Semiconductor device and manufacturing method thereof
First Claim
1. A semiconductor device comprising:
- a driver circuit in a driver circuit portion over an insulating surface and pixels in a pixel portion over the insulating surface;
the driver circuit comprising;
a first gate electrode layer over the insulating surface;
a gate insulating layer over the first gate electrode layer;
a first oxide semiconductor layer over the first gate electrode layer;
a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer; and
an oxide insulating layer over the first source electrode layer and the first drain electrode layer, wherein the oxide insulating layer is in contact with the first oxide semiconductor layer; and
one of the pixels comprising;
a second gate electrode layer over the insulating surface;
the gate insulating layer over the second gate electrode layer;
a second source electrode layer and a second drain electrode layer over the gate insulating layer;
a second oxide semiconductor layer over the second gate electrode layer over the second source electrode layer and the second drain electrode layer;
a first conductive layer over the second oxide semiconductor layer; and
the oxide insulating layer over the second oxide semiconductor layer and the first conductive layer, wherein the oxide insulating layer is in contact with the second oxide semiconductor layer,wherein the driver circuit is arranged around the pixel portion, andwherein each of the second gate electrode layer, the gate insulating layer, the second source electrode layer, the second drain electrode layer, and the second oxide semiconductor layer has a light-transmitting property.
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Accused Products
Abstract
The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.
155 Citations
21 Claims
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1. A semiconductor device comprising:
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a driver circuit in a driver circuit portion over an insulating surface and pixels in a pixel portion over the insulating surface; the driver circuit comprising; a first gate electrode layer over the insulating surface; a gate insulating layer over the first gate electrode layer; a first oxide semiconductor layer over the first gate electrode layer; a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer; and an oxide insulating layer over the first source electrode layer and the first drain electrode layer, wherein the oxide insulating layer is in contact with the first oxide semiconductor layer; and one of the pixels comprising; a second gate electrode layer over the insulating surface; the gate insulating layer over the second gate electrode layer; a second source electrode layer and a second drain electrode layer over the gate insulating layer; a second oxide semiconductor layer over the second gate electrode layer over the second source electrode layer and the second drain electrode layer; a first conductive layer over the second oxide semiconductor layer; and the oxide insulating layer over the second oxide semiconductor layer and the first conductive layer, wherein the oxide insulating layer is in contact with the second oxide semiconductor layer, wherein the driver circuit is arranged around the pixel portion, and wherein each of the second gate electrode layer, the gate insulating layer, the second source electrode layer, the second drain electrode layer, and the second oxide semiconductor layer has a light-transmitting property. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device comprising:
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a first transistor in a driver circuit, the first transistor comprising; a first oxide semiconductor layer; and a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer; a second transistor in a pixel, the second transistor comprising; a second source electrode layer and a second drain electrode layer; and a second oxide semiconductor layer over the second source electrode layer and the second drain electrode layer, and an oxide insulating layer over the first transistor and the second transistor, wherein the driver circuit is arranged around the pixel, and wherein the oxide insulating layer is in contact with the first oxide semiconductor layer and in contact with the second oxide semiconductor layer. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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a first transistor in a driver circuit, the first transistor comprising; a first oxide semiconductor layer; and a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer; a second transistor in a pixel, the second transistor comprising; a second source electrode layer and a second drain electrode layer; and a second oxide semiconductor layer over the second source electrode layer and the second drain electrode layer, wherein the driver circuit is arranged around the pixel portion, and wherein each of the second source electrode layer, the second drain electrode layer, and the second oxide semiconductor layer has a light-transmitting property. - View Dependent Claims (20, 21)
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Specification