Display device and electronic appliance including the display device

• US 8,730,419 B2
• Filed: 10/11/2012
• Issued: 05/20/2014
• Est. Priority Date: 08/29/2007
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): KIANNI, KAVEH C
• Application Number:
  US13/649,738
• Publication Number:
  US 20130045554A1
• Time in Patent Office: 586 Days
• Field of Search: 349/43, 349/140, 349/149, 349/150, 257/64, 257/59, 257/E23.176
• US Class Current: 349/43
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1229 with different crystal properties within a device or between different devices
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate

Abstract

To provide a display device which has a narrower frame region and which includes a driver circuit not affected by variation in transistor characteristics. A base substrate having an insulating surface to which a single-crystal semiconductor layer is attached is divided into strips and is used for a driver circuit of a display device. Alternatively, a base substrate having an insulating surface to which a plurality of single-crystal semiconductor layers is attached is divided into strips and is used for a driver circuit of a display device. Accordingly, a driver circuit corresponding to a size of a display device can be used for the display device, and a display device which has a narrower frame region and which includes a driver circuit not affected by variation in transistor characteristics can be provided.

Claims

1. A method of manufacturing a display device comprising:

forming a defect layer in a single-crystal semiconductor substrate by introducing hydrogen ions into the single-crystal semiconductor substrate;

separating a first single-crystal semiconductor film from the single-crystal semiconductor substrate;

attaching the first single-crystal semiconductor film to a base substrate;

separating a second single-crystal semiconductor film from the single-crystal semiconductor substrate;

attaching the second single-crystal semiconductor film to the base substrate;

forming a driver circuit comprising a plurality of thin film transistors by using the first single-crystal semiconductor film and the second single-crystal semiconductor film attached to the base substrate;

dividing the base substrate into an elongated substrate having the driver circuit; and

attaching the elongated substrate having the driver circuit to a substrate having a pixel portion.

2. The method of manufacturing a display device according to claim 1, wherein the first single-crystal semiconductor film and the second single-crystal semiconductor film are separated from the single-crystal semiconductor substrate by performing heat treatments.

3. The method of manufacturing a display device according to claim 1, wherein the single-crystal semiconductor substrate is a single-crystal semiconductor substrate of silicon, silicon germanium, gallium arsenide, or indium phosphide.

4. The method of manufacturing a display device according to claim 1, wherein the first single-crystal semiconductor film and the second single-crystal semiconductor film separated from the single-crystal semiconductor substrate are attached and bonded to the base substrate in a longitudinal direction of the driver circuit.

5. The method of manufacturing a display device according to claim 1, wherein the base substrate is a polycrystalline semiconductor substrate or a metal substrate.

6. The method of manufacturing a display device according to claim 1, wherein the display device is a liquid crystal display device, a light-emitting display device, a digital micromirror display device, a plasma display panel, or a field emission display device.

7. The method of manufacturing a display device according to claim 1, wherein the display device is provided in an electronic appliance selected from a personal computer, a laptop computer, a DVD, a cellular phone, a portable game machine, an electronic book, a video camera, a digital still camera, a head mount display, a navigation system, a car audio system, a home-use game console, a TV broadcast reception display, and an advertisement display.

8. The method of manufacturing a display device according to claim 1, wherein the base substrate comprises a resin.

9. A method of manufacturing a display device comprising:

forming a first defect layer in a first single-crystal semiconductor substrate by introducing hydrogen ions into the first single-crystal semiconductor substrate;

separating a first single-crystal semiconductor film from the first single-crystal semiconductor substrate;

attaching the first single-crystal semiconductor film to a base substrate;

forming a second defect layer in a second single-crystal semiconductor substrate by introducing hydrogen ions into the second single-crystal semiconductor substrate;

separating a second single-crystal semiconductor film from the second single-crystal semiconductor substrate;

attaching the second single-crystal semiconductor film to the base substrate;

forming a driver circuit comprising a first thin film transistor by using the first single-crystal semiconductor film and a second thin film transistor by using the second single-crystal semiconductor film;

dividing the base substrate into an elongated substrate having the driver circuit; and

attaching the elongated substrate having the driver circuit to a substrate having a pixel portion,

wherein the first single-crystal semiconductor film in the first thin film transistor and the second single-crystal semiconductor film in the second thin film transistor have different crystal plane orientation.

10. The method of manufacturing a display device according to claim 9, wherein a first plurality of thin film transistor are formed by using the first single crystal semiconductor film and a second plurality of thin film transistor are formed by using the second single crystal semiconductor film.

11. The method of manufacturing a display device according to claim 9, wherein thermal treatment is performed to separate the first single-crystal semiconductor substrate at the first defect layer and the second single-crystal semiconductor substrate at the second defect layer.

12. The method of manufacturing a display device according to claim 9, wherein each of the first single-crystal semiconductor substrate and the second single-crystal semiconductor substrate is a single-crystal semiconductor substrate of silicon, silicon germanium, gallium arsenide or indium phosphide.

13. The method of manufacturing a display device according to claim 9, wherein the first single-crystal semiconductor film and the second single-crystal semiconductor film are attached and bonded to the base substrate in a longitudinal direction of the driver circuit.

14. The method of manufacturing a display device according to claim 9, wherein the base substrate is a polycrystalline semiconductor substrate or a metal substrate.

15. The method of manufacturing a display device according to claim 9, wherein the display device is a liquid crystal display device, a light-emitting display device, a digital micromirror display device, a plasma display panel, a field emission display device.

16. The method of manufacturing a display device according to claim 9, wherein the display device is provided in an electronic appliance selected from a personal computer, a laptop computer, a DVD, a cellular phone, a portable game machine, an electronic book, a video camera, a digital still camera, a head mount display, a navigation system, a car audio system, a home-use game console, a TV broadcast reception display, and an advertisement display.

17. The method of manufacturing a display device according to claim 9, wherein the base substrate comprises a resin.