Semiconductor device

• US 8,729,613 B2
• Filed: 10/11/2012
• Issued: 05/20/2014
• Est. Priority Date: 10/14/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Honda, Tatsuya, Tsubuku, Masashi, Nonaka, Yusuke, Shimazu, Takashi, Yamazaki, Shunpei
• Primary Examiner(s): HOANG, QUOC DINH
• Application Number:
  US13/649,580
• Publication Number:
  US 20130092945A1
• Time in Patent Office: 586 Days
• Field of Search: 257/59, 257/72, 257/291, 257/E29.297
• US Class Current: 257/291
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.

Claims

1. A semiconductor device comprising:

an oxide semiconductor film over a substrate;

a source electrode and a drain electrode over the oxide semiconductor film;

a gate insulating film over the oxide semiconductor film, wherein the gate insulating film comprises an oxide containing silicon; and

a gate electrode over the gate insulating film,

wherein the oxide semiconductor film comprises a region in which a concentration of silicon is lower than or equal to 1.0 at. %,

wherein the region is located at an interface between the oxide semiconductor film and the gate insulating film and in contact with the gate insulating film, and

wherein the region comprises a crystal portion.

2. The semiconductor device according to claim 1, wherein an end portion of the oxide semiconductor film is tapered at an angle of 20°

to 50°

.

3. The semiconductor device according to claim 1, wherein the oxide semiconductor film except the region comprises a second crystal portion.

4. The semiconductor device according to claim 1, further comprising a base insulating film between the substrate and the oxide semiconductor film,

wherein in the crystal portion, a c-axis is aligned in a direction perpendicular to an interface between the base insulating film and the oxide semiconductor film.

5. The semiconductor device according to claim 1, wherein the concentration of silicon in the region is lower than or equal to 0.1 at. %.

6. The semiconductor device according to claim 1, further comprising an interlayer insulating film over the gate insulating film and the gate electrode.

7. A semiconductor device comprising:

an oxide semiconductor film over a substrate;

a source electrode and a drain electrode over the oxide semiconductor film;

a gate insulating film over the oxide semiconductor film, wherein the gate insulating film comprises an oxide containing silicon; and

a gate electrode over the gate insulating film,

wherein the oxide semiconductor film comprises a region in which a concentration of silicon is lower than or equal to 1.0 at. % and a concentration of carbon is lower than or equal to 1.0×

10²⁰ atoms/cm³,

wherein the region is located at an interface between the oxide semiconductor film and the gate insulating film and in contact with the gate insulating film, and

wherein the region comprises a crystal portion.

8. The semiconductor device according to claim 7, wherein an end portion of the oxide semiconductor film is tapered at an angle of 20°

to 50°

.

9. The semiconductor device according to claim 7, wherein the oxide semiconductor film except the region comprises a second crystal portion.

10. The semiconductor device according to claim 7, further comprising a base insulating film between the substrate and the oxide semiconductor film,

wherein in the crystal portion, a c-axis is aligned in a direction perpendicular to an interface between the base insulating film and the oxide semiconductor film.

11. The semiconductor device according to claim 7, wherein the concentration of silicon in the region is lower than or equal to 0.1 at. %.

12. The semiconductor device according to claim 7, further comprising an interlayer insulating film over the gate insulating film and the gate electrode.

13. A semiconductor device comprising:

an oxide semiconductor film over a substrate;

a source electrode and a drain electrode over the oxide semiconductor film;

a gate insulating film over the oxide semiconductor film, wherein the gate insulating film comprises an oxide containing silicon; and

a gate electrode over the gate insulating film,

wherein the oxide semiconductor film comprises a region in which a concentration of silicon is lower than or equal to 1.0 at. % and a concentration of carbon is lower than or equal to 1.0×

10²⁰ atoms/cm³,

wherein the region is located at an interface between the oxide semiconductor film and the gate insulating film and in contact with the gate insulating film,

wherein the region comprises a crystal portion, and

wherein the region has a thickness less than or equal to 5 nm.

14. The semiconductor device according to claim 13, wherein an end portion of the oxide semiconductor film is tapered at an angle of 20°

to 50°

.

15. The semiconductor device according to claim 13, wherein the oxide semiconductor film except the region comprises a second crystal portion.

16. The semiconductor device according to claim 13, further comprising a base insulating film between the substrate and the oxide semiconductor film,

wherein in the crystal portion, a c-axis is aligned in a direction perpendicular to an interface between the base insulating film and the oxide semiconductor film.

17. The semiconductor device according to claim 13, wherein the concentration of silicon in the region is lower than or equal to 0.1 at. %.

18. The semiconductor device according to claim 13, further comprising an interlayer insulating film over the gate insulating film and the gate electrode.