Semiconductor device

• US 8,736,587 B2
• Filed: 07/01/2009
• Issued: 05/27/2014
• Est. Priority Date: 07/10/2008
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Mengistu, Amare
• Assistant Examiner(s): Nadkarni, Sarvesh J
• Application Number:
  US12/495,984
• Publication Number:
  US 20100007632A1
• Time in Patent Office: 1,791 Days
• Field of Search: 345156-184
• US Class Current: 345/204
• CPC Class Codes: G02F 1/13312 Circuits comprising photodetectors for purposes other than feedback
• CPC Class Codes: G02F 1/13338 Input devices, e.g. touch panels
• CPC Class Codes: G06F 1/1616 with folding flat displays, e.g. laptop computers or notebooks having a clamshell configuration, with body parts pivoting to an open position around an axis parallel to the plane they define in closed position
• CPC Class Codes: G06F 1/1626 with a single-body enclosure integrating a flat display, e.g. Personal Digital Assistants [PDAs]
• CPC Class Codes: G06F 1/1643 the display being associated to a digitizer, e.g. laptops that can be used as penpads details related to the relative motion of the display enclosure with respect to the body enclosure, e.g. to move between laptop and tablet PC configuration G06F1/1615
• CPC Class Codes: G06F 21/32 using biometric data, e.g. fingerprints, iris scans or voiceprints
• CPC Class Codes: G06F 21/83 input devices, e.g. keyboards, mice or controllers thereof
• CPC Class Codes: G06F 3/0412 Digitisers structurally integrated in a display
• CPC Class Codes: G06F 3/0421 by interrupting or reflecting a light beam, e.g. optical touch-screen
• CPC Class Codes: G06F 3/04886 by partitioning the display area of the touch-screen or the surface of the digitising tablet into independently controllable areas, e.g. virtual keyboards or menus
• CPC Class Codes: G09G 2300/0426 Layout of electrodes and connections
• CPC Class Codes: G09G 2300/0439 Pixel structures
• CPC Class Codes: G09G 2360/142 the light being detected by light detection means within each pixel
• CPC Class Codes: G09G 3/20 for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
• CPC Class Codes: H01L 27/14645 Colour imagers
• CPC Class Codes: H01L 27/14665 Imagers using a photoconductor layer
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]
• CPC Class Codes: H10K 59/40 OLEDs integrated with touch screens
• CPC Class Codes: H10K 59/60 OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
• CPC Class Codes: H10K 59/65 OLEDs integrated with inorganic image sensors

Abstract

A semiconductor device is provided, which includes a display portion and a driver circuit portion configured to drive the display portion. The display portion includes a first pixel electrode, a second pixel electrode, a plurality of photo sensors between the first pixel electrode and the second pixel electrode, and a plurality of color filters. The driver circuit portion includes a transistor including a single crystal semiconductor layer.

Claims

1. A semiconductor device comprising:

a display portion including a first pixel electrode, a second pixel electrode, a plurality of photo sensors between the first pixel electrode and the second pixel electrode, a first color filter overlapping with the first pixel electrode, and a second color filter overlapping with the second pixel electrode,

wherein each of the first color filter and the second color filter is overlapped with two photo sensors selected from the plurality of photo sensors, and

wherein a top-view shape of the first color filter is different from a top-view shape of the second color filter.

2. The semiconductor device according to claim 1, wherein the plurality of photo sensors are overlapped with a wiring electrically connected to a transistor.

3. The semiconductor device according to claim 1, wherein the display portion includes a liquid crystal element.

4. The semiconductor device according to claim 1, wherein the display portion includes a light-emitting element.

5. The semiconductor device according to claim 1, wherein the display portion includes a light-emitting element, and wherein the light-emitting element is overlapped with one of the first color filter and the second color filter.

6. The semiconductor device according to claim 1, wherein each of the first color filter and the second color filter is one of a red color filter, a green color filter, and a blue color filter.

7. The semiconductor device according to claim 1, wherein a photoelectric conversion layer of each of the plurality of photo sensors includes an amorphous semiconductor layer or a microcrystalline semiconductor layer.

8. A semiconductor device comprising:

a display portion including a first pixel electrode, a second pixel electrode, a plurality of photo sensors between the first pixel electrode and the second pixel electrode, a first color filter overlapping with the first pixel electrode, and a second color filter overlapping with the second pixel electrode; and

a driver circuit portion configured to drive the display portion,

wherein the driver circuit portion includes a transistor including a first single crystal semiconductor layer,

wherein each of the first color filter and the second color filter is overlapped with two photo sensors selected from the plurality of photo sensors,

wherein a top-view shape of the first color filter is different from a top-view shape of the second color filter, and

wherein a photoelectric conversion layer of each of the plurality of photo sensors includes a second single crystal semiconductor layer.

9. The semiconductor device according to claim 8, wherein the plurality of photo sensors are overlapped with a wiring electrically connected to the transistor.

10. The semiconductor device according to claim 8, wherein the display portion includes a liquid crystal element.

11. The semiconductor device according to claim 8, wherein the display portion includes a light-emitting element.

12. The semiconductor device according to claim 8, wherein the display portion includes a light-emitting element, and wherein the light-emitting element is overlapped with one of the first color filter and the second color filter.

13. The semiconductor device according to claim 8, wherein each of the first color filter and the second color filter is one of a red color filter, a green color filter, and a blue color filter.

14. A semiconductor device comprising:

a display portion including a first pixel electrode, a second pixel electrode, a plurality of photo sensors between the first pixel electrode and the second pixel electrode, a first color filter overlapping with the first pixel electrode, and a second color filter overlapping with the second pixel electrode,

wherein each of the first color filter and the second color filter is overlapped with two photo sensors selected from the plurality of photo sensors.

15. The semiconductor device according to claim 14, wherein the display portion includes a liquid crystal element.

16. The semiconductor device according to claim 14, wherein the display portion includes a light-emitting element.

17. The semiconductor device according to claim 14, wherein the display portion includes a light-emitting element, and wherein the light-emitting element is overlapped with one of the first color filter and the second color filter.

18. The semiconductor device according to claim 14, wherein each of the first color filter and the second color filter is one of a red color filter, a green color filter, and a blue color filter.

19. The semiconductor device according to claim 14, wherein a photoelectric conversion layer of each of the plurality of photo sensors includes an amorphous semiconductor layer or a microcrystalline semiconductor layer.