Power module package

• US 8,729,692 B2
• Filed: 01/18/2012
• Issued: 05/20/2014
• Est. Priority Date: 11/28/2011
• Status: Expired due to Fees

• Current Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Kim, Kwang Soo, Kwak, Young Hoon, Lee, Young Ki
• Primary Examiner(s): McCall Shepard, Sonya D
• Application Number:
  US13/353,128
• Publication Number:
  US 20130134571A1
• Time in Patent Office: 853 Days
• Field of Search: 257701-733, 257666-678
• US Class Current: 257/690
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 25/162 the devices being mounted on two or more different substrates
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]

Abstract

Disclosed herein is a power module package including: a first heat dissipation plate including a first flow path, a second flow path, and a third flow path which are sequentially formed, the first flow path and the third flow path being formed to have a step therebetween; and a second heat dissipation plate formed under the first heat dissipation plate, having one face and the other face, having a semiconductor device mounting groove formed in the one face thereof, and including a fourth flow path having one end connected to the second flow path and the other end connected to the third flow path, wherein a cooling material introduced through the first flow path is distributed to the third flow path and the fourth flow path based on the second flow path.

Claims

1. A power module package comprising:

a first heat dissipation plate including a first flow path, a second flow path, and a third flow path which are sequentially formed, the first flow path and the third flow path being formed to have a step therebetween;

a second heat dissipation plate formed under the first heat dissipation plate, having one face and the other face, having a semiconductor device mounting groove formed in the one face thereof, and including a fourth flow path having one end connected to the second flow path and the other end connected to the third flow path;

insulating layers formed on the first heat dissipation plate and the second heat dissipation plate;

metal layers including a circuit pattern and a connection pad formed on the insulating layers; and

a semiconductor device formed on the metal layers,

wherein a cooling material introduced through the first flow path is distributed to the third flow path and the fourth flow path based on the second flow path, and

wherein the first flow path, the second flow path, and the third flow path are formed to be sequentially connected at the center of the first heat dissipation plate based on a thicknesswise direction thereof.

2. The power module package as set forth in claim 1, wherein the first heat dissipation plate and the second heat dissipation plate are made of a metallic material.

3. The power module package as set forth in claim 1, wherein the semiconductor device includes a power element and a control element.

4. The power module package as set forth in claim 1, wherein when the semiconductor device is a power element, the semiconductor device is formed between the metal layer of the first heat dissipation plate and that of the second heat dissipation plate.

5. The power module package as set forth in claim 1, wherein the cooling material is water or a refrigerant.

6. The power module package as set forth in claim 1, wherein the insulating layers are made of a ceramic material.

7. The power module package as set forth in claim 1, wherein the first flow path is a region to which the cooling material is introduced, and the third flow path is a region from which the cooling material is discharged.

8. The power module package as set forth in claim 1, wherein the insulating layers are formed on opposite faces of the first heat dissipation plate and the second heat dissipation plate.

9. The power module package as set forth in claim 1, wherein the semiconductor device is formed to be positioned in the semiconductor device mounting groove.

10. The power module package as set forth in claim 1, further comprising:

an adhesive layer formed between the semiconductor device and the metal layer.

11. A power module package comprising:

a first heat dissipation plate including a first flow path, a second flow path, and a third flow path which are sequentially formed, the first flow path and the third flow path being formed to have a step therebetween;

a second heat dissipation plate formed under the first heat dissipation plate, having one face and the other face, having a semiconductor device mounting groove formed in the one face thereof, and including a fourth flow path having one end connected to the second flow path and the other end connected to the third flow path;

insulating layers formed on the first heat dissipation plate and the second heat dissipation plate;

metal layers including a circuit pattern and a connection pad formed on the insulating layers; and

a semiconductor device formed on the metal layers,

wherein a cooling material introduced through the first flow path is distributed to the third flow path and the fourth flow path based on the second flow path, and

wherein the second flow path and the third flow path have holes formed at portions thereof each in contact with the fourth flow path, toward the second heat dissipation plate.

12. A power module package comprising:

a first heat dissipation plate including a first flow path, a second flow path, and a third flow path which are sequentially formed, the first flow path and the third flow path being formed to have a step therebetween;

a second heat dissipation plate formed under the first heat dissipation plate, having one face and the other face, having a semiconductor device mounting groove formed in the one face thereof, and including a fourth flow path having one end connected to the second flow path and the other end connected to the third flow path;

insulating layers formed on the first heat dissipation plate and the second heat dissipation plate;

metal layers including a circuit pattern and a connection pad formed on the insulating layers; and

a semiconductor device formed on the metal layers,

wherein a cooling material introduced through the first flow path is distributed to the third flow path and the fourth flow path based on the second flow path, and

wherein the fourth flow path is formed at the center of the second heat dissipation plate based on a thicknesswise direction thereof.

13. A power module package comprising:

a first heat dissipation plate including a first flow path, a second flow path, and a third flow path which are sequentially formed, the first flow path and the third flow path being formed to have a step therebetween;

a second heat dissipation plate formed under the first heat dissipation plate, having one face and the other face, having a semiconductor device mounting groove formed in the one face thereof, and including a fourth flow path having one end connected to the second flow path and the other end connected to the third flow path;

insulating layers formed on the first heat dissipation plate and the second heat dissipation plate;

metal layers including a circuit pattern and a connection pad formed on the insulating layers; and

a semiconductor device formed on the metal layers,

wherein a cooling material introduced through the first flow path is distributed to the third flow path and the fourth flow path based on the second flow path, and

wherein the second heat dissipation plate further includes a first connection portion formed to be connected to one end of the fourth flow path of one face thereof and including a first connection groove corresponding to the first flow path, the second flow path, the third flow path, and the fourth flow path.

14. A power module package comprising:

a first heat dissipation plate including a first flow path, a second flow path, and a third flow path which are sequentially formed, the first flow path and the third flow path being formed to have a step therebetween;

a second heat dissipation plate formed under the first heat dissipation plate, having one face and the other face, having a semiconductor device mounting groove formed in the one face thereof, and including a fourth flow path having one end connected to the second flow path and the other end connected to the third flow path;

insulating layers formed on the first heat dissipation plate and the second heat dissipation plate;

metal layers including a circuit pattern and a connection pad formed on the insulating layers; and

a semiconductor device formed on the metal layers,

wherein a cooling material introduced through the first flow path is distributed to the third flow path and the fourth flow path based on the second flow path, and

wherein the second heat dissipation plate further includes a second connection portion formed to be connected to the other end of the fourth flow path of one face thereof and including a second connection groove corresponding to the third flow path and the fourth flow path.

15. A power module package comprising:

a first heat dissipation plate including a first flow path, a second flow path, and a third flow path which are sequentially formed, the first flow path and the third flow path being formed to have a step therebetween; and

a second heat dissipation plate formed under the first heat dissipation plate, having one face and the other face, having a semiconductor device mounting groove formed in the one face thereof, and including a fourth flow path having one end connected to the second flow path and the other end connected to the third flow path,

wherein a cooling material introduced through the first flow path is distributed to the third flow path and the fourth flow path based on the second flow path, and the second heat dissipation plate includes a first connection portion formed to be connected to one end of the fourth flow path of one face thereof and including a first connection groove corresponding to the first flow path, the second flow path, the third flow path, and the fourth flow path, and a second connection portion formed to be connected to the other end of the fourth flow path of one face thereof and including a second connection groove corresponding to the third flow path and the fourth flow path.

16. The power module package as set forth in claim 15, further comprising:

insulating layers formed on the first heat dissipation plate and the second heat dissipation plate;

metal layers including a circuit pattern and a connection pad formed on the insulating layers; and

a semiconductor device formed on the metal layers.