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Semiconductor device

  • US 8,729,613 B2
  • Filed: 10/11/2012
  • Issued: 05/20/2014
  • Est. Priority Date: 10/14/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an oxide semiconductor film over a substrate;

    a source electrode and a drain electrode over the oxide semiconductor film;

    a gate insulating film over the oxide semiconductor film, wherein the gate insulating film comprises an oxide containing silicon; and

    a gate electrode over the gate insulating film,wherein the oxide semiconductor film comprises a region in which a concentration of silicon is lower than or equal to 1.0 at. %,wherein the region is located at an interface between the oxide semiconductor film and the gate insulating film and in contact with the gate insulating film, andwherein the region comprises a crystal portion.

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