Method of manufacturing a zinc oxide (ZnO) based semiconductor device including performing a heat treatment of a contact metal layer on a p-type ZnO semiconductor layer in a reductive gas atmosphere

• US 8,735,195 B2
• Filed: 04/08/2010
• Issued: 05/27/2014
• Est. Priority Date: 04/10/2009
• Status: Active Grant

• Current Assignee: Stanley Electric Company Limited
• Original Assignee: Stanley Electric Company Limited
• Inventors: Horio, Naochika
• Primary Examiner(s): MAI, ANH D
• Application Number:
  US12/756,278
• Publication Number:
  US 20100258795A1
• Time in Patent Office: 1,510 Days
• Field of Search: 438/46, 438/597, 438/602, 438/612, 438/642, 438/644, 438/609, 257/E33.064
• US Class Current: 438/46
• CPC Class Codes: H01L 21/02403 Oxides
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02472 Oxides
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02573 Conductivity type
• CPC Class Codes: H01L 33/0083 for devices with an active region comprising only II-VI compounds
• CPC Class Codes: H01L 33/28 containing only elements of Group II and Group VI of the Periodic Table
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

Disclosed is a method of manufacturing a ZnO-based semiconductor device having at least p-type ZnO-based semiconductor layer, which includes a step of forming a contact metal layer on the p-type ZnO-based semiconductor layer wherein the contact metal layer contains at least one of Ni and Cu; and a step of performing heat treatment of the contact metal layer and the p-type ZnO-based semiconductor layer under an oxygen-free atmosphere to form a mixture layer including elements of the p-type ZnO-based semiconductor layer and the contact metal layer at a boundary region therebetween while maintaining a metal phase layer on a surface of the contact metal layer.

Claims

1. A method for forming a contact electrode for a p-type ZnO-based semiconductor, comprising:

(A) forming a doped p-type Mg_xZn_(1-x)O layer, wherein 0<

x<

0.43, as an uppermost layer of the p-type ZnO-based semiconductor layer;

(B) forming a contact metal layer on the doped p-type Mg_xZn_(1-x)O layer to form a first p-electrode layer, wherein the contact metal layer contains at least one of Ni and Cu, and has a thickness of 60 nm or less;

(C) forming a barrier metal layer directly on the contact metal layer to form a second p-electrode layer;

(D) forming a pad metal layer on the barrier metal layer to form a third p-electrode layer; and

(E) performing a heat treatment, after steps (B), to form a mixture region of the doped p-type Mg_xZn_(1-x)O layer and the contact metal layer, wherein the heat treatment is performed under a reductive gas atmosphere containing H₂ and at a temperature in the range of 350 to 450°

C. to change the contact metal layer into an oxide layer at the interface of the contact metal layer and the doped p-type Mg_xZn_(1-x)O layer, while maintaining a metal phase layer of the contact metal layer on the side of the second p-electrode layer.

2. A method of manufacturing a zinc oxide (ZnO) based semiconductor device comprising a p-type ZnO-based semiconductor layer, comprising:

(A) forming a doped p-type Mg_xZn_(1-x)O layer, wherein 0≦

x<

0.43, as an uppermost layer of the p-type ZnO-based semiconductor layer;

(B) forming a contact metal layer on the doped p-type Mg_xZn_(1-x)O layer to form a first p-electrode layer, wherein the contact metal layer contains at least one of nickel (Ni) and copper (Cu), and has a thickness of 60 nm or less;

(C) forming a barrier metal layer directly on the contact metal layer to form a second p-electrode layer;

(D) forming a pad metal layer on the barrier metal layer to from a third p-electrode layer; and

(E) performing a heat treatment, after steps (B), (C) or (D), to form a mixture region of the doped p-type Mg_xZn_(1-x)O layer and the contact metal layer,

wherein the heat treatment is performed under a reductive gas atmosphere containing H₂ and at a temperature in the range of 350 to 450°

C. to change the contact metal layer into an oxide layer at the interface of the contact metal layer and the doped p-type Mg_xZn_(1-x)O layer, while maintaining a metal phase layer of the contact metal layer on the side of the second p-electrode layer.

3. The method according to claim 2, wherein the heat treatment is performed between steps (B) and (C).

4. The method according to claim 2, wherein a thickness of the contact metal layer is in the range of 3 nm to 30 nm.

5. The method according to claim 2, wherein the barrier metal layer comprises at least one of platinum (Pt), rhodium (Rh), palladium (Pd), iridium (Ir), titanium (Ti) and tungsten (W).

6. The method according to claim 2, wherein the ZnO-based semiconductor device is a light emitting diode (LED) including an n-type ZnO-based semiconductor layer and a light emitting layer.

7. The method according to claim 2, further comprising:

forming between steps (A) and (B) a light transmissive electrode,

wherein part of the first p-electrode layer formed in step (B) extends over the light transmissive electrode.

8. The method according to claim 2, wherein the first p-electrode layer, the second p-electrode layer and the third p-electrode layer each have a mesh-shape, and are formed over a light emitting plane.

9. The method according to claim 2, further comprising forming between steps (C) and (D), a metal reflection layer.

10. The method according to claim 9, wherein the contact metal layer has a thickness in the range of 3 nm to 30 nm.

11. The method according to claim 10, wherein the ZnO-based semiconductor device is a light emitting diode (LED), including an n-type ZnO-based semiconductor layer and a light emitting layer.

12. The method according to claim 11, wherein the barrier metal layer comprises at least one metal selected from the group consisting of platinum (Pt), rhodium (Rh), palladium (Pd), iridium (Ir), titanium (Ti) and tungsten (W).

13. The method according to claim 7, wherein the contact metal layer has a thickness in the range of 3 nm to 30 nm.

14. The method according to claim 13, wherein the ZnO-based semiconductor device is a light emitting diode (LED), including an n-type ZnO-based semiconductor layer and a light emitting layer.

15. The method according to claim 8, wherein the contact metal layer has a thickness in the range of 3 nm to 30 nm.

16. The method according to claim 15, wherein the ZnO-based semiconductor device is a light emitting diode (LED), including an n-type ZnO-based semiconductor layer and a light emitting layer.