Method for providing electrical connections to spaced conductive lines
First Claim
1. A method of fabricating an integrated circuit structure on a support structure, the method comprising:
- forming a plurality of linearly extending material stack lines each comprising a polysilicon material, a metal silicide material, and an oxide top material;
cutting the material stack lines at an angle relative a linearly extending direction to form respective angled end faces at each of the material stack lines, the respective angled end faces being spaced in the linearly extending direction; and
forming an electrical contact landing pad as an extension of each of the material stack lines at each respective angled end face.
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0 Petitions
Accused Products
Abstract
An integrated circuit and a method of formation provide a contact area formed at an angled end of at least one linearly extending conductive line. In an embodiment, conductive lines with contact landing pads are formed by patterning lines in a mask material, cutting at least one of the material lines to form an angle relative to the extending direction of the material lines, forming extensions from the angled end faces of the mask material, and patterning an underlying conductor by etching using said material lines and extension as a mask. In another embodiment, at least one conductive line is cut at an angle relative to the extending direction of the conductive line to produce an angled end face, and an electrical contact landing pad is formed in contact with the angled end face.
13 Citations
20 Claims
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1. A method of fabricating an integrated circuit structure on a support structure, the method comprising:
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forming a plurality of linearly extending material stack lines each comprising a polysilicon material, a metal silicide material, and an oxide top material; cutting the material stack lines at an angle relative a linearly extending direction to form respective angled end faces at each of the material stack lines, the respective angled end faces being spaced in the linearly extending direction; and forming an electrical contact landing pad as an extension of each of the material stack lines at each respective angled end face. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of fabricating an integrated circuit structure, the method comprising:
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forming a gate oxide material over a substrate; forming a polysilicon material over the gate oxide material; forming a metal silicide material over the polysilicon material; forming an oxide top material over the metal silicide material; forming a plurality of linearly extending parallel material lines over the oxide top material; cutting the parallel material lines at an angle relative the linearly extending direction to form respective angled end faces at each of the parallel material lines, the respective angled end faces being spaced in the linearly extending direction; forming an extension of each of the parallel material lines at each respective angled end face; etching at least the polysilicon material, metal silicide material and oxide top material using the parallel material lines and respective extensions as an etch mask to form conductive lines having respective electrical contact landing pad areas. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification