Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same

• US 8,742,438 B2
• Filed: 12/11/2012
• Issued: 06/03/2014
• Est. Priority Date: 08/01/2002
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Kususe, Takeshi, Sakamoto, Takahiko
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): PATTON, PAUL E
• Application Number:
  US13/711,444
• Publication Number:
  US 20130193467A1
• Time in Patent Office: 539 Days
• Field of Search: 257/90, 257/91, 257/94, 257/95, 257/96, 257/97, 257/98, 257/81, 257/99, 257/88, 257/79, 362/612, 362/545, 362/800, 438/22, 438/26, 438/28, 438/29, 438 33- 40, 438/42, 438/43, 438 45- 47
• US Class Current: 257/90
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/45169 Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48139 with an intermediate bond, e.g. continuous wire daisy chain
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 27/156 : two-dimensional arrays
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01021 : Scandium [Sc]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01038 : Strontium [Sr]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01044 : Ruthenium [Ru]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01056 : Barium [Ba]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01059 : Praseodymium [Pr]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01063 : Europium [Eu]
• CPC Class Codes: H01L 2924/01065 : Terbium [Tb]
• CPC Class Codes: H01L 2924/01066 : Dysprosium [Dy]
• CPC Class Codes: H01L 2924/01067 : Holmium [Ho]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/0107 : Ytterbium [Yb]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01076 : Osmium [Os]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/10336 : Aluminium gallium arsenide [AlGaAs]
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/20751 : larger or equal to 10 microns less than 20 microns
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns
• CPC Class Codes: H01L 2924/20753 : larger or equal to 30 microns less than 40 microns
• CPC Class Codes: H01L 2924/20754 : larger or equal to 40 microns less than 50 microns
• CPC Class Codes: H01L 2924/20755 : larger or equal to 50 microns less than 60 microns
• CPC Class Codes: H01L 2924/20756 : larger or equal to 60 microns less than 70 microns
• CPC Class Codes: H01L 2924/20757 : larger or equal to 70 microns less than 80 microns
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 33/08 : with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 : with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/385 : the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/60 : Reflective elements
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.

Claims

1. A nitride semiconductor light-emitting element comprising:

a structured portion which is capable of emitting light and includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer;

a p-electrode being light-transmissive in contact with the p-type semiconductor layer;

an n-electrode in contact with the n-type semiconductor layer; and

an insulating film being light-transmissive,

wherein the p- and n-electrodes are disposed on a electrodes forming surface side of the structured portion and a reflection metal layer covers the p-electrode on the electrodes forming surface side of the layered where an insulating film is interposed between the p-electrode and the reflection.

2. The nitride semiconductor light-emitting element according to claim 1, wherein the reflection metal layer covers a side surface of the structured portion with an insulating layer therebetween.

3. The nitride semiconductor light-emitting element according to claim 2, wherein the reflection metal layer serves as a connecting electrode for connecting the p-electrode of the p-type semiconductor layers of the structured portions.

4. The nitride semiconductor light-emitting element according to claim 3, wherein the nitride semiconductor light-emitting element has a plurality of the structured portion.

5. The nitride semiconductor light-emitting element according to claim 4, further comprising a n-connecting electrode in connection with the respective n-electrodes which is disposed on the structured portions and is separated from each other.

6. The nitride semiconductor light-emitting element according to claim 5, further comprising a support member bonded to the structured portion on the electrodes forming side with an adhesion member so as to expose a light-emitting surface of n-type semiconductor layer which is disposed on a side opposing to the electrodes forming surface side and emit light therefrom.

7. The nitride semiconductor light-emitting element according to claim 6, further comprising a phosphor member including a phosphor layer disposed on the light-emitting surface of the n-type semiconductor layer, wherein the phosphor layer absorbs at least part of first light emitted from the structured portion and emits second light having a different wavelength from that of first light.

8. The nitride semiconductor light-emitting element according to claim 4, wherein the insulating film comprises a dielectric multilayer film.

9. The nitride semiconductor light-emitting element according to claim 8, further comprising a n-connecting electrode in connection with the respective n-electrodes which is disposed on the structured portions and is separated from each other.

10. The nitride semiconductor light-emitting element according to claim 8, wherein the reflection metal layer is extended to a surface of the n-type electrode and/or an n-connecting electrode in connection with the n-type electrode and the insulating layer interposed between the reflection metal layer and the n-electrode and/or the n-connecting electrode.

11. The nitride semiconductor light-emitting element according to claim 8, wherein the n-electrode and/or an n-connecting electrode in connection with the n-electrode covers the p-type semiconductor layer disposed on the electrodes forming side.

12. The nitride semiconductor light-emitting element according to claim 11, wherein the nitride semiconductor light-emitting element is mounted on a mounting member in connection with the n- and p-electrodes and a light-emitting surface of n-type semiconductor layer is exposed on a side opposing to the electrodes forming surface side so as to emit light therefrom.

13. The nitride semiconductor light-emitting element according to claim 12, further comprising a phosphor member including a phosphor layer disposed on the light-emitting surface of the n-type semiconductor layer, wherein the phosphor layer absorbs at least part of first light emitted from the structured portion and emits second light having a different wavelength from that of first light.

14. The nitride semiconductor light-emitting element according to claim 11, further comprising a support member bonded to the structured portion on the electrodes forming side with an adhesion member so as to expose a light-emitting surface of n-type semiconductor layer which is disposed on a side opposing to the electrodes forming surface side and emit light therefrom.

15. A nitride semiconductor light-emitting element comprising:

a structured portion which is capable of emitting light and includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer;

a p-electrode in contact with the p-type semiconductor layer;

an n-electrode in contact with the n-type semiconductor layer;

an insulating film; and

a support member,

wherein the p- and n-electrodes are disposed on a electrodes forming surface side of the structured portion, the n-electrode and/or an n-connecting electrode in connection with the n-electrode covers the p-type semiconductor layer disposed on the electrodes forming side and the support member is bonded to the structured portion on the electrodes forming side with an adhesion member so as to expose a light-emitting surface of n-type semiconductor layer which is disposed on a side opposing to the electrodes forming surface side and emit light therefrom.

16. The nitride semiconductor light-emitting element according to claim 15, wherein the n-connecting electrode connects to the respective n-electrodes separated from each other.

17. The nitride semiconductor light-emitting element according to claim 16, wherein the light-emitting surface has protrusions or recesses.

18. The nitride semiconductor light-emitting element according to claim 16, wherein the p-electrode is light-reflective metal which includes at least one element selected group consisted of Al, Ag and Rh.

19. The nitride semiconductor light-emitting element according to claim 18, further comprising a phosphor member including a phosphor layer disposed on the light-emitting surface of the n-type semiconductor layer, wherein the phosphor layer absorbs at least part of first light emitted from the structured portion and emits second light having a different wavelength from that of first light.

22. The nitride semiconductor light-emitting element according to claim 15, wherein the n-connecting electrode connects to the respective n-electrodes separated from each other.

20. A nitride semiconductor light-emitting element comprising:

a structured portion which is capable of emitting light and includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer;

a p-electrode in contact with the p-type semiconductor layer;

an n-electrode in contact with the n-type semiconductor layer;

an insulating film; and

a mounting member, wherein the p- and n-electrodes are disposed on a electrodes forming surface side of the structured portion, the nitride semiconductor light-emitting element is mounted on the mounting member in connection with the n- and p-electrodes and a light-emitting surface of n-type semiconductor layer is exposed on a side opposing to the electrodes forming surface side so as to emit light therefrom.

21. The nitride semiconductor light-emitting element according to claim 20, wherein the n-electrode and/or an n-connecting electrode in connection with the n-electrode covers the p-type semiconductor layer disposed on the electrodes forming side.

23. The nitride semiconductor light-emitting element according to claim 21, further comprising a phosphor member including a phosphor layer disposed on the light-emitting surface of the n-type semiconductor layer, wherein the phosphor layer absorbs at least part of first light emitted from the structured portion and emits second light having a different wavelength from that of first light.