Light-emitting device having light-emitting elements with polygonal shape

• US 8,735,918 B2
• Filed: 12/02/2010
• Issued: 05/27/2014
• Est. Priority Date: 08/29/2002
• Status: Active Grant

• Current Assignee: Seoul Semiconductor Co., Ltd.
• Original Assignee: Seoul Semiconductor Co., Ltd.
• Inventors: Sakai, Shiro, Ao, Jin-Ping, Ono, Yasuo
• Primary Examiner(s): PARKER, ALLEN L
• Application Number:
  US12/958,947
• Publication Number:
  US 20110073879A1
• Time in Patent Office: 1,272 Days
• Field of Search: 257/88, 257/93
• US Class Current: 257/93
• CPC Class Codes: H01L 2224/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

Claims

1. A light emitting device, comprising:

a plurality of GaN-based light emitting elements arranged on an insulating substrate; and

a p-type electrode and an n-type electrode arranged on a GaN-based light emitting element of the plurality of GaN-based light emitting elements,

wherein the plurality of light emitting elements are connected in series,

wherein each light emitting element of the plurality of GaN-based light emitting elements comprises a polygonal shape with more than four sides, an indent portion where a first pair of sides meet at a substantially right angle, and a corner portion where a second pair of sides meet at a substantially right angle,

wherein each side of the first pair of sides is parallel with a respective side of the second pair of sides,

wherein a GaN-based light emitting element of the plurality of GaN-based light emitting elements comprises an n-type semiconductor layer comprising a polygonal shape with more than four sides, the n-type semiconductor layer being disposed between the insulating substrate and a p-type semiconductor layer,

wherein a first light emitting element, a second light emitting element, and a third light emitting element of the plurality of GaN-based light emitting elements are arranged linearly, and

wherein a side of the second pair of sides of the first light emitting element faces a side of the second pair of sides of the second light emitting element, and a side of the first pair of sides of the second light emitting element faces a side of the first pair of sides of the third light emitting element.

2. A light emitting device according to claim 1, wherein the plurality of light emitting elements are arranged in a two-dimensional pattern on the substrate.

3. A light emitting device according to claim 1, wherein the plurality of light emitting elements are electrically separated by sapphire which is used as the substrate.

4. A light emitting device according to claim 1, further comprising a plurality of electrodes, wherein an overall shape of the plurality of light emitting elements and the electrodes is approximately square.

5. The light emitting device of claim 1, wherein the at least one light emitting element comprises a polygonal shape with six sides.

6. The light emitting device of claim 1, further comprising two electrodes arranged on the substrate.

7. The light emitting device of claim 6, wherein the two electrodes are arranged at a same side of the substrate.

8. The light emitting device according to claim 1, wherein the plurality of light emitting elements are arranged in a two-dimensional pattern on the substrate.

9. The light emitting device of claim 1, wherein a fourth light emitting element, a fifth light emitting element, and a sixth light emitting element of the plurality of GaN-based light emitting elements are arranged linearly.

10. The light emitting device of claim 9, wherein a side of the first pair of sides of the fourth light emitting element faces a side of the first pair of sides of the fifth light emitting element, and a side of the second pair of sides of the fifth light emitting element faces a side of the second pair of sides of the sixth light emitting element.

11. The light emitting device of claim 10, wherein the first light emitting element, the second light emitting element, the third light emitting element, the fourth light emitting element, the fifth light emitting element, and the sixth light emitting element all have the same size and shape.

12. The light emitting device of claim 9, wherein the third light emitting element is coupled to the fourth light emitting element.

13. The light emitting device of claim 9, further comprising:

a first electrode and a second electrode arranged on the substrate,

wherein the first pair of sides of the first light emitting element faces sides of the first electrode, and

wherein the first pair of sides of the sixth light emitting element faces sides of the second electrode.

14. The light emitting device of claim 13, wherein the first electrode and the second electrode are arranged at a same side of the substrate.