Thin film transistor using an oxide semiconductor and display

• US 8,742,412 B2
• Filed: 01/30/2009
• Issued: 06/03/2014
• Est. Priority Date: 01/31/2008
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Goyal, Amita, Itagaki, Naho, Iwasaki, Tatsuya
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): JEFFERSON, QUOVAUNDA
• Application Number:
  US12/809,096
• Publication Number:
  US 20110175081A1
• Time in Patent Office: 1,950 Days
• Field of Search: 257/43, 257/52, 257/53, 257/55, 257/57, 257/61, 257/63, 257/210, 257/E33.004, 257/E31.034, 257/E31.047, 257/E29.101, 257/E21.297, 257/59, 257/213, 257/E21.412, 257/E33.001, 257/E33.037, 257/E29.079, 257/E29.08, 257/E29.2, 257/89, 257/E29.289, 438/22, 438/45, 438/46, 438/148, 438/151, 438/162, 438/237, 438/482, 438/608, 438/930, 438/FOR.184, 438/FOR.206
• US Class Current: 257/43
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A thin film transistor includes a gate electrode, a gate insulation layer, a channel layer, a source electrode, and a drain electrode formed on a substrate, in which: the channel layer contains indium, germanium, and oxygen; and the channel layer has a compositional ratio expressed by In/(In+Ge) of 0.5 or more and 0.97 or less.

Claims

1. A thin film transistor comprising:

a substrate;

a gate electrode;

a gate insulation layer;

a channel layer;

a source electrode; and

a drain electrode,

said gate electrode, gate insulation layer, channel layer, source electrode and drain electrode being formed on said substrate,

wherein said channel layer is amorphous, and the elements present in greatest amounts in said channel layer are indium, germanium, and oxygen;

wherein said channel layer has a compositional ratio expressed by In/(In+Ge) of 0.5-0.75, and

wherein said thin film transistor has an S value that is less than 0.55V/dec.

2. A thin film transistor according to claim 1, wherein said channel layer has a compositional ratio expressed by In/(In+Ge) of 0.6-0.75.

3. A thin film transistor according to claim 1, wherein said channel layer has a specific resistivity of 10³ Ω

·

cm to 10⁶ Ω

·

cm.

4. A thin film transistor according to claim 1, wherein said gate insulation layer is made of a silicon oxide.

5. A display apparatus that comprises:

an organic light emitting diode; and

a thin film transistor that drives said organic light emitting diode,

said thin film transistor further comprising a substrate, a gate electrode, a gate insulation layer, a channel layer, a source electrode, and a drain electrode, wherein

said gate electrode, gate insulation layer, channel layer, source electrode and drain electrode are formed on said substrate,

said channel layer is amorphous, and the elements present in greatest amounts in said channel layer are indium, germanium, and oxygen;

said channel layer has a compositional ratio expressed by In/(In+Ge) of 0.5-0.75, and

said thin film transistor has an S value that is less than or equal to 0.55V/dec.

6. A display apparatus according to claim 5, wherein said channel layer has a compositional ratio expressed by In/(In+Ge) of 0.6-0.75.

7. A field effect transistor, comprising:

a source and a drain; and

a channel formed from an oxide that contains Zn, In, and Ge,

wherein said channel is amorphous, and the elements present in said channel in greatest amounts are zinc, indium, germanium, and oxygen,

wherein said oxide has a composition inside of a range surrounded by a, n, t, and h in FIG. 57,

and said field effect transistor has an S value less than or equal to 0.7 V/dec.

8. A field effect transistor according to claim 7, wherein said oxide is amorphous.

9. A field effect transistor according to claim 7, wherein said field effect transistor is incorporated in a display that includes an organic light emitting diode.

10. A field effect transistor according to claim 7, wherein said oxide has a composition inside of a range surrounded by h, i, n, and t in FIG. 57.

11. A field effect transistor according to claim 7, wherein said oxide has a composition inside of a range surrounded by s, u, x, y, v, and b in FIG. 57,

and said field effect transistor has an S value that is less than or equal to 0.5V/dec.

12. A field effect transistor according to claim 7, wherein said oxide has a composition inside of a range surrounded by s, u, t, and n in FIG. 57.

13. A field effect transistor according to claim 12, having an off-current of 10⁻

13 A or less.

14. A field effect transistor according to claim 7, further comprising a gate insulating film made of a silicon oxide.