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Nitride semiconductor laser

  • US 8,737,447 B2
  • Filed: 03/25/2010
  • Issued: 05/27/2014
  • Est. Priority Date: 03/27/2009
  • Status: Expired due to Fees
First Claim
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1. A surface-emitting laser comprising:

  • an active layer;

    a two-dimensional photonic crystal layer having a resonant mode in an in-plane direction;

    a semiconductor layer; and

    an electrode in this order,wherein the two-dimensional photonic crystal layer contains p-type conductive InxGa1-xN (0≦

    x≦

    1) as a high-refractive-index medium,the semiconductor layer contains p-type conductive InyGa1-yN (0≦

    y≦

    1), andthe thickness tPhC of the two-dimensional photonic crystal layer satisfies the relation of tPhC



    /neff), where λ

    denotes a lasing wavelength, and neff denotes an effective refractive index of the resonant mode; and

    the thickness tsemi of the semiconductor layer satisfies the relation of 0.25×



    /neff)≦

    tsemi

    1.25×



    /neff).

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