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Gate electrodes for millimeter-wave operation and methods of fabrication

  • US 8,741,715 B2
  • Filed: 04/29/2009
  • Issued: 06/03/2014
  • Est. Priority Date: 04/29/2009
  • Status: Active Grant
First Claim
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1. A method of fabricating a gate electrode on a semiconductor structure, comprising:

  • depositing a resist layer that comprises an inner layer, a middle layer, and an outer layer on said semiconductor structure, said inner layer being the closest of any resist layers to said semiconductor structure and comprising a resist material different from the material of said middle layer, and said outer layer comprising a resist material different from the material of said middle layer;

    removing selected portions of said resist layer in sequence starting with said outer layer, wherein a portion of said inner layer is removed such that a remaining portion of said inner layer defines sidewalls generally curving inward as they approach said semiconductor structure; and

    depositing a conductive material in a space left after said removal of selected portions.

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