FinFET with high mobility and strain channel
First Claim
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1. An integrated circuit device, comprising:
- a fin extending between a source and a drain, the fin having a trimmed portion between first and second end portions, the trimmed portion having a reduced profile relative to the first and second end portions and covered by a cap layer, the trimmed portion and the first and second end portions formed from a first semiconductor material, the cap layer formed from a second semiconductor material different than the first semiconductor material to form a high mobility channel; and
a gate electrode structure formed over the high mobility channel between the first and second end portions.
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Abstract
An integrated circuit device includes a fin at least partially embedded in a shallow trench isolation (STI) region and extending between a source and a drain. The fin is formed from a first semiconductor material and having a trimmed portion between first and second end portions. A cap layer, which is formed from a second semiconductor material, is disposed over the trimmed portion of the fin to form a high mobility channel. A gate electrode structure is formed over the high mobility channel and between the first and second end portions.
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Citations
20 Claims
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1. An integrated circuit device, comprising:
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a fin extending between a source and a drain, the fin having a trimmed portion between first and second end portions, the trimmed portion having a reduced profile relative to the first and second end portions and covered by a cap layer, the trimmed portion and the first and second end portions formed from a first semiconductor material, the cap layer formed from a second semiconductor material different than the first semiconductor material to form a high mobility channel; and a gate electrode structure formed over the high mobility channel between the first and second end portions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An integrated circuit device, comprising:
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a fin extending between a source and a drain, the fin having a trimmed portion between first and second end portions, the trimmed portion having a reduced profile relative to the first and second end portions and covered by first and second cap layers, the trimmed portion, the first and second end portions, and the second cap layer formed from a first semiconductor material, the first cap layer formed from a second semiconductor material different than the first semiconductor material to form a high mobility channel; and a gate electrode structure formed over the high mobility channel inward of the first and second end portions. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A method of forming a fin field effect transistor (FinFET) device, comprising:
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forming a fin from a first semiconductor material, the fin disposed between a source and a drain and at least partially embedded in a shallow trench isolation (STI) region; trimming a portion of the fin between first and second end portions to form a trimmed portion such that the portion trimmed has a reduced profile relative to the first and second end portions; capping the trimmed portion with a second semiconductor material to form a high mobility channel; and forming a gate electrode structure over the high mobility channel and between the first and second end portions. - View Dependent Claims (19, 20)
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Specification