Metallic surface enhancement

• US 8,741,390 B2
• Filed: 04/18/2008
• Issued: 06/03/2014
• Est. Priority Date: 04/18/2007
• Status: Active Grant

• Current Assignee: MacDermid Enthone Inc. (Element Solutions Inc)
• Original Assignee: Enthone Incorporated (Element Solutions Inc)
• Inventors: Abys, Joseph A., Sun, Shenliang, Fan, Chonglun, Kudrak, Edward J. Jr., Wang, Cai
• Primary Examiner(s): FLETCHER III, WILLIAM P
• Application Number:
  US12/596,559
• Publication Number:
  US 20100151263A1
• Time in Patent Office: 2,237 Days
• Field of Search: 427/407.1, 427/402, 427/409, 427/430.1, 427/435, 427/436, 427/437, 106/14.05, 106/14.12, 106/14.13, 106/14.15, 106/14.16, 106/14.18, 106/14.41, 106/14.42, 106/14.44
• US Class Current: 427/409
• CPC Class Codes: C23C 22/03 containing phosphorus compounds
• CPC Class Codes: C23F 11/10 using organic inhibitors
• CPC Class Codes: C23F 11/149 Heterocyclic compounds containing nitrogen as hetero atom
• CPC Class Codes: H05K 2203/124 Heterocyclic organic compounds, e.g. azole, furan
• CPC Class Codes: H05K 3/282 for inhibiting the corrosion of the circuit, e.g. for preserving the solderability
• CPC Class Codes: Y10T 428/12611 Oxide-containing component
• CPC Class Codes: Y10T 428/12903 Cu-base component
• CPC Class Codes: Y10T 428/26 Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
• CPC Class Codes: Y10T 428/31678 Of metal

Abstract

A method and composition for enhancing corrosion resistance, wear resistance, and contact resistance of a device comprising a copper or copper alloy substrate and at least one metal-based layer on a surface of the substrate. The composition comprises a phosphorus oxide compound selected from the group consisting of a phosphonic acid, a phosphonate salt, a phosphonate ester, a phosphoric acid, a phosphate salt, a phosphate ester, and mixtures thereof; an organic compound comprising a nitrogen-containing functional group; and a solvent having a surface tension less than about 50 dynes/cm as measured at 25° C.

Claims

1. A method for enhancing the corrosion resistance, wear resistance, and contact resistance of a device comprising a copper or copper alloy substrate and having a metal layer comprising a base metal on a surface of the substrate, the method comprising:

exposing the device to the composition comprising;

a phosphorus oxide compound selected from the group consisting of a phosphonic acid, a phosphonate salt, a phosphonate ester, and mixtures thereof;

an organic compound comprising a nitrogen-containing functional group selected from the group consisting of amine, aromatic heterocycle comprising nitrogen, and a combination thereof; and

a solvent having a surface tension less than about 50 dynes/cm as measured at 25°

C. wherein the solvent comprises water and a surfactant.

2. The method of claim 1 wherein the phosphorus oxide compound has the structure (I):

3. The method of claim 2 wherein the phosphorus oxide compound is selected from the group consisting of methylphosphonic acid, dimethylphosphinic acid, ethylphosphonic acid, n-propylphosphonic acid, isopropylphosphonic acid, n-butylphosphonic acid, iso-butylphosphonic acid, tert-butylphosphonic acid, pentylphosphonic acids, hexylphosphonic acids, heptylphosphonic acids, n-octylphosphonic acid, n-decyl phosphonic acid, n-dodecyl phosphonic acid, (12-Phosphonododecyl)phosphonic acid, n-tetradecyl phosphonic acid, n-hexadecyl phosphonic acid, n-octadecyl phosphonic acid, diisooctylphosphinic acid, salts thereof, esters thereof, and combinations thereof.

4. The method of claim 2 wherein the phosphorus oxide compound is selected from the group consisting of vinylphosphonic acid, allylphosphonic acid, phenyl phosphonic acid, diphenylphosphinic acid, (2-isopropylphenyl)phosphonic acid, benzyl phosphonic acid, (ortho-tolyl)phosphonic acid, (meta-tolyl)phosphonic acid, (para-tolyl)phosphonic acid, (4-ethylphenyl)phosphonic acid, (2,3-xylyl)phosphonic acid, (2,4-xylyl)phosphonic acid, (2,5-xylyl)phosphonic acid, (3,4-xylyl)phosphonic acid, (3,5-xylyl)phosphonic acid, and combinations thereof.

5. The method of claim 1 wherein the organic compound comprising a nitrogen-containing functional group is the amine and has the structure (III):

6. The method of claim 5 wherein the amine is a primary amine selected from the group consisting of aminoethane, 1-aminopropane, 2-aminopropane, 1-aminobutane, 2-aminobutane, 1-amino-2-methylpropane, 2-amino-2-methylpropane, 1-aminopentane, 2-aminopentane, 3-aminopentane, neo-pentylamine, 1-aminohexane, 1-aminoheptane, 2-aminoheptane, 1-aminooctane, 2-aminooctane, 1-aminononane, 1-aminodecane, 1-aminododecane, 1-aminotridecane, 1-aminotetradecane, 1-aminopentadecane, 1-aminohexadecane, 1-aminoheptadecane, 1-aminooctadecane, and combinations thereof.

7. The method of claim 5 wherein the amine is a secondary amine selected from the group consisting of diethylamine, dipropylamines, dibutylamines, dipentylamines, dihexylamines, diheptylamines, dioctylamines, dinonylamines, didecylamines, diundecylamines, didodecylamines, ditridecylamines, ditetradecylamines, dihexadecylamines, dioctadecylamines, and combinations thereof.

8. The method of claim 5 wherein the amine is a tertiary amine selected from the group consisting of triethylamine, tripropylamines, tributylamines, tripentylamine, trihexylamines, triheptylamines, trioctylamines, trinonylamines, tridecylamines, triundecylamines, tridodecylamines, tritridecylamines, tritetradecylamines, trihexadecylamines, trioctadecylamines, and combinations thereof.

9. The method of claim 5 wherein the amine is a selected from the group consisting of ethylenediamine, 2-(Diisopropylamino)ethylamine, N,N′

-Diethylethylenediamine, N-Isopropylethylenediamine, N-Methylethylenediamine, N,N-Dimethylethylenediamine, 1-dimethylamino-2-propylamine, 3-(Dibutylamino)propylamine, 3-(Diethylamino)propylamine, 3-(Dimethylamino)-1-propylamine, 3-(Methylamino)propylamine, N-Methyl-1,3-diaminopropane, N,N-Diethyl-1,3-propanediamine, and others.

10. The method of claim 1 wherein the organic compound comprising a nitrogen-containing functional group is the aromatic heterocycle comprising nitrogen and has the following structure (IV):

11. The method of claim 10 wherein the aromatic heterocycle comprising nitrogen is selected from the group consisting of pyrrole (1H-azole);

imidazole (1,3-diazole);

pyrazole (1,2-diazole);

1,2,3-triazole;

1,2,4-triazole;

tetrazole;

isoindole;

benzimidazole (1,3-benzodiazole);

indazole (1,2-benzodiazole);

1H-benzotriazole;

2H-benzotriazole;

imidazo[4,5-b]pyridine;

indole (1H-Benzo[b]pyrrole);

purine (7H-Imidazo(4,5-d)pyrimidine);

pyrazolo[3,4-d]pyrimidine;

Triazolo[4,5-d]pyrimidine;

derivatives thereof, and combinations thereof.

12. The method of claim 10 wherein the aromatic heterocycle comprising nitrogen is selected from the group consisting of imidazole (1,3-diazole), benzimidazole (1,3-benzodiazole), 1H-benzotriazole, and 2H-benzotriazole.

13. The method of claim 1 wherein a concentration of the phosphorus oxide compound is between about 0.1% by weight and about 5% by weight and a concentration of the aromatic heterocycle comprising nitrogen is between about 0.1% by weight and about 1.0% by weight.

14. The method of claim 1 wherein the solvent has a surface tension less than about 40 dynes/cm as measured at 25°

C.

15. The method of claim 1 wherein the surfactant comprises a polyether, an ethoxylated glycerol ester, a sulfate ester, and combinations thereof.

16. The method of claim 1 wherein the composition further comprises a thiol having the following general structure (V):

R₁—

S—

H 

 

Structure (V)

wherein R₁ is a hydrocarbyl having from one carbon atom to about 24 carbon atoms, an aryl having from about five to about fourteen carbon atoms, or an arylhydrocarbyl wherein the hydrocarbyl has from one carbon atom to about 24 carbon atoms and the aryl has from about five to about fourteen carbon atoms.

17. The method of claim 16 wherein R₁ is the hydrocarbyl and the thiol is selected from the group consisting of ethanethiol;

1-propanethiol;

2-propanethiol;

2-propene-1-thiol;

1-butanethiol;

2-butanethiol;

2-methyl-1-propanethiol;

2-methyl-2-propanethiol;

2-methyl-1-butanethiol;

1-pentanethiol;

2,2-dimethyl-1-propanethiol;

1-hexanethiol;

1,6-hexanedithiol;

1-heptanethiol;

2-ethylhexanethiol;

1-octanethiol;

1,8-octanedithiol;

1-nonanethiol;

1,9-nonanedithiol;

1-decanethiol;

1-adamantanethiol;

1,11-undecanedithiol;

1-undecanethiol;

1-dodecanethiol;

tert-dodecylmercaptan;

1-tridecanethiol;

1-tetradecanethiol;

1-pentadecanethiol;

1-hexadecanethiol;

1-heptadecanethiol;

1-octadecanethiol;

1-nonadecanethiol;

1-icosanethiol; and

combinations thereof.

18. The method of claim 16 wherein the R₁ comprises the aryl or the arylhydrocarbyl and the thiol is selected from the group consisting of benzenethiol;

2-methylbenzenethiol;

3-methylbenzenethiol;

4-methylbenzenethiol;

2-ethylbenzenethiol;

3-ethylbenzenethiol;

4-ethylbenzenethiol;

2-propylbenzenethiol;

3-propylbenzenethiol;

4-propylbenzenethiol;

2-tert-butylbenzenethiol;

4-tert-butylbenzenethiol;

4-pentylbenzenethiol;

4-hexylbenzenethiol;

4-heptylbenzenethiol;

4-octylbenzenethiol;

4-nonylbenzenethiol;

4-decylbenzenethiol;

benzyl mercaptan;

2,4-xylenethiol, furfuryl mercaptan;

1-naphthalenethiol;

2-naphthalenethiol;

4,4′

-dimercaptobiphenyl; and

combinations thereof.

19. The method of claim 1 wherein the organic compound comprising a nitrogen-containing functional group further comprises a sulfur-containing functional group.

20. The method of claim 19 wherein the organic compound comprises a hydrocarbyl linking group that links the nitrogen-containing functional group and a thiol through a hydrocarbyl chain and has a general structure (VII):

21. The method of claim 1 wherein the solvent comprises 2-butoxyethanol.

22. The method of claim 1 wherein said metal layer on the surface of the substrate comprises a base metal selected from the group consisting of nickel, tin, zinc, chromium, titanium, aluminum, tantalum, zirconium, hafnium, molybdenum, tungsten, and alloys thereof.

23. The method of claim 22 wherein the said metal layer comprising the base metal is deposited on the copper or copper alloy substrate by immersion deposition.

24. The method of claim 22 wherein the solvent comprises 2-butoxyethanol.

25. The method of claim 1 wherein said base metal is selected from the group consisting of nickel, tin, zinc, chromium, titanium, aluminum, tantalum, zirconium, hafnium, molybdenum, tungsten, and alloys thereof;

and

said device further comprises a layer comprising a precious metal over said layer comprising a base metal, said precious metal being selected from the group consisting of gold, silver, platinum, palladium, and alloys thereof.

26. The method of claim 25 wherein said base metal comprises nickel, tin, or a combination thereof.

27. The method of claim 26 wherein said precious metal is selected from the group consisting of gold, silver, and palladium.

28. The method of claim 27 wherein said base metal comprises nickel and said precious metal comprises gold or silver.

29. The method of claim 27 wherein said base metal comprises tin and said precious metal comprises silver.

30. The method of claim 27 wherein said base metal comprises nickel and said precious metal comprises gold.

31. The method of claim 1 wherein said base metal comprises tin.

32. The method of claim 31 wherein the tin is deposited on the copper or copper alloy substrate by immersion deposition.

33. The method of claim 31 wherein the solvent comprises 2-butoxyethanol.

34. The method of claim 1 wherein said metal layer comprising a base metal comprises an alloy of tin selected from the group consisting of tin-lead, tin-copper, tin-silver, tin-silver-copper, tin-silver-copper antimony, tin-zinc, tin-zinc-bismuth, tin-antimony, tin-indium-silver-bismuth, tin-bismuth-silver, tin-bismuth, and tin-indium.

35. The method of claim 1 wherein said base metal comprises nickel.

36. The method of claim 1 wherein said base metal layer comprises pores and said phosphorus oxide compound forms a protective organic film over exposed surfaces of the base metal layer and within the pores thereof.

37. The method of claim 36 wherein said phosphorus oxide reacts with base metal oxide on exposed surfaces of the base metal layer and/or the pores thereof.

38. The method of claim 37 wherein said device further comprises a porous layer comprising a precious metal over said layer comprising a base metal, said precious metal being selected from the group consisting of gold, silver, platinum, palladium, and alloys thereof, said phosphorus oxide compound further filling in the pores in the precious metal layer.

39. A method as set forth in claim 1 wherein said phosphorus oxide compound is selected from the group consisting of methylene diphosphonic acid, phosphonoacetic acid, 3-phosphonopropionic acid, 6-phosphonohexanoic acid, 11-phosphonoundecanoic acid, 16-phosphonohexadecanoic acid, salts thereof, and esters thereof, and combinations thereof.