×

Semiconductor switch device

  • US 8,729,605 B2
  • Filed: 06/11/2012
  • Issued: 05/20/2014
  • Est. Priority Date: 06/15/2007
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a first region of one conductivity type;

    a second region of the one conductivity type provided on the first region;

    a third region of an inverse conductivity type provided on the first region so as to be contiguous with the second region and the first region; and

    a switching device provided in the second region,wherein a first diffusion region of the one conductivity type electrically connected to the second region is formed in an upper region within the third region opposite from the first region,wherein a trench in which a gate electrode is embedded is formed in the second region, and the gate electrode is embedded so as to fill the trench halfway across a depth thereof, andwherein an interlayer insulator film is embedded in a remaining part of the trench where the gate electrode is not embedded.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×