Method of wire bonding over active area of a semiconductor circuit

• US 8,742,580 B2
• Filed: 02/25/2007
• Issued: 06/03/2014
• Est. Priority Date: 10/15/2002
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Megit Acquisition Corp.
• Inventors: Lee, Jin-Yuan, Chen, Ying-Chih, Lin, Mou-Shiung
• Primary Examiner(s): Vu, David
• Application Number:
  US11/678,600
• Publication Number:
  US 20070164441A1
• Time in Patent Office: 2,655 Days
• Field of Search: 257/751, 257/753, 257/E21.508, 438/623, 438/653, 438/654
• US Class Current: 257/751
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05073 Single internal layer
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05187 Ceramics, e.g. crystalline carbides, nitrides or oxides glass ceramics H01L2224/05188
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05556 in side view
• CPC Class Codes: H01L 2224/05558 conformal layer on a patterned surface
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/4807 of bonding interfaces, e.g. interlocking features
• CPC Class Codes: H01L 2224/48453 of the interface with the bonding area
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/48599 Principal constituent of the connecting portion of the wire connector being Gold (Au)
• CPC Class Codes: H01L 2224/48624 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48644 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48647 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/854 : with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
• CPC Class Codes: H01L 2224/85424 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/85444 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/85447 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor

Abstract

A method and structure are provided to enable wire bond connections over active and/or passive devices and/or low-k dielectrics, formed on an Integrated Circuit die. A semiconductor substrate having active and/or passive devices is provided, with interconnect metallization formed over the active and/or passive devices. A passivation layer formed over the interconnect metallization is provided, wherein openings are formed in the passivation layer to an upper metal layer of the interconnect metallization. Compliant metal bond pads are formed over the passivation layer, wherein the compliant metal bond pads are connected through the openings to the upper metal layer, and wherein the compliant metal bond pads are formed substantially over the active and/or passive devices. The compliant metal bond pads may be formed of a composite metal structure.

Claims

1. A circuit component comprising:

a semiconductor substrate;

a dielectric layer having a dielectric constant less than 3.0 coupled to said semiconductor substrate;

a first conductive pad coupled to said dielectric layer;

a passivation layer coupled to said dielectric layer, wherein an opening in said passivation layer exposes a contact point of said first conductive pad, wherein said passivation layer comprises a nitride;

a polymer layer on said passivation layer and coupled to said dielectric layer, wherein said polymer layer has a thickness greater than 2 micrometers;

a second conductive pad coupled to said dielectric layer, wherein said second conductive pad is coupled to said contact point through said opening, in which said polymer layer and said passivation layer are selectively disposed to expose contact portions of said first conductive pad, wherein said second conductive pad is coupled to said first conductive pad through said contact portions, wherein said second conductive pad comprises a glue layer, a copper-containing seed layer coupled to said glue layer, an electroplated copper layer having a thickness greater than 1 micrometer on said copper-containing seed layer, a nickel layer having a thickness greater than 0.5 micrometers on said electroplated copper layer, and a wirebondable conductive layer coupled to said nickel layer; and

a wirebond bonded to said second conductive pad, wherein a contact between said wirebond and said second conductive pad is coupled to at least a portion of said dielectric layer.

2. The circuit component of claim 1, wherein said thickness of said nickel layer is between 1 and 5 micrometers.

3. The circuit component of claim 1, wherein said wirebondable conductive layer comprises a gold layer.

4. The circuit component of claim 1, wherein said wirebondable conductive layer has a thickness greater than 100 Angstroms.

5. The circuit component of claim 1, wherein said contact is further coupled to said polymer layer.

6. The circuit component of claim 1, wherein said glue layer comprises a titanium-containing layer.

7. The circuit component of claim 1, wherein said glue layer comprises a chromium-containing layer.

8. The circuit component of claim 1, wherein said nitride comprises silicon nitride.

9. The circuit component of claim 1, wherein said dielectric layer comprises a Si_wC_xO_yH_z composition.

10. The circuit component of claim 1, wherein said passivation layer further comprises an oxide under said nitride.

11. The circuit component of claim 1, wherein said contact is further coupled to said contact point.

12. A circuit component comprising:

a semiconductor substrate;

a dielectric layer having a dielectric constant less than 3.0 coupled to said semiconductor substrate;

a passivation layer coupled to said dielectric layer, wherein said passivation layer comprises a nitride;

a polymer layer on said passivation layer and coupled to said dielectric layer, wherein said polymer layer has a thickness greater than 2 micrometers;

a conductive pad on said polymer layer, coupled to said passivation layer and coupled to said dielectric layer, said polymer layer and said passivation layer being selectively disposed to expose contact portions of said dielectric layer, wherein said conductive pad is coupled to said dielectric layer through said contact portions, wherein said conductive pad comprises a glue layer, a copper-containing seed layer coupled to said glue layer, an electroplated copper layer having a thickness greater than 1 micrometer on said copper-containing seed layer, a nickel layer having a thickness greater than 0.5 micrometers on said electroplated copper layer, and a gold layer having a thickness greater than 100 Angstroms coupled to said nickel layer; and

a wirebond bonded to said conductive pad, wherein a contact between said wirebond and said conductive pad is coupled to said polymer layer, coupled to said passivation layer and coupled to at least a portion of said dielectric layer.

13. The circuit component of claim 12, wherein said thickness of said nickel layer is between 1 and 5 micrometers.

14. The circuit component of claim 12, wherein said thickness of said gold layer is greater than 0.1 micrometers.

15. The circuit component of claim 12, wherein said dielectric layer comprises polyarylene.

16. The circuit component of claim 12, wherein said dielectric layer comprises polybenzoxazole.

17. The circuit component of claim 12, wherein said glue layer comprises a titanium-containing layer.

18. The circuit component of claim 12, wherein said glue layer comprises a chromium-containing layer.

19. The circuit component of claim 12, wherein said nitride comprises silicon nitride.

20. The circuit component of claim 12, wherein said dielectric layer comprises a Si_wC_xO_yH_z composition.

21. The circuit component of claim 12, wherein said passivation layer further comprises an oxide under said nitride.

22. A circuit component comprising:

a semiconductor substrate;

an active device in or coupled to said semiconductor substrate;

a first dielectric layer coupled to said semiconductor substrate;

a first conductive interconnect coupled to said first dielectric layer;

a second dielectric layer coupled to said first conductive interconnect and coupled to said first dielectric layer;

a second conductive interconnect on said second dielectric layer;

a passivation layer coupled to said second dielectric layer, wherein said passivation layer comprises a nitride;

a conductive pad coupled to said passivation layer, said passivation layer being selectively disposed to expose contact portions of said second conductive interconnect, wherein said conductive pad is coupled to said second conductive interconnect through said contact portions, wherein said conductive pad comprises a copper layer having a thickness greater than 1 micrometer; and

a wirebond bonded to said conductive pad, wherein a contact between said wirebond and said conductive pad is coupled to said active device, coupled to said second conductive interconnect, coupled to a first sidewall of said second conductive interconnect and coupled to a second sidewall of said second conductive interconnect, wherein said first sidewall is opposite to said second sidewall.

23. The circuit component of claim 22, wherein said conductive pad further comprises a nickel layer on said copper layer.

24. The circuit component of claim 22, wherein said conductive pad further comprises a nickel layer having a thickness between 1 and 5 micrometers on said copper layer.

25. The circuit component of claim 22, wherein said conductive pad further comprises a gold layer coupled to said copper layer.

26. A circuit component comprising:

a semiconductor substrate;

an active device in or coupled to said semiconductor substrate;

a first dielectric layer coupled to said semiconductor substrate;

a first conductive interconnect coupled to said first dielectric layer;

a second dielectric layer coupled to said first conductive interconnect and coupled to said first dielectric layer;

a second conductive interconnect on said second dielectric layer;

a third conductive interconnect on said second dielectric layer;

a passivation layer coupled to said second dielectric layer and on said third conductive interconnect, wherein an opening in said passivation layer is coupled to a contact point of said second conductive interconnect, and said contact point is at a bottom of said opening, wherein said passivation layer comprises a nitride;

a conductive pad coupled to said contact point through said opening, said passivation layer being selectively disposed to expose contact portions of said third conductive interconnect, wherein said conductive pad is coupled to said third conductive interconnect through said contact portions, wherein said conductive pad comprises a copper layer having a thickness greater than 1 micrometer; and

a wirebond bonded to said conductive pad, wherein a contact between said wirebond and said conductive pad is coupled to said active device, coupled to said third conductive interconnect, coupled to a first sidewall of said third conductive interconnect and coupled to a second sidewall of said third conductive interconnect, wherein said first sidewall is opposite to said second sidewall.

27. The circuit component of claim 26, wherein said conductive pad further comprises a nickel layer on said copper layer.

28. The circuit component of claim 26, wherein said conductive pad further comprises a nickel layer having a thickness between 1 and 5 micrometers on said copper layer.

29. The circuit component of claim 26, wherein said conductive pad further comprises a gold layer coupled to said copper layer.