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Light-emitting device including a connection layer formed on a side surface thereof

  • US 8,735,932 B2
  • Filed: 10/05/2011
  • Issued: 05/27/2014
  • Est. Priority Date: 11/15/2010
  • Status: Active Grant
First Claim
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1. A light-emitting device comprising:

  • a compound semiconductor structure which comprises a first compound semiconductor layer, an active layer, and a second compound semiconductor layer;

    a first electrode layer and a second electrode layer which are disposed on a surface of the second compound semiconductor layer and are respectively electrically connected to the first compound semiconductor layer and the second compound semiconductor layer;

    an insulating layer which is coated on a portion of the compound semiconductor structure;

    a conducting adhesive layer which is formed on a top surface of a non-conductive substrate and connects the non-conductive substrate to the first electrode layer and the insulating layer, the conducting adhesive layer continuously extending on the top surface of the non-conductive substrate to cover the entire area of the top surface of the non-conductive substrate;

    a first electrode connection layer which is formed on one side surface of the non-conductive substrate and the conducting adhesive layer and is connected to the conducting adhesive layer; and

    a second electrode connection layer which is formed on another side surface of the non-conductive substrate and the conducting adhesive layer and is connected to the second electrode layer,wherein the insulating layer extends from the compound semiconductor structure to the conducting adhesive layer, andwherein the insulating layer includes a reduced-thickness portion, the second electrode layer arranged on the reduced-thickness portion.

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