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EEPROM cell with transfer gate

  • US 8,730,728 B2
  • Filed: 09/13/2012
  • Issued: 05/20/2014
  • Est. Priority Date: 04/26/2012
  • Status: Expired due to Fees
First Claim
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1. An EEPROM cell, comprising:

  • an inverter;

    a tunneling plate;

    a data output metal oxide semiconductor field effect transistor (MOSFET) that is connected to the inverter;

    a floating plate that is connected to the inverter;

    a tunneling capacitor area that is formed between the floating plate and the tunneling plate; and

    a transfer gate that is connected to the tunneling plate,wherein the transfer gate transfers an operation voltage of the EEPROM cell that is applied to a bit line of the EEPROM cell to the tunneling plate.

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