Micromechanical digital capacitor with improved RF hot switching performance and reliability

• US 8,736,404 B2
• Filed: 10/01/2010
• Issued: 05/27/2014
• Est. Priority Date: 10/01/2009
• Status: Active Grant

• Current Assignee: Qorvo US, Inc. (Qorvo, Inc.)
• Original Assignee: Cavendish Kinetics Inc (Qorvo, Inc.)
• Inventors: Knipe, Richard L., Unamuno, Anartz, Van Kampen, Robertus Petrus
• Primary Examiner(s): MUSLEH, MOHAMAD A
• Application Number:
  US12/896,198
• Publication Number:
  US 20110079495A1
• Time in Patent Office: 1,334 Days
• Field of Search: 335/4, 335 78- 86, 200/181
• US Class Current: 335/78
• CPC Class Codes: H01G 5/18 due to change in inclination, e.g. by flexing, by spiral wrapping
• CPC Class Codes: H01H 59/0009 making use of micromechanics

Abstract

The present invention generally relates to RF MEMS devices that are capable of hot switching. The RF MEMS devices, by utilizing one or more spring mechanisms, are capable of hot switching. In certain embodiments, two or more sets of springs may be used that become engaged at specific points in the displacement of the cantilever of the MEMS device. The springs allow for a significant increase in the release voltage for a given pull in landing voltage.

Claims

1. A device, comprising:

a substrate having one or more electrodes formed therein;

an electrically insulating layer disposed over the substrate and the one or more electrodes;

one or more landing structures coupled to the substrate;

a MEMS element coupled to the substrate, the MEMS element movable from a first position to a second position spaced from the electrically insulating layer, the MEMS element including a first portion that contacts the electrically insulating layer when the MEMS element is in the first position and a second portion that contacts the one or more landing structures when the MEMS element is in the second position, wherein the first portion includes a waffle structure comprising a bottom layer and a top layer coupled to the bottom layer via one or more support structures, wherein the second portion consists of the bottom layer.

2. The device of claim 1, wherein the bottom layer comprises titanium aluminum nitride.

3. The device of claim 1, wherein the second portion is coupled between the first portion and a third portion that is coupled to the substrate when the MEMS element is in both the first position and the second position.

4. A device, comprising:

a substrate having one or more electrodes formed therein;

an electrically insulating layer disposed over the substrate and the one or more electrodes;

one or more landing structures coupled to the substrate;

a MEMS element coupled to the substrate, the MEMS element movable from a first position to a second position spaced from the electrically insulating layer, the MEMS element including a first portion that contacts the electrically insulating layer when the MEMS element is in the first position and a second portion that contacts the one or more landing structures when the MEMS element is in the second position, wherein the first portion includes a waffle structure comprising a bottom layer and a top layer coupled to the bottom layer via one or more support structures, wherein the second portion consists of the top layer.

5. The device of claim 4, wherein the second portion is coupled between the first portion and a third portion that is coupled to the substrate when the MEMS element is in both the first position and the second position.

6. The device of claim 4, wherein the bottom layer comprises titanium aluminum nitride.

7. The device of claim 4, wherein at least one electrode of the one or more electrodes is an RF electrode.