Nitride semiconductor laser
First Claim
1. A surface-emitting laser comprising:
- an active layer;
a two-dimensional photonic crystal layer having a resonant mode in an in-plane direction;
a semiconductor layer; and
an electrode in this order,wherein the two-dimensional photonic crystal layer contains p-type conductive InxGa1-xN (0≦
x≦
1) as a high-refractive-index medium,the semiconductor layer contains p-type conductive InyGa1-yN (0≦
y≦
1), andthe thickness tPhC of the two-dimensional photonic crystal layer satisfies the relation of tPhC≧
(λ
/neff), where λ
denotes a lasing wavelength, and neff denotes an effective refractive index of the resonant mode; and
the thickness tsemi of the semiconductor layer satisfies the relation of 0.25×
(λ
/neff)≦
tsemi≦
1.25×
(λ
/neff).
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Abstract
A nitride semiconductor surface-emitting laser includes a two-dimensional photonic crystal layer having a resonant mode in an in-plane direction. The surface-emitting laser includes an active layer, the two-dimensional photonic crystal layer, a semiconductor layer, and an electrode in this order. The two-dimensional photonic crystal layer contains p-type conductive InxGa1-xN (0≦x≦1) as a high-refractive-index medium. The semiconductor layer contains p-type conductive InyGa1-yN (0≦y≦1). The thickness tPhC of the two-dimensional photonic crystal layer satisfies the relation of tPhC≧(λ/neff), wherein λ denotes the lasing wavelength, and neff denotes the effective refractive index of the resonant mode.
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Citations
4 Claims
-
1. A surface-emitting laser comprising:
-
an active layer;
a two-dimensional photonic crystal layer having a resonant mode in an in-plane direction;
a semiconductor layer; and
an electrode in this order,wherein the two-dimensional photonic crystal layer contains p-type conductive InxGa1-xN (0≦
x≦
1) as a high-refractive-index medium,the semiconductor layer contains p-type conductive InyGa1-yN (0≦
y≦
1), andthe thickness tPhC of the two-dimensional photonic crystal layer satisfies the relation of tPhC≧
(λ
/neff), where λ
denotes a lasing wavelength, and neff denotes an effective refractive index of the resonant mode; andthe thickness tsemi of the semiconductor layer satisfies the relation of 0.25×
(λ
/neff)≦
tsemi≦
1.25×
(λ
/neff). - View Dependent Claims (2, 3, 4)
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Specification