Method of fabrication of a semiconductor apparatus comprising substrates including Al/Ge and Cu contact layers to form a metallic alloy
First Claim
Patent Images
1. A method of fabricating a semiconductor apparatus comprising:
- providing a first silicon substrate having a first contact, wherein the first contact comprises a Ge layer interposed between the substrate and an Al layer;
providing a second silicon substrate having a second contact, wherein the second contact comprises a Cu layer as an outmost layer;
placing the first contact in contact with the second contact; and
heating the first and second contacts to form a metallic alloy, wherein the heating is performed at a temperature of about 420°
to 500°
C. and under a compressive force of about 45 to 55 kN.
1 Assignment
0 Petitions
Accused Products
Abstract
The disclosure relates to integrated circuit fabrication, and more particularly to a semiconductor apparatus with a metallic alloy. An exemplary structure for an apparatus comprises a first silicon substrate; a second silicon substrate; and a contact connecting each of the first and second substrates, wherein the contact comprises a Ge layer adjacent to the first silicon substrate, a Cu layer adjacent to the second silicon substrate, and a metallic alloy between the Ge layer and Cu layer.
9 Citations
19 Claims
-
1. A method of fabricating a semiconductor apparatus comprising:
-
providing a first silicon substrate having a first contact, wherein the first contact comprises a Ge layer interposed between the substrate and an Al layer; providing a second silicon substrate having a second contact, wherein the second contact comprises a Cu layer as an outmost layer; placing the first contact in contact with the second contact; and heating the first and second contacts to form a metallic alloy, wherein the heating is performed at a temperature of about 420°
to 500°
C. and under a compressive force of about 45 to 55 kN. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A method of fabricating a semiconductor apparatus comprising:
-
forming a first contact over a first substrate, the first contact comprising Al and Ge that entirely cover a raised portion of the first substrate, wherein the forming the first contact comprises; forming a Ge layer over the first substrate; and forming an Al-containing layer over the Ge layer; forming a second contact over a second substrate, the second contact comprising a Cu-containing layer; placing the first contact in contact with the second contact; and heating the first and second contacts to form a metallic alloy structure, wherein the heating is performed in a chamber at a temperature within a range from about 420°
C. to 500°
C. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
-
-
18. A method of fabricating a semiconductor apparatus comprising:
-
forming a first contact over a first substrate, the first contact comprising an Al-containing layer and a Ge layer between the Al-containing layer and the first substrate; forming a second contact over a second substrate, the second contact comprising a Cu-containing layer; placing the first contact in contact with the second contact; and heating the first and second contacts to form a metallic alloy structure, wherein the heating is performed at a temperature that is greater than a eutectic temperature of Ge and Al and less than a eutectic temperature of Cu and Al. - View Dependent Claims (19)
-
Specification