Reducing optical loss in an optical modulator using depletion region

• US 8,737,772 B2
• Filed: 02/19/2010
• Issued: 05/27/2014
• Est. Priority Date: 02/19/2010
• Status: Active Grant

• Current Assignee: Mellanox Technologies, Inc. (NVIDIA Corporation)
• Original Assignee: Kotura, Inc. (NVIDIA Corporation)
• Inventors: Dong, Po, Feng, Dazeng, Liao, Shirong, Asghari, Mehdi
• Primary Examiner(s): Lepisto, Ryan
• Assistant Examiner(s): Chiem, Erin
• Application Number:
  US12/660,149
• Publication Number:
  US 20110206313A1
• Time in Patent Office: 1,558 Days
• Field of Search: 385/2
• US Class Current: 385/2
• CPC Class Codes: G02F 1/025 in an optical waveguide structure G02F1/017, G02F1/2257 take precedence
• CPC Class Codes: G02F 2201/063 ridge; rib; strip loaded
• CPC Class Codes: G02F 2201/12 electrode

Abstract

An optical device includes a light-transmitting medium positioned on a base. The light-transmitting medium includes a slab region and a ridge extending upward from the slab region. The ridge defines a portion of an optical waveguide on the device. A modulator is also positioned on the base. The modulator includes a first doped region of the light-transmitting medium and a second doped region of the light-transmitting medium. The first doped region and the second doped region are configured such that a depletion region forms in the waveguide when an electrical bias is not applied to the modulator. At least a portion of the first doped region is positioned in the ridge and at least a portion of the second doped region is positioned in the slab region. The light-transmitting medium includes a first electrical pathway extending from a first location to the first doped region. The first location is on top of the light-transmitting medium and is spaced apart from the ridge.

Claims

1. An optical device, comprising:

a light-transmitting medium positioned on a base, the light-transmitting medium including a slab region and a ridge extending upward from the slab region, the ridge defining a portion of an optical waveguide on the device; and

a modulator positioned on the base, the modulator including a first doped region of the light-transmitting medium and a second doped region of the light-transmitting medium,

when the first doped region includes an n-type dopant the second doped region includes a p-type dopant and when the first doped region includes the p-type dopant the second doped region includes the n-type dopant,

at least a portion of the first doped region being positioned in the ridge and between the second doped region and a top of the ridge, and at least a portion of the second doped region being positioned in the slab region, and none of the second doped region being located between the first doped region and the top of the ridge, and

the light-transmitting medium including a first electrical pathway extending from a first location to the first doped region, the first location being on top of the light-transmitting medium and spaced apart from the ridge.

2. The device of claim 1, wherein the light-transmitting medium includes a second electrical pathway extending from a second location to the second doped region, the second location being on top of the light-transmitting medium and spaced apart from the ridge.

3. The device of claim 1, wherein the first doped region contacts the second doped region.

4. The device of claim 3, wherein the contact between the first doped region and the second doped region defines an interface and at least a portion of a length of the interface is located in the slab region.

5. The device of claim 4, wherein at least a portion of the interface is horizontal relative to the base.

6. The device of claim 1, wherein the light-transmitting medium includes a first conducting doped region that contacts the first doped region and also the top of the light-transmitting medium, the first conducting doped region serving as the first electrical pathway.

7. The device of claim 6, wherein no portion of the first conducting doped region is located under the ridge.

8. The device of claim 7, wherein when the first doped region includes the n-type dopant, the first conducting doped region includes the n-type dopant and when the first doped region includes the p-type dopant, the first conducting doped region includes the p-type dopant.

9. The device of claim 8, wherein a concentration of the dopant in the first conducting doped region is higher than a concentration of the dopant in the first doped region.

10. The device of claim 8, wherein the light-transmitting medium includes a second conducting doped region that contacts the second doped region and also the top of the light-transmitting medium, the second conducting doped region conducting electrical current between the second doped region and the top of the light-transmitting medium.

11. The device of claim 10, wherein no portion of the second conducting doped region is located under the ridge.

12. The device of claim 11, wherein when the second doped region includes the n-type dopant, the second conducting doped region includes the n-type dopant and when the second doped region includes the p-type dopant, the second conducting doped region includes the p-type dopant.

13. The device of claim 12, wherein a concentration of the dopant in the second conducting doped region is higher than a concentration of the dopant in the second doped region.

14. The device of claim 1, wherein the first doped region contacts the second doped region so as to form an interface and at least a portion of the interface is located in the ridge.

15. The device of claim 14, wherein a portion of the first doped region is located in the slab region.

16. The device of claim 3, wherein the light-transmitting medium includes a first conducting doped region that contacts the first doped region and also the top of the light-transmitting medium, the first conducting doped region serving as the first electrical pathway.

17. The device of claim 16, wherein no portion of the first conducting doped region is located under the ridge.

18. The device of claim 17, wherein when the first doped region includes the n-type dopant, the first conducting doped region includes the n-type dopant and when the first doped region includes the p-type dopant, the first conducting doped region includes the p-type dopant.

19. The device of claim 18, wherein a concentration of the dopant in the first conducting doped region is higher than a concentration of the dopant in the first doped region.

20. The device of claim 14, wherein the light-transmitting medium includes a first conducting doped region that contacts the first doped region and also the top of the light-transmitting medium, the first conducting doped region serving as the first electrical pathway.