Radiation sensor and dosimeter

• US 8,742,357 B2
• Filed: 06/02/2008
• Issued: 06/03/2014
• Est. Priority Date: 06/04/2007
• Status: Active Grant

• Current Assignee: Electrogenics Laboratories Limited
• Original Assignee: University Of Wollongong
• Inventors: Rozenfeld, Anatoly
• Primary Examiner(s): Porta, David
• Assistant Examiner(s): VU, MINDY D
• Application Number:
  US12/602,195
• Publication Number:
  US 20100164534A1
• Time in Patent Office: 2,192 Days
• Field of Search: 250/370.07
• US Class Current: 250/370.07
• CPC Class Codes: G01T 1/026 Semiconductor dose-rate meters

Abstract

A semiconductor radiation sensor (100), comprising a substrate (102), a carrier material (104) mounted to the substrate (102), and a semiconductor detector (106) mounted to the carrier material (104). A radiation sensitive portion of the semiconductor detector (106) is oriented towards the carrier material (104) and generally away from the substrate (102), and the carrier material is adapted to transmit radiation to the radiation sensitive portion of the semiconductor detector (106). A dosimeter comprising the radiation sensor (100) and a method of manufacturing the radiation sensor (100) are also provided.

Claims

1. A semiconductor radiation sensor, comprising:

a substrate;

a carrier material mounted to said substrate;

conducting leads mounted on a first side of said carrier material; and

a semiconductor detector electrically coupled to the conducting leads and mounted to a second side of said carrier material, such that the substrate and the semiconductor detector are located on the second side of the carrier material;

wherein the substrate has an aperture or recess, the semiconductor detector protrudes at least partially into the aperture or recess, a radiation sensitive portion of said semiconductor detector is oriented towards said second side of the carrier material, and said carrier material is adapted to transmit radiation of interest to said radiation sensitive portion of said semiconductor detector.

2. A sensor as claimed in claim 1, wherein said sensor is adapted for use within a narrow catheter or a body cavity or on a body surface, for monitoring radiation dose or dose rate in vivo.

3. A sensor as claimed in claim 1, wherein said sensor is adapted for physical or wireless data connection to an electronic data collector.

4. A sensor as claimed in claim 1, wherein said carrier material comprises a flexible polymeric material.

5. A sensor as claimed in claim 1, wherein said carrier material comprises a polyamide.

6. A sensor as claimed in claim 1, wherein a rear portion of said semiconductor detector is covered with an epoxy or other tissue equivalent material.

7. A sensor as claimed in claim 1, wherein said carrier material provided with said conducting leads and semiconductor detector are coated at least partially with a polyamide or other polymeric material.

8. A sensor as claimed in claim 1, wherein said semiconductor detector comprises a planar diode or MOSFET die.

15. A dosimeter comprising a radiation sensor as claimed in claims 1 or 11.

9. A sensor as claimed in 1, wherein the conducting leads are connected to contact pads of the semiconductor detector through apertures in the carrier material such that the conducting leads do not overlay the radiation sensitive portion of the semiconductor detector.

10. A sensor as claimed in 1, wherein the carrier material is a tissue equivalent material.

11. A radiation sensor, comprising:

a semiconductor detector carrier material;

conducting leads mounted on a first side of said carrier material; and

a semiconductor detector electrically coupled to the conducting leads and mounted to a second side of said carrier material with a radiation sensitive portion of said semiconductor detector oriented towards said carrier material;

wherein said carrier material is adapted to be mounted to a substrate with said substrate located on the second side of the carrier material and with said semiconductor detector protruding at least partially into an aperture or recess in said substrate, and said carrier material is adapted to transmit radiation of interest to said radiation sensitive portion of said semiconductor detector.

12. A sensor as claimed in claim 11, wherein said semiconductor detector carrier comprises a flexible polymeric material.

13. A sensor as claimed in claim 11, wherein said semiconductor detector carrier provided with said conducting leads and said semiconductor detector are coated at least partially with a polyamide or other polymeric material.

14. A sensor as claimed in claim 11, wherein said semiconductor detector comprises a planar diode or MOSFET die.

16. A sensor as claimed in 11, wherein the conducting leads are connected to contact pads of the semiconductor detector through apertures in the carrier material such that the conducting leads do not overlay the radiation sensitive portion of the semiconductor detector.

17. A sensor as claimed in 11, wherein the carrier material is a tissue equivalent material.

18. A method of manufacturing a radiation sensor, comprising:

mounting conducting leads on a first side of a carrier material;

mounting a semiconductor detector to a second side of the carrier material with a radiation sensitive portion of said semiconductor detector oriented towards said carrier material, said carrier material being adapted to transmit radiation of interest to said radiation sensitive portion of said semiconductor detector;

electrically coupling the semiconductor detector to the conducting leads; and

mounting said carrier material on a substrate that has an aperture or recess, such that said semiconductor detector protrudes at least partially into said aperture or recess and the substrate is located on the second side of said carrier material.

19. A method as claimed in claim 18, including forming said carrier material from a flexible polymeric material.

20. A method as claimed in claim 18, including coating said carrier material provided with said conducting leads and semiconductor detector at least partially with a polyamide or other polymeric material.

21. A method as claimed in claim 18, wherein said semiconductor detector comprises a planar diode or MOSFET die.

22. A method as claimed in 18, including connecting the conducting leads to contact pads of the semiconductor detector through apertures in the carrier material such that the conducting leads do not overlay the radiation sensitive portion of the semiconductor detector.

23. A method as claimed in 18, wherein the carrier material is a tissue equivalent material.