Electrochromic devices having improved ion conducting layers

• US 8,730,552 B2
• Filed: 02/17/2011
• Issued: 05/20/2014
• Est. Priority Date: 10/11/2005
• Status: Expired due to Fees

• Current Assignee: Sage Electrochromics, Inc (Compagnie de Saint-Gobain SA)
• Original Assignee: Sage Electrochromics, Inc (Compagnie de Saint-Gobain SA)
• Inventors: Burdis, Mark Samuel, Greer, Bryan D., Weir, Douglas Glenn John
• Primary Examiner(s): TRA, TUYEN Q
• Application Number:
  US13/029,515
• Publication Number:
  US 20110135837A1
• Time in Patent Office: 1,188 Days
• Field of Search: 359265-275, 359/900, 345/105, 345/107
• US Class Current: 359/265
• CPC Class Codes: G02F 1/1525 characterised by a particular ion transporting layer, e.g. electrolyte
• CPC Class Codes: G02F 2201/16 series; tandem

Abstract

An improved ion conductor layer for use in electrochromic devices and other applications is disclosed. The improved ion-conductor layer is comprised of at least two ion transport layers and a buffer layer, wherein the at least two ion transport layers and the buffer layer alternate within the ion conductor layer such that the ion transport layers are in communication with a first and a second electrode. Electrochromic devices utilizing such an improved ion conductor layer color more deeply by virtue of the increased voltage developed across the ion conductor layer prior to electronic breakdown while reducing the amount of electronic leakage. Also disclosed are methods of making electrochromic devices incorporating the improved ion conductor layer disclosed herein and methods of making ion conductors for use in other applications.

Claims

1. A method of making an ion conductor layer comprising the steps of:

a) depositing a first ion transport layer directly onto a substrate, said first ion transport layer comprising a material selected from the group consisting of silicon oxides, aluminum oxides, aluminum nitrides, niobium oxides, tantalum oxides, zirconium oxides, yttrium oxides, hafnium oxides, and mixtures thereof;

b) depositing a buffer layer directly onto said first ion transport layer; and

c) depositing a second ion transport layer directly onto said buffer layer, said second ion transport layer comprising a material selected from the group consisting of silicon oxides, aluminum oxides, aluminum nitrides, niobium oxides, tantalum oxides, zirconium oxides, yttrium oxides, hafnium oxides, and mixtures thereof.

2. The method of claim 1, further comprising the steps of depositing additional ion transport and buffer layers onto said second ion transport layer, wherein said additional ion transport and buffer layers alternate within said ion conductor layer.

3. The method of claim 1 or 2, wherein adjacent ones of said first and second ion transport layers and said buffer layer are comprised of different materials.

4. The method of claim 3, wherein said buffer layer is comprised of a material selected from the group consisting of transparent lithium ion permeable materials and mixed conductors.

5. The method of claim 3, wherein said buffer layer is comprised of a lithium-based ceramic material.

6. The method of claim 5, wherein said lithium-based ceramic material is selected from the group consisting of lithium silicates, lithium aluminum silicates, lithium aluminum borates, lithium borates, lithium silicon oxynitrides, lithium zirconium silicates, lithium niobates, lithium borosilicates, lithium phosphosilicates, lithium nitrides and lithium aluminum fluoride.

7. The method of claim 3, wherein said buffer layer is comprised of a material selected from the group consisting of nickel oxide, cerium oxide, molybdenum oxide, vanadium oxide, and mixtures thereof.

8. The method of claim 1 or 2, comprising depositing said first and second ion transport layers by means of a method selected from the group consisting of physical vapor deposition, intermediate frequency reactive sputtering, DC sputtering, wet chemical methods, laser ablation methods, sol-gel, metallo-organic decomposition, and magnetic sputtering.

9. The method of claim 1 or 2, comprising depositing said buffer layer by means of a method selected from the group consisting of physical vapor deposition, intermediate frequency reactive sputtering, DC sputtering, wet chemical methods, laser ablation methods, sol-gel, metallo-organic decomposition, and magnetic sputtering.

10. A method of making an ion conductor layer comprising the steps of:

a) depositing a first ion transport layer directly onto a substrate;

b) depositing a buffer layer directly onto said first ion transport layer; and

c) depositing a second ion transport layer directly onto said buffer layer; and

wherein said first and second ion transport layers are deposited by means of a method selected from the group consisting of physical vapor deposition, intermediate frequency reactive sputtering, DC sputtering, wet chemical methods, laser ablation methods, sol-gel, metallo-organic decomposition, and magnetic sputtering; and

wherein said buffer layer is deposited by means of a method selected from the group consisting of physical vapor deposition, intermediate frequency reactive sputtering, DC sputtering, sol-gel, metallo-organic decomposition, and magnetic sputtering.

11. The method of claim 10, further comprising the steps of depositing additional ion transport and buffer layers onto said second ion transport layer, wherein said additional ion transport and buffer layers alternate within said ion conductor layer.

12. The method of claim 10, wherein adjacent ones of said first and second ion transport layers and said buffer layer are comprised of different materials.

13. The method of claim 12, wherein said first and second ion transport layers are comprised of an insulator.

14. The method of claim 13, wherein said insulator is selected from the group consisting of silicon oxides, aluminum oxides, aluminum nitrides, niobium oxides, tantalum oxides, titanium oxides, zirconium oxides, yttrium oxides, hafnium oxides, and mixtures thereof.

15. The method of claim 12, wherein said buffer layer is comprised of a material selected from the group consisting of transparent lithium ion permeable materials and mixed conductors.

16. The method of claim 12, wherein said buffer layer is comprised of a lithium-based ceramic material.