Semiconductor light emitting device and fabrication method thereof

• US 8,742,429 B2
• Filed: 07/25/2006
• Issued: 06/03/2014
• Est. Priority Date: 07/25/2005
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Choi, Jin Sik
• Primary Examiner(s): WOLDEGEORGIS, ERMIAS T
• Application Number:
  US11/995,447
• Publication Number:
  US 20080217638A1
• Time in Patent Office: 2,870 Days
• Field of Search: 438/46, 438/42, 438/43, 438/47, 438/44, 438/29, 257/95, 257/98, 257/190, 257/E33.005, 257/E33.006, 257/E33.007, 257/E33.011, 257/E33.064, 257/E33.074, 257/E33.065
• US Class Current: 257/79
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/642 characterized by the shape

Abstract

A semiconductor light emitting device includes a first semiconductor layer having a bottom surface with uneven patterns, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer, a second electrode formed on the second semiconductor layer, and a first electrode formed under the first semiconductor layer.

Claims

1. A method for fabricating a semiconductor light emitting device, the method comprising:

forming a buffer layer on a substrate;

forming a first GaN based semiconductor layer on the buffer layer;

forming an active layer on a first surface of the first GaN based semiconductor layer;

forming a second GaN based semiconductor layer on the active layer;

removing the substrate;

forming uneven patterns at a second surface of the first GaN based semiconductor layer, the second surface being opposite the first surface of the first GaN based semiconductor layer; and

forming a first electrode with uneven patterns corresponding to the uneven patterns at the first GaN based semiconductor layer, and forming a second electrode on the second GaN based semiconductor layer such that current is provided to the semiconductor light emitting device including the first GaN based semiconductor layer, the active layer, and the second GaN based semiconductor layer through the first electrode and the second electrode,

wherein the first electrode is a single layer and includes a top surface having a shape corresponding to the uneven patterns at the first GaN based semiconductor layer and a bottom surface being the outermost surface of the semiconductor light emitting device,

wherein the uneven patterns at the first GaN based semiconductor layer directly contact the top surface of the first electrode,

wherein a light emitting structure including the first GaN based semiconductor layer, the active layer, and the second GaN based semiconductor layer generates light,

wherein the light emitting structure directly contacts the first electrode,

wherein the first GaN based semiconductor layer only includes GaN based semiconductor materials,

wherein the uneven patterns at the second surface of the first GaN based semiconductor layer are directly formed in the first GaN based semiconductor layer,

wherein the first GaN based semiconductor layer is an n-type semiconductor layer, and the second GaN based semiconductor layer is a p-type semiconductor layer,

wherein the uneven patterns of the first GaN based semiconductor layer are formed at different intervals,

wherein at least the first electrode is formed over the entire second surface of the first GaN based semiconductor layer, or at least the second electrode is formed over the entire surface of the second GaN based semiconductor layer,

wherein removing the substrate causes the buffer layer to be the bottom-most layer, and

wherein an entire surface of the first electrode contacts the first GaN based semiconductor layer.

2. The method according to claim 1, wherein the removing of the substrate comprises separating and removing the substrate using a laser lift-off method.

3. The method according to claim 2, wherein the laser lift-off method uses an eximer laser.

4. The method according to claim 1, wherein the forming of the uneven patterns in the first GaN based semiconductor layer comprises:

forming a photoresist layer under the buffer layer and patterning the photoresist layer;

performing etching on the patterned photoresist layer to form the uneven patterns at the second surface of the first GaN based semiconductor layer; and

removing the photoresist layer.

5. The method according to claim 1, further comprising, after the removing of the substrate, removing the buffer layer to expose the first GaN based semiconductor layer.

6. The method according to claim 5, wherein the removing of the buffer layer comprises removing the buffer layer using one of chemical mechanical polishing and etching.

7. The method according to claim 1, further comprising, after the removing of the substrate, etching the buffer layer and the first GaN based semiconductor layer to form uneven patterns under the first GaN based semiconductor layer, wherein the buffer layer is formed on a convex portion of the uneven patterns of the first GaN based semiconductor layer.

8. The method according to claim 1, further comprising forming the uneven patterns across the entire extent of the second surface of the first GaN based semiconductor layer.

9. The method according to claim 1, further comprising forming the uneven patterns after removing the substrate.

10. The method according to claim 1, further comprising forming each of the uneven patterns in the first GaN based semiconductor layer and the first electrode with projections and recesses, a height of the projections of one uneven pattern being equal to a depth of the recesses in the other uneven pattern.

11. A method for fabricating a semiconductor light emitting device, the method comprising:

forming a buffer layer on a substrate;

forming a first GaN based semiconductor layer on the buffer layer;

forming an active layer on the first GaN based semiconductor layer;

forming a second GaN based semiconductor layer on the active layer;

removing the substrate;

removing the buffer layer to expose the first GaN based semiconductor layer;

forming an uneven pattern at a surface of the first GaN based semiconductor layer, the uneven pattern being a predetermined pattern; and

forming a first electrode as a single layer with an uneven pattern corresponding to the uneven pattern at the first GaN based semiconductor layer, and forming a second electrode on the second GaN based semiconductor layer such that current is provided to the semiconductor light emitting device including the first GaN based semiconductor layer, the active layer, and the second GaN based semiconductor layer through the first electrode and the second electrode, wherein the first electrode includes a top surface having a shape corresponding to the uneven patterns at the first GaN based semiconductor layer and a bottom surface being the outermost surface of the semiconductor light emitting device, wherein the uneven patterns at the first GaN based semiconductor layer directly contact the top surface of the first electrode,

wherein a light emitting structure including the first GaN based semiconductor layer, the active layer, and the second GaN based semiconductor layer generates light,

wherein the light emitting structure directly contacts the first electrode,

wherein the first GaN based semiconductor layer only includes GaN based semiconductor materials,

wherein the uneven patterns at the first GaN based semiconductor layer are directly formed in the first GaN based semiconductor layer,

wherein the first electrode is formed as the single layer over the entire surface of the first GaN based semiconductor layer,

wherein the first GaN based semiconductor layer is an n-type semiconductor layer, and the second GaN based semiconductor layer is a p type semiconductor layer,

wherein the uneven pattern of the first GaN based semiconductor layer is formed at regular intervals,

wherein the uneven pattern is continuously formed at the surface of the first GaN based semiconductor layer,

wherein removing the substrate causes the buffer layer to be the bottom-most layer, and

wherein an entire surface of the first electrode contacts the first GaN based semiconductor layer.

12. The method according to claim 11, further comprising forming each of the uneven patterns in the first GaN based semiconductor layer and the first electrode with projections and recesses, a height of the projections of one uneven pattern being equal to a depth of the recesses in the other uneven pattern.

13. A method for fabricating a semiconductor light emitting device, the method comprising:

forming a buffer layer on a substrate;

forming a first GaN based semiconductor layer on the buffer layer;

forming an active layer on a first surface of the first GaN based semiconductor layer;

forming a second GaN based semiconductor layer on the active layer;

removing the substrate;

forming uneven patterns at a second surface of the first GaN based semiconductor layer, the second surface being opposite the first surface of the first GaN based semiconductor layer; and

forming a first electrode with uneven patterns corresponding to the uneven patterns at the first GaN based semiconductor layer,

wherein the first electrode includes a top surface having a shape corresponding to the uneven patterns at the first GaN based semiconductor layer and a bottom surface being the outermost surface of the semiconductor light emitting device,

wherein the uneven patterns at the first GaN based semiconductor layer directly contact the top surface of the first electrode,

wherein a light emitting structure including the first GaN based semiconductor layer, the active layer, and the second GaN based semiconductor layer generates light,

wherein the light emitting structure directly contacts the first electrode,

wherein the first GaN based semiconductor layer only includes GaN based semiconductor materials,

wherein the uneven patterns at the second surface of the first GaN based semiconductor layer are directly formed in the first GaN based semiconductor layer,

wherein the first GaN based semiconductor layer is an n-type semiconductor layer, and the second GaN based semiconductor lager is a p-type semiconductor lager,

wherein removing the substrate causes the buffer layer to be the bottom-most layer, and

wherein the uneven patterns of the first GaN based semiconductor layer are formed at different intervals.