Power semiconductor module with wireless saw temperature sensor

• US 8,730,681 B2
• Filed: 09/23/2011
• Issued: 05/20/2014
• Est. Priority Date: 09/23/2011
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Sleven, Michael
• Primary Examiner(s): Rojas, Bernard
• Application Number:
  US13/241,431
• Publication Number:
  US 20130077222A1
• Time in Patent Office: 970 Days
• Field of Search: 361/752, 361/679.01, 361/679.4, 361/707, 361/748
• US Class Current: 361/752
• CPC Class Codes: G01K 11/265 using surface acoustic wave [SAW]
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48139 with an intermediate bond, e.g. continuous wire daisy chain
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/4903 Connectors having different sizes, e.g. different diameters
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49431 on the semiconductor or solid-state body
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 25/115 the devices being arranged next to each other
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/19107 off-chip wires

Abstract

A power semiconductor module includes a housing, a base plate disposed in the housing, a plurality of substrates mounted to the base plate, a plurality of power transistor die mounted to the substrates and a plurality of terminals mounted to the substrates and protruding through the housing. The terminals are in electrical connection with the power transistor die. The power semiconductor module further includes a wireless surface acoustic wave (SAW) temperature sensor disposed in the housing of the power semiconductor module.

Claims

1. A power semiconductor module, comprising:

a housing;

a base plate disposed in the housing;

a plurality of substrates mounted to the base plate;

a plurality of power transistor die mounted to the substrates;

a plurality of terminals mounted to the substrates and protruding through the housing, the terminals in electrical connection with the power transistor die;

a wireless surface acoustic wave (SAW) temperature sensor disposed in the housing of the power semiconductor module; and

an RF transceiver circuit disposed in the housing and configured to transmit RF pulses to the wireless SAW temperature sensor and receive RF response signals generated by the wireless SAW temperature sensor in response to the RF pulses.

2. A power semiconductor module according to claim 1, wherein the wireless SAW temperature sensor is attached to the base plate.

3. A power semiconductor module according to claim 1, wherein the wireless SAW temperature sensor is attached to one of the substrates.

4. A power semiconductor module according to claim 3, wherein the substrate to which the wireless SAW temperature sensor is attached comprises a ceramic material interposed between first and second metallization layers, and the wireless SAW temperature sensor is attached to one of the metallization layers.

5. A power semiconductor module according to claim 3, wherein the substrate to which the wireless SAW temperature sensor is attached comprises a ceramic material interposed between first and second metallization layers, and the wireless SAW temperature sensor comprises an interdigital transducer on a dielectric disposed on the ceramic material of the substrate.

6. A power semiconductor module according to claim 1, wherein the wireless SAW temperature sensor is attached to one of the terminals.

7. A power semiconductor module according to claim 1, further comprising one or more additional wireless SAW temperature sensors disposed in the housing.

8. A power semiconductor module according to claim 1, wherein the wireless SAW temperature sensor is unpowered and operable to receive an RF pulse signal and output an RF response signal as a function of the RF pulse signal and a temperature of the wireless SAW temperature sensor.

9. A power semiconductor assembly, comprising:

a power semiconductor module comprising;

a housing;

a base plate disposed in the housing;

a plurality of substrates mounted to the base plate;

a plurality of power transistor die mounted to the substrates;

a plurality of terminals mounted to the substrates and protruding through the housing, the terminals in electrical connection with the power transistor die; and

a wireless surface acoustic wave (SAW) temperature sensor disposed in the housing of the power semiconductor module;

a circuit board mounted to the housing and having a plurality of electrical connectors which receive the terminals protruding from the housing; and

an RF transceiver circuit mounted to the circuit board and configured to transmit RF pulses to the wireless SAW temperature sensor and receive RF response signals generated by the wireless SAW temperature sensor in response to the RF pulses.

10. A power semiconductor assembly according to claim 9, further comprising a controller mounted to the circuit board and electrically connected to the RF transceiver circuit, the controller configured to convert the RF response signals received by the RF transceiver circuit to temperature data.

11. A power semiconductor assembly according to claim 10, wherein the controller is further configured to control operation of the power semiconductor module based on the temperature data.

12. A power semiconductor assembly according to claim 10, wherein the controller is further configured to report the temperature data to an entity remote from the power semiconductor subassembly.

13. A power semiconductor assembly according to claim 10, wherein the controller is remotely controllable from outside the power semiconductor subassembly.

14. A power semiconductor assembly according to claim 10, wherein the controller is configured to control an oscillator of the RF transceiver circuit for generating the RF pulses.

15. A power semiconductor assembly according to claim 9, wherein the RF transceiver circuit comprises an antenna disposed on the circuit board.

16. A power semiconductor assembly according to claim 15, wherein the antenna is a wire or stripline formed as part of the circuit board.

17. A power semiconductor assembly according to claim 15, wherein the antenna is spaced apart from the RF transceiver circuit by 10 cm or less.

18. A power semiconductor assembly according to claim 15, wherein the antenna is spaced apart from the RF transceiver circuit by between 5 cm and 10 cm.

19. A power semiconductor assembly according to claim 9, further comprising one or more additional wireless SAW temperature sensors disposed in the housing of the power semiconductor module.

20. A power semiconductor assembly according to claim 9, wherein the wireless SAW temperature sensor is attached to one of the substrates.