/cm3 inclusive, a carbon concentration is equal to or less than 6E17 atoms/cm3, a magnesium concentration is between 5E18 atoms/cm3 and 3E19 atoms/cm3 inclusive, and Y>
{(−
5.35e19)2−
(X−
2.70e19)2}1/2−
4.63e19 holds,where X and Y denote a magnesium concentration and an acceptor concentration respectively in the aluminum gallium nitride layer. - View Dependent Claims (2, 3, 4, 5, 6, 13)
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7. A method for manufacturing a semiconductor light emitting device comprising:
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forming an N-type nitride semiconductor layer, an active layer of nitride semiconductor, and a P-type nitride semiconductor layer having a first aluminum gallium nitride layer including magnesium successively on a substrate by Metal Organic Chemical Vapor Deposition (MOCVD), wherein during growth of the first aluminum gallium nitride layer, a magnesium raw material, an indium raw material, and a nitrogen gas and a hydrogen gas serving as a carrier gas are supplied into a growth atmosphere, an amount of flow of the nitrogen gas is 98.6% of total flow of the carrier gas, and a growth temperature of the first aluminum gallium nitride layer is between 800°
C. and 1000°
C. inclusive,wherein the P-type nitride semiconductor layer comprises a gallium nitride layer disposed on the active layer, a P-type second aluminum gallium nitride layer disposed on the gallium nitride layer, the first aluminum gallium nitride layer disposed on the second aluminum gallium nitride layer, a thickness of the gallium nitride layer is thicker than that of the second aluminum gallium nitride layer, a thickness of the first aluminum gallium nitride layer is thicker than that of the gallium nitride, a band gap of the first aluminum gallium nitride layer is larger than that of the gallium nitride layer, and a band gap of the second aluminum gallium nitride layer is larger than that of the first aluminum gallium nitride layer. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification