Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same

• US 8,742,434 B2
• Filed: 06/27/2012
• Issued: 06/03/2014
• Est. Priority Date: 07/16/2003
• Status: Active Grant

• Current Assignee: Signify Holding B.V. (Signify N.V.)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Nagai, Hideo
• Primary Examiner(s): Pham, Long
• Application Number:
  US13/535,079
• Publication Number:
  US 20120292646A1
• Time in Patent Office: 706 Days
• Field of Search: 257/88, 257/95, 257/E27.121
• US Class Current: 257/88
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/16 Fillings or auxiliary members in containers or encapsulations, e.g. centering rings H01L23/42, H01L23/552 take precedence
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate

Abstract

The present invention aims to provide a semiconductor light emitting device that may be firmly attached to a substrate with maintaining excellent light emitting efficiency, and a manufacturing method of the same, and a lighting apparatus and a display apparatus using the same.

In order to achieve the above object, the semiconductor light emitting device according to the present invention includes a luminous layer, a light transmission layer disposed over a main surface of the luminous layer, and having depressions on a surface facing away from the luminous layer, and a transmission membrane disposed on the light transmission layer so as to follow contours of the depressions, and light from the luminous layer is irradiated so as to pass through the light transmission layer and the transmission membrane.

Claims

1. A semiconductor light-emitting device including a light-transmission substrate and a plurality of light-emitting elements disposed on one main surface of the light-transmission substrate, wherein

each of the plurality of light-emitting elements constitutes a diode structure, and has a p-electrode and an n-electrode,

the plurality of light-emitting elements are disposed on the main surface of the light-transmission substrate in a matrix so that neighboring light-emitting elements are separated from one another by separation grooves,

the separation grooves are covered with an insulating layer,

the p-electrode of one of the plurality of light-emitting elements is connected to the n-electrode of another one of the plurality of light-emitting elements that is next to the one of the plurality of light-emitting elements by a bridge wiring formed on the insulating layer, so that the plurality of light-emitting elements are electrically connected in series,

the p-electrode at one edge of the plurality of light-emitting elements connected in series is electrically connected to an anode electrode, and the n-electrode at the other edge of the plurality of light-emitting elements connected in series is electrically connected to a cathode electrode,

the light-transmission substrate has depressions on the other main surface opposite to the main surface on which the plurality of light-emitting elements are disposed.

2. The semiconductor light-emitting device of claim 1, wherein each of the separation grooves is as deep as to reach the light-transmission substrate.

3. The semiconductor light-emitting device of claim 1, wherein a high-resistant layer is inserted between the light-transmission substrate and each of the plurality of light-emitting elements, the high-resistant layer having higher resistance than the light-transmission substrate.

4. The semiconductor light-emitting device of claim 3, wherein

each of the separation grooves has been formed so that the high-resistant layer is not removed.

5. The semiconductor light-emitting device of claim 1, wherein

the depressions are covered with a light-transmission membrane whose upper surface is flat.

6. The semiconductor light-emitting device of claim 5, wherein

the light-transmission membrane contains phosphor material that is excited by light irradiated from each of the plurality of light-emitting elements.

7. A module including a mounting substrate and a semiconductor light-emitting device mounted on one main surface of the mounting substrate, wherein

the semiconductor light-emitting device is the semiconductor light-emitting device of claim 1.

8. The module of claim 7, wherein

a wiring layer is disposed over the main surface of the mounting substrate,

the wiring layer is patterned to a cathode pad, an anode pad and an island pad,

the cathode pad is connected to the cathode electrode of the semiconductor light-emitting device,

the anode pad is connected to the anode electrode of the semiconductor light-emitting device, and

the island pad is connected to the p-electrode of the one of the plurality of light-emitting elements and the n-electrode of the other one of the plurality of light-emitting elements that is next to the one of the plurality of light-emitting elements.

11. The semiconductor light-emitting device of claim 1, wherein

the anode electrode and the cathode electrode are disposed on respective corners of the light-transmission substrate.

9. A module comprising:

a mounting substrate; and

a semiconductor light-emitting device mounted on one main surface of the mounting substrate, the semiconductor light-emitting device including a light-transmission substrate and a plurality of light-emitting elements disposed on one main surface of the light-transmission substrate, wherein

each of the plurality of light-emitting elements constitutes a diode structure, and has a p-electrode and an n-electrode,

the plurality of light-emitting elements are disposed on the main surface of the light-transmission substrate in a matrix so that neighboring light-emitting elements are separated from one another by separation grooves,

the separation grooves are covered with an insulating layer,

the p-electrode of one of the plurality of light-emitting elements is connected to the n-electrode of another one of the plurality of light-emitting elements that is next to the one of the plurality of light-emitting elements by a bridge wiring formed on the insulating layer, so that the plurality of light-emitting elements are electrically connected in series,

the p-electrode at one edge of the plurality of light-emitting elements connected in series is electrically connected to an anode electrode, and the n-electrode at the other edge of the plurality of light-emitting elements connected in series is electrically connected to a cathode electrode, and wherein

a wiring layer is disposed over the main surface of the mounting substrate,

the wiring layer is patterned to a cathode pad, an anode pad and an island pad,

the cathode pad is connected to the cathode electrode of the semiconductor light-emitting device,

the anode pad is connected to the anode electrode of the semiconductor light-emitting device, and

the island pad is connected to the p-electrode of the one of the plurality of light-emitting elements and the n-electrode of the other one of the plurality of light-emitting elements that is next to the one of the plurality of light-emitting elements.

10. The module of claim 9, wherein

the anode electrode and the cathode electrode are disposed on respective corners of the light-transmission substrate.