Method and apparatus for wireless power transmission using power receiver

• US 8,730,697 B2
• Filed: 05/16/2012
• Issued: 05/20/2014
• Est. Priority Date: 05/17/2011
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Dong Zo, Kwon, Sang Wook, Park, Yun Kwon, Park, Eun Seok, Hong, Young Tack, Kim, Ki Young, Ryu, Young Ho, Kim, Nam Yun, Choi, Jin Sung, Yoon, Chang Wook
• Primary Examiner(s): Vu, Bao Q
• Application Number:
  US13/472,762
• Publication Number:
  US 20120294054A1
• Time in Patent Office: 734 Days
• Field of Search: 363/84, 363/88, 363/89
• US Class Current: 363/84
• CPC Class Codes: H02J 50/12 of the resonant type
• CPC Class Codes: H02J 50/70 involving the reduction of electric, magnetic or electromagnetic leakage fields
• CPC Class Codes: H02J 50/80 involving the exchange of data, concerning supply or distribution of electric power, between transmitting devices and receiving devices
• CPC Class Codes: H02M 7/08 arranged for operation in parallel
• CPC Class Codes: H02M 7/2195 the switches being synchronously commutated at the same frequency of the AC input voltage
• CPC Class Codes: Y02B 70/10 Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

A rectifier is provided. The rectifier includes a first rectification unit having an anode connecting to a negative radio frequency (RF) port and a cathode connecting to a positive direct current (DC) port, a second rectification unit having an anode connecting to a positive RF port and a cathode connecting to the positive DC port, a third rectification unit having an anode connecting to a ground and a cathode connecting to the negative RF port, and a fourth rectification unit having an anode connecting to the ground and a cathode connecting to the positive RF port. The first rectification unit includes a plurality of first diodes that are connected in parallel, and the second rectification unit includes a plurality of second diodes that are connected in parallel.

Claims

1. A rectifier, comprising:

a first rectification unit having an anode and a cathode, the anode being connected to a negative radio frequency (RF) port, and the cathode being connected to a positive direct current (DC) port;

a second rectification unit having an anode and a cathode, the anode being connected to a positive RF port, and the cathode being connected to the positive DC port;

a third rectification unit having an anode and a cathode, the anode being connected to a ground, and the cathode being connected to the negative RF port; and

a fourth rectification unit having an anode and a cathode, the anode being connected to the ground, and the cathode being connected to the positive RF port,

wherein the first rectification unit comprises a plurality of first diodes that are connected in parallel, and the second rectification unit comprises a plurality of second diodes that are connected in parallel.

2. The rectifier of claim 1, wherein the first rectification unit comprises two first diodes, and the second rectification unit comprises two second diodes.

3. The rectifier of claim 1, wherein the third rectification unit comprises a plurality of third diodes that are connected in parallel, and the fourth rectification unit comprises a plurality of fourth diodes that are connected in parallel.

4. The rectifier of claim 1, wherein the third rectification unit comprises a first N-metal-oxide-semiconductor field-effect transistor (N-MOSFET),

wherein the fourth rectification unit comprises a second N-MOSFET,

wherein a gate of the first N-MOSFET is connected to the positive RF port, a source of the first N-MOSFET is connected to the negative RF port, and a drain of the first N-MOSFET is connected to the ground, and

wherein a gate of the second N-MOSFET is connected to the negative RF port, a source of the second N-MOSFET is connected to the ground, and a drain of the second N-MOSFET is connected to the positive RF port.

5. The rectifier of claim 4, wherein a resistance of the first N-MOSFET is equal to or less than 200 milliohm (mΩ

), and an input capacitance of the first N-MOSFET is equal to or less than 300 picofarads (pF), and

wherein a resistance of the second N-MOSFET is equal to or less than 200 mΩ

, and an input capacitance of the second N-MOSFET is equal to or less than 300 pF.

6. The rectifier of claim 1, further comprising:

a capacitor connected to the positive DC port and the ground.

7. A power receiver, comprising:

a resonator configured to receive a power;

a rectifier configured to receive the power from the resonator via a positive radio frequency (RF) port and a negative RF port, and to rectify the received power; and

a direct current (DC)-to-DC (DC/DC) converter configured to convert the rectified power,

wherein the rectifier comprises;

a first rectification unit having an anode and a cathode, the anode being connected to the negative RF port, and the cathode being connected to a positive DC port;

a second rectification unit having an anode and a cathode, the anode being connected to the positive RF port, and the cathode being connected to the positive DC port;

a third rectification unit having an anode and a cathode, the anode being connected to a ground, and the cathode being connected to the negative RF port; and

a fourth rectification unit having an anode and a cathode, the anode being connected to the ground, and the cathode being connected to the positive RF port,

wherein the first rectification unit comprises a plurality of first diodes connected in parallel, and the second rectification unit comprises a plurality of second diodes connected in parallel.

8. The power receiver of claim 7, wherein the third rectification unit comprises a plurality of third diodes that are connected in parallel, and the fourth rectification unit comprises a plurality of fourth diodes that are connected in parallel.

9. The power receiver of claim 8, wherein the third rectification unit comprises a first N-metal-oxide-semiconductor field-effect transistor (N-MOSFET),

wherein the fourth rectification unit comprises a second N-MOSFET,

wherein a gate of the first N-MOSFET is connected to the positive RF port, a source of the first N-MOSFET is connected to the negative RF port, and a drain of the first N-MOSFET is connected to the ground, and

wherein a gate of the second N-MOSFET is connected to the negative RF port, a source of the second N-MOSFET is connected to the ground, and a drain of the second N-MOSFET is connected to the positive RF port.

10. The power receiver of claim 8, wherein the rectifier further comprises a capacitor connected to the positive DC port and the ground.

11. A power receiving method, comprising:

receiving, by a resonator, a power;

receiving, by a rectifier, the power from the resonator via a positive radio frequency (RF) port and a negative RF port, and rectifying the received power; and

converting, by a direct current (DC)-to-DC (DC/DC) converter, the rectified power,

wherein the rectifier comprises;

a first rectification unit having an anode and a cathode, the anode being connected to the negative RF port, and the cathode being connected to a positive DC port;

a second rectification unit having an anode and a cathode, the anode being connected to the positive RF port, and the cathode being connected to the positive DC port;

a third rectification unit having an anode and a cathode, the anode being connected to a ground, and the cathode being connected to the negative RF port; and

a fourth rectification unit having an anode and a cathode, the anode being connected to the ground, and the cathode being connected to the positive RF port,

wherein the first rectification unit comprises a plurality of first diodes connected in parallel, and the second rectification unit comprises a plurality of second diodes connected in parallel.

12. The power receiving method of claim 11, wherein the third rectification unit comprises a plurality of third diodes that are connected in parallel, and the fourth rectification unit comprises a plurality of fourth diodes that are connected in parallel.

13. The power receiving method of claim 11, wherein the third rectification unit comprises a first N-metal-oxide-semiconductor field-effect transistor (N-MOSFET),

wherein the fourth rectification unit comprises a second N-MOSFET,

wherein a gate of the first N-MOSFET is connected to the positive RF port, a source of the first N-MOSFET is connected to the negative RF port, and a drain of the first N-MOSFET is connected to the ground, and

wherein a gate of the second N-MOSFET is connected to the negative RF port, a source of the second N-MOSFET is connected to the ground, and a drain of the second N-MOSFET is connected to the positive RF port.

14. The power receiving method of claim 11, wherein the rectifier further comprises a capacitor connected to the positive DC port and the ground.

15. A non-transitory computer readable recording medium storing a program to cause a computer to implement the method of claim 11.