Independent link and bank selection

• US 8,738,879 B2
• Filed: 09/10/2012
• Issued: 05/27/2014
• Est. Priority Date: 09/30/2005
• Status: Active Grant

• Current Assignee: Mosaid Technologies Incorporated (MOSAID Technologies Inc. (f/k/a Conversant Intellectual Property Management))
• Original Assignee: MOSAID Technologies Inc. (f/k/a Conversant Intellectual Property Management)
• Inventors: Pyeon, Hong Beom, Oh, Hakjune, Kim, Jin-Ki
• Primary Examiner(s): NGUYEN, HIEP T
• Application Number:
  US13/608,605
• Publication Number:
  US 20130003470A1
• Time in Patent Office: 624 Days
• US Class Current: 711/168
• CPC Class Codes: G06F 13/4022 using switching circuits, e.g. switching matrix, connection or expansion network G06F13/4009 takes precedence
• CPC Class Codes: G11C 11/408 Address circuits
• CPC Class Codes: G11C 7/1048 Data bus control circuits, e.g. precharging, presetting, equalising
• CPC Class Codes: G11C 7/18 Bit line organisation; Bit line lay-out

Abstract

Provided is a memory system that has a plurality of memory banks and a plurality of link controllers. For each memory bank, there is first switching logic for receiving output for each link controller, and for passing on the output of only one of the link controllers to the memory bank. For each link controller, there is second switching logic for receiving an output of each memory bank, and for passing on the output of only one of the memory banks to the link controller. According to an embodiment of the invention, there is switch controller logic for controlling operation of both the first switching logic and the second switching logic to prevent simultaneous or overlapping access by multiple link controllers to the same memory bank, and for preventing simultaneous or overlapping access to multiple banks by the same link controller.

Claims

1. A memory device comprising:

a first link and a second link;

a first bank and a second bank;

switching circuitry configured to switch data between the first bank, the second bank, the first link, and the second link, the switching circuitry comprising;

a first switching logic circuit comprising;

a first input for receiving a data input from the first link;

a second input for receiving an enable for writing for the first link;

a third input for receiving a data input from the second link;

a fourth input for receiving an enable for writing for the second link;

an output for outputting data to a memory bank.

2. The memory device of claim 1 further comprising:

a second switching logic circuit comprising;

a first input for receiving a data input from the first bank;

a second input for receiving an enable for reading from the first bank;

a third input for receiving a data input from the second bank;

a fourth input for receiving an enable for reading from the second bank;

an output for outputting data read from the first or second bank.

3. The memory device of claim 1 wherein the first switching logic circuit comprises:

a first NAND gate connected to the first input of the first switching logic circuit for receiving data from the first link and the second input of the first switching logic circuit for receiving the enable for writing for the first link;

a second NAND gate connected to the third input of the first switching logic circuit for receiving data from the second link and the fourth input of the first switching logic circuit for receiving the enable for writing for the second link;

a third NAND gate connected to an output of the first NAND gate and an output of the second NAND gate to produce the output of the first switching logic circuit.

4. The memory device of claim 2 wherein the second switching logic circuit comprises:

a first NAND gate connected to the first input of the second switching logic circuit for receiving data from the first bank and the second input of the second switching logic circuit for receiving the enable for reading from the first bank;

a second NAND gate connected to the third input of the second switching logic circuit for receiving data from the second bank and the fourth input of the second switching logic circuit for receiving the enable for reading from the second bank;

a third NAND gate connected to an output of the first NAND gate and an output of the second NAND gate to produce the output of the second switching logic circuit.

5. The memory device of claim 3 further comprising:

a second switching logic circuit comprising;

a first input for receiving a data input from the first bank;

a second input for receiving an enable for reading from the first bank;

a third input for receiving a data input from the second bank;

a fourth input for receiving an enable for reading from the second bank;

an output for outputting data read from the first or second bank;

wherein the second switching logic circuit comprises;

a fourth NAND gate connected to the first input of the second switching logic circuit for receiving data from the first bank and the second input of the second switching logic circuit for receiving the enable for reading from the first bank;

a fifth NAND gate connected to the third input of the second switching logic circuit for receiving data from the second bank and the fourth input of the second switching logic circuit for receiving the enable for reading from the second bank;

a sixth NAND gate connected to an output of the first NAND gate and an output of the second NAND gate to produce the output of the second switching logic circuit.

6. The memory device of claim 1 comprising:

a first plurality of said first switching logic circuits, each being configured to receive respective data from the first link, the enable for writing for the first link, respective data from the second link, and the enable for writing for the second link; and

each of the first plurality of said first switching logic circuits having a respective output for outputting data to the first bank.

7. The memory device of claim 1 comprising:

a plurality of said first switching logic circuits, each being configured to receive respective data from the first link, the enable for writing for the first link, respective data from the second link, and the enable for writing for the second link, and each having a respective output for outputting data to the second bank.

8. The memory device of claim 6 further comprising:

a second plurality of said first switching logic circuits each receiving respective data from the first link, the enable for writing for the first link, respective data from the second link, and the enable for writing for the second link, and each having a respective output for outputting data to the second bank.

9. The memory device of claim 2 comprising two of said second switching logic circuits wherein the output of a first of the two second switching logic circuits is for the first link, and the output of a second of the two second switching logic circuits is for the second link.

10. The memory device of claim 1 wherein each link comprises:

an input buffer configured to receive incoming command and data via at least one input of the link controller;

a converter configured to convert incoming command and data to parallel form; and

a command interpreter configured to interpret incoming commands.

11. The memory device of claim 2 comprising:

a first plurality of said first switching logic circuits each receiving respective data from the first link, the enable for writing for the first link, respective data from the second link, and the enable for writing for the second link, and each having a respective output for outputting data to the first bank;

a second plurality of said first switching logic circuits each receiving respective data from the first link, the enable for writing for the first link, respective data from the second link, and the enable for writing for the second link, and each having a respective output for outputting data to the second bank;

two of said second switching logic circuits wherein the output of a first of the two second switching logic circuits is for the first link, and the output of a second of the two second switching logic circuits is for the second link.

12. A memory device comprising:

a first link and a second link;

a first bank and a second bank;

switching circuitry configured to switch data between the first bank, the second bank, the first link, and the second link, the switching circuitry comprising;

a switching logic circuit comprising;

a first input for receiving a data input from the first bank;

a second input for receiving an enable for reading from the first bank;

a third input for receiving a data input from the second bank;

a fourth input for receiving an enable for reading from the second bank;

an output for outputting data read from the first or second bank.

13. The memory device of claim 12 wherein the switching logic circuit comprises:

a first NAND gate connected to the first input of the switching logic circuit for receiving data from the first bank and the second input of the switching logic circuit for receiving the enable for reading from the first bank;

a second NAND gate connected to the third input of the switching logic circuit for receiving data from the second bank and the fourth input of the switching logic circuit for receiving the enable for reading from the second bank;

a third NAND gate connected to an output of the first NAND gate and an output of the second NAND gate to produce the output of the switching logic circuit.

14. The memory device of claim 12 comprising two of said switching logic circuits wherein the output of a first of the two switching logic circuits is for the first link, and the output of a second of the two switching logic circuits is for the second link.

15. The memory device of claim 12 wherein each link comprises:

an input buffer configured to receive incoming command and data via at least one input of the link controller;

a converter configured to convert incoming command and data to parallel form; and

a command interpreter configured to interpret incoming commands.