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FinFET with high mobility and strain channel

  • US 8,729,634 B2
  • Filed: 06/15/2012
  • Issued: 05/20/2014
  • Est. Priority Date: 06/15/2012
  • Status: Active Grant
First Claim
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1. An integrated circuit device, comprising:

  • a fin extending between a source and a drain, the fin having a trimmed portion between first and second end portions, the trimmed portion having a reduced profile relative to the first and second end portions and covered by a cap layer, the trimmed portion and the first and second end portions formed from a first semiconductor material, the cap layer formed from a second semiconductor material different than the first semiconductor material to form a high mobility channel; and

    a gate electrode structure formed over the high mobility channel between the first and second end portions.

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