Light-emitting device including a connection layer formed on a side surface thereof

• US 8,735,932 B2
• Filed: 10/05/2011
• Issued: 05/27/2014
• Est. Priority Date: 11/15/2010
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Sone, Cheol-soo, Kim, Tae-hyung, Yang, Jong-in, Song, Sang-yeob, Lee, Si-hyuk
• Primary Examiner(s): Kraig, William F
• Assistant Examiner(s): IVANOV, PAVEL G
• Application Number:
  US13/253,515
• Publication Number:
  US 20120119249A1
• Time in Patent Office: 965 Days
• Field of Search: 257/E23.001, 257/E21.499, 257/E33.056, 257/700, 257/E33.059, 257/E33.062, 257/99, 257/E33.066, 438/106, 438/119
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.

Claims

1. A light-emitting device comprising:

a compound semiconductor structure which comprises a first compound semiconductor layer, an active layer, and a second compound semiconductor layer;

a first electrode layer and a second electrode layer which are disposed on a surface of the second compound semiconductor layer and are respectively electrically connected to the first compound semiconductor layer and the second compound semiconductor layer;

an insulating layer which is coated on a portion of the compound semiconductor structure;

a conducting adhesive layer which is formed on a top surface of a non-conductive substrate and connects the non-conductive substrate to the first electrode layer and the insulating layer, the conducting adhesive layer continuously extending on the top surface of the non-conductive substrate to cover the entire area of the top surface of the non-conductive substrate;

a first electrode connection layer which is formed on one side surface of the non-conductive substrate and the conducting adhesive layer and is connected to the conducting adhesive layer; and

a second electrode connection layer which is formed on another side surface of the non-conductive substrate and the conducting adhesive layer and is connected to the second electrode layer,

wherein the insulating layer extends from the compound semiconductor structure to the conducting adhesive layer, and

wherein the insulating layer includes a reduced-thickness portion, the second electrode layer arranged on the reduced-thickness portion.

2. The light-emitting device of claim 1, wherein the first electrode connection layer is electrically connected to the first electrode layer through the conducting adhesive layer.

3. The light-emitting device of claim 1, further comprising an insulating film which is disposed between the second electrode connection layer and the conducting adhesive layer.

4. The light-emitting device of claim 3, wherein the insulating film extends to cover a side surface of the second electrode layer and a side surface of the non-conductive substrate.

5. The light-emitting device of claim 1, wherein the second electrode connection layer is connected to an upper side of the second electrode layer.

6. The light-emitting device of claim 1, wherein the non-conductive substrate, the first electrode connection layer, and the second electrode connection layer are connected to a package by a conductive adhesive layer, and a via-hole is formed in the conductive adhesive layer and the package to prevent a short-circuit between the first electrode connection layer and the second electrode connection layer.

7. The light-emitting device of claim 1, further comprising a protective layer which is disposed to surround the compound semiconductor structure.

8. The light-emitting device of claim 1, further comprising a protective layer which is disposed to surround the compound semiconductor structure, the first electrode connection layer, and the second electrode connection layer.

9. A light-emitting device comprising:

a compound semiconductor structure which comprises a first compound semiconductor layer, an active layer, and a second compound semiconductor layer;

a first electrode layer and a second electrode layer which are disposed on a surface of the second compound semiconductor layer and are respectively electrically connected to the first compound semiconductor layer and the second compound semiconductor layer;

an insulating layer which is coated on a portion of the compound semiconductor structure;

a conducting adhesive layer continuously extending on a top surface of a non-conductive substrate to cover the entire area of the top surface of the non-conductive substrate, the conducting adhesive layer being in contact with the first electrode layer and the insulating layer;

a first electrode connection layer formed on one side surface of the non-conductive substrate and on one side surface of the conducting adhesive layer and connected to the conducting adhesive layer; and

a second electrode connection layer formed on another side surface of the non-conductive substrate and on another side surface of the conducting adhesive layer and connected to the second electrode layer.

10. The light-emitting device of claim 9, wherein the first electrode connection layer is electrically connected to the first electrode layer through the conducting adhesive layer.

11. The light-emitting device of claim 9, further comprising an insulating film which is disposed between the second electrode connection layer and the conducting adhesive layer.

12. The light-emitting device of claim 11, wherein the insulating film extends to cover a side surface of the second electrode layer and the another side surface of the non-conductive substrate.

13. The light-emitting device of claim 9, wherein the second electrode connection layer is connected to an upper side of the second electrode layer.

14. The light-emitting device of claim 9, further comprising:

a package; and

a conductive adhesive layer interposed between the non-conductive substrate and the package,

wherein the first electrode connection layer and the second electrode connection layer are connected to the package through the conductive adhesive layer.

15. The light-emitting device of claim 9, further comprising a protective layer surrounding the compound semiconductor structure on the conducting adhesive layer.

16. The light-emitting device of claim 9, further comprising a protective layer surrounding the compound semiconductor structure, the first electrode connection layer, and the second electrode connection layer.